Wang, Chunyu; Lebedev, Vadim; Cimalla, Volker; Kups, Thomas; Tonisch, Katja; Ambacher, Oliver
Structural studies of single crystalline In2O3 films epitaxially grown on InN(0001). - In: Applied physics letters, ISSN 1077-3118, Bd. 90 (2007), 22, S. 221902, insges. 3 S.
http://dx.doi.org/10.1063/1.2743907
Structural studies of single crystalline In2O3 films epitaxially grown on InN(0001). - In: Applied physics letters, ISSN 1077-3118, Bd. 90 (2007), 22, S. 221902, insges. 3 S.
http://dx.doi.org/10.1063/1.2743907
Romanus, Henry; Schadewald, Jens; Cimalla, Volker; Niebelschütz, Merten; Machleidt, Torsten; Franke, Karl-Heinz; Spieß, Lothar; Ambacher, Oliver
Preparation of defined structures on very thin foils for characterization of AFM probes. - In: Microelectronic engineering, Bd. 84 (2007), 3, S. 528-531
http://dx.doi.org/10.1016/j.mee.2006.10.077
Preparation of defined structures on very thin foils for characterization of AFM probes. - In: Microelectronic engineering, Bd. 84 (2007), 3, S. 528-531
http://dx.doi.org/10.1016/j.mee.2006.10.077
Romanus, Henry; Schadewald, Jens; Cimalla, Volker; Niebelschütz, Merten; Machleidt, Torsten; Franke, Karl-Heinz; Spieß, Lothar; Ambacher, Oliver
Markers prepared by focus ion beam technique for nanopositioning procedures. - In: Microelectronic engineering, Bd. 84 (2007), 3, S. 524-527
http://dx.doi.org/10.1016/j.mee.2006.10.076
Markers prepared by focus ion beam technique for nanopositioning procedures. - In: Microelectronic engineering, Bd. 84 (2007), 3, S. 524-527
http://dx.doi.org/10.1016/j.mee.2006.10.076
Reháková, Andrea; Tengeri, David; Hotový, Ivan; Lalinský, Tibor; Reháček, Vlastimil; Spieß, Lothar; Romanus, Henry; Ha&bovko;s&bovko;cík, Stefan
Preparation and characterization of microhotplate for gas sensors. - In: International Conference on Advanced Semiconductor Devices and Microsystems, 2006, (2006), insges. 4 S.
https://doi.org/10.1109/ASDAM.2006.331208
Preparation and characterization of microhotplate for gas sensors. - In: International Conference on Advanced Semiconductor Devices and Microsystems, 2006, (2006), insges. 4 S.
https://doi.org/10.1109/ASDAM.2006.331208
Hotovy, Ivan; Lalinsky, Tibor; Rehacek, Vlastimil; Spieß, Lothar; Gubisch, Maik; Hascik, Stefan; Rehakova, Andrea
Fabrication and characterization of a microheater on GaAs for gas sensors. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 9 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13379
Fabrication and characterization of a microheater on GaAs for gas sensors. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 9 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13379
Rehacek, Vlastimil; Hotovy, Ivan; Spieß, Lothar; Gubisch, Maik
Determination of trace heavy metals by anodic stripping voltammetry at mercury-plated silicon microelectrodes. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 7 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13380
Determination of trace heavy metals by anodic stripping voltammetry at mercury-plated silicon microelectrodes. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 7 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13380
Fischer, Michael; Stubenrauch, Mike; Kups, Thomas; Romanus, Henry; Morales, Francisco M.; Ecke, Gernot; Hoffmann, Martin; Knedlik, Christian; Ambacher, Oliver; Pezoldt, Jörg
Self organization and properties of Black Silicon. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 9 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13467
Self organization and properties of Black Silicon. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 9 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13467
Schadewald, Uwe; Halbedel, Bernd; Romanus, Henry; Hülsenberg, Dagmar
New results of the crystallization behaviour of hexagonal barium ferrites from a glassy matrix. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 8 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13512
New results of the crystallization behaviour of hexagonal barium ferrites from a glassy matrix. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 8 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13512
Flickyngerova, Sona; Novotny, Ivan; Tvarozek, Vladimir; Nigrovicova, Martina; Satka, Alexander; Kovac, Jaroslav; Sutta, Pavel; Breternitz, Volkmar; Spieß, Lothar; Knedlik, Christian
Zinc oxide - unique material for micro-/nanotechnology. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 11 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13548
Zinc oxide - unique material for micro-/nanotechnology. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 11 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13548
Wilke, Marcus; Analytis, Minas; Breternitz, Volkmar; Knedlik, Christian; Teichert, Gerd
Recalibration-free measurement of the compound layer thickness of nitrocarburized samples by glow discharge optical emission spectrometry (GD-OES). - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 4 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13598
Recalibration-free measurement of the compound layer thickness of nitrocarburized samples by glow discharge optical emission spectrometry (GD-OES). - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 4 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13598