Reimann, Tobias;
Wang, Huamin; Petzoldt, Jürgen; Chen, Zhiming; Scherf, Marko
A novel topology to reduce the power losses in synchronous rectifiers. - In: Proceedings, (2001), S. DS3.1-3
A novel topology to reduce the power losses in synchronous rectifiers. - In: Proceedings, (2001), S. DS3.1-3
Rafoth, Axel; Richter, K.; Schluß, Andreas; Petzoldt, Jürgen
Switched line side current-source-inverter. - In: Proceedings, (2001), S. DS1.1-20
Switched line side current-source-inverter. - In: Proceedings, (2001), S. DS1.1-20
Geng, Li; Chen, Zhi-ming; Krümmer, Robert; Reimann, Tobias; Petzoldt, Jürgen
A precise model for simulation of temperature distribution in power modules. - In: Ban dao ti xue bao, ISSN 0253-4177, Bd. 22 (2001), 5, S. 548-553
A precise model for simulation of temperature distribution in power modules. - In: Ban dao ti xue bao, ISSN 0253-4177, Bd. 22 (2001), 5, S. 548-553
Rybin, Peter V.; Kulikov, Dmitri V.; Trushin, Yuri V.; Petzoldt, Jürgen
Al+ and N+ implantation in silicon carbide: a role of point defect clusters in defect evolution. - In: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 12 - 17 June 2000, St. Petersburg, Russia, (2001), S. 257-263
Im Titel ist "+" hochgestellt
Al+ and N+ implantation in silicon carbide: a role of point defect clusters in defect evolution. - In: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 12 - 17 June 2000, St. Petersburg, Russia, (2001), S. 257-263
Im Titel ist "+" hochgestellt
Petzoldt, Jürgen; Reimann, Tobias; Lorenz, Leo; Zverev, Ilia
Influence of device and circuit parameters on the switching losses of an ultra fast CoolMOS/SiC-diode device-set: simulation and measurement. - In: Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, (2001), S. 187-190
Influence of device and circuit parameters on the switching losses of an ultra fast CoolMOS/SiC-diode device-set: simulation and measurement. - In: Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, (2001), S. 187-190
Petzoldt, Jürgen; Reimann, Tobias; Scherf, Marko; Zverev, Ilia
Power losses of an ultra-fast CoolMOS/SiC-diode device-set in PFC-applications: simulation and measurement. - In: Power electronics, intelligent motion, power quality, (2001), insges. 6 S.
Power losses of an ultra-fast CoolMOS/SiC-diode device-set in PFC-applications: simulation and measurement. - In: Power electronics, intelligent motion, power quality, (2001), insges. 6 S.
Reimann, Tobias;
Krümmer, Robert; Petzoldt, Jürgen
Investigation of current balance and power loss distribution of parallel connected IGBTs during active voltage clamping. - In: Official proceedings of the Forty-First International Power Conversion Conference, (2000), S. 257-262
Investigation of current balance and power loss distribution of parallel connected IGBTs during active voltage clamping. - In: Official proceedings of the Forty-First International Power Conversion Conference, (2000), S. 257-262
Rybin, Peter V.; Kulikov, Dmitri V.; Trushin, Yurii V.; Petzoldt, Jürgen; Yankov, Rossen A.
Influence of internal stress fields due to point defect clusters on interstitial diffusion in SiC under irradiation. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 301-307
Influence of internal stress fields due to point defect clusters on interstitial diffusion in SiC under irradiation. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 301-307
Reimann, Tobias; Krümmer, Robert; Franke, Uwe; Petzoldt, Jürgen; Lorenz, Leo
Real time calculation of the chip temperature of power modules in PWM inverters using a 16bit microcontroller. - In: The 12th International Symposium on Power Semiconductor Devices and ICs, (2000), S. 127-130
Real time calculation of the chip temperature of power modules in PWM inverters using a 16bit microcontroller. - In: The 12th International Symposium on Power Semiconductor Devices and ICs, (2000), S. 127-130
Petzoldt, Jürgen;
Trends bei Frequenz- und Leistungsgrenzen technologischer Stromquellen. - In: Workshop Reihe Elektroprozesstechnik - Induktionserwärmung, (2000), insges. 9 S.
Trends bei Frequenz- und Leistungsgrenzen technologischer Stromquellen. - In: Workshop Reihe Elektroprozesstechnik - Induktionserwärmung, (2000), insges. 9 S.