Simulation of heat transfer and propagation velocity for different heat loss conditions for guided propagation fronts in reactive multilayer foils. - In: Advanced engineering materials, ISSN 1527-2648, Bd. 0 (2024), 0, 2400523, S. 1-9
Engineering self-propagating reactions in reactive material systems requires an understanding of critical ignition and propagation conditions. These conditions are governed by the material properties of the reactive materials responsible for net heat generation, as well as by external environmental conditions that primarily determine net heat loss. In this study, it is aimed to utilize a numerical model to investigate the critical conditions for reaction propagation based solely on the heat-transfer equation, enabling thorough examination with significantly low computational effort. Comparing simulations with experiments demonstrates a high level of agreement in predicting reaction propagation. Additionally, this numerical model provides valuable information regarding heat distribution in substrate materials.
https://doi.org/10.1002/adem.202400523
Patterned liquid micro rails for the transport of micrometer sized chips. - In: Advanced Materials Technologies, ISSN 2365-709X, Bd. n/a (2024), n/a, 2400235, S. 1-11
Transport and alignment of microscopic chips are important steps in microelectronics component integration with common approaches being pick-and-place, microfluidics, parallel transfer and self-assembly. An alternate transport approach of microscopic chips is proposed using patterned liquid micro rails as chaperones. The surface free energy and interfacial free energy minimization of all constituents enable the creation of stable pathways. This allows for chip-attachment to rails, while the liquid layer lubricates chip-sliding. Monorails, digital monorails, and digital birails are investigated for chip movement behavior. Chip position and speed can be controlled using liquid flow in closed chambers. Speeds from 10 to 400 mm s−1 are achieved with translation distances as long as 50 mm. It is discovered that chips can selectively cross rail discontinuities of up to 500 µm, allowing for chip position control through a stop-and-go motion. A programmable liquid rails-based chip conveyor system is demonstrated by transporting diodes to receptor sites where they undergo self-assembly.
https://doi.org/10.1002/admt.202400235
Defects contributing to hysteresis in few-layer and thin-film MoS2 memristive devices. - In: Materials, ISSN 1996-1944, Bd. 17 (2024), 6, 1350, S. 1-14
Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS2 FETs. The dominant sources of hysteresis reported include charge trapping at the channel-dielectric interface and the adsorption/desorption of molecules. However, in MoS2 FETs with different channel thicknesses, the specific nature and density of defects contributing to hysteresis remain an intriguing aspect requiring further investigation. This study delves into memristive devices with back-gate modulated channel layers based on CVD-deposited flake-based and thin-film-based MoS2 FETs, with a few-layer (FL) and thin-film (TF) channel thickness. Analysis of current-voltage (I−V) and conductance-frequency (Gp/ω−f) measurements led to the conclusion that the elevated hysteresis observed in TF MoS2 devices, as opposed to FL devices, stems from a substantial contribution from intrinsic defects within the channel volume, surpassing that of interface defects. This study underscores the significance of considering both intrinsic defects within the bulk and the interface defects of the channel when analyzing hysteresis in MoS2 FETs, particularly in TF FETs. The selection between FL and TF MoS2 devices depends on the requirements for memristive applications, considering factors such as hysteresis tolerance and scaling capabilities.
https://doi.org/10.3390/ma17061350
A novel method for preparation of Al-Ni reactive coatings by incorporation of Ni nanoparticles into an Al matrix fabricated by electrodeposition in AlCl3:1-eethyl-3-methylimidazolium chloride (1.5:1) ionic liquid containing Ni nanoparticles. - In: Advanced engineering materials, ISSN 1527-2648, Bd. 0 (2024), 0, 2302217, S. 1-17
Al/Ni reactive coatings are fabricated via electrochemical deposition (ECD) at different applied voltages for reactive bonding application. AlCl3:1-ethyl-3-methylimidazolium chloride ([EMIm]Cl) (1.5:1) ionic liquid electrolyte is used as source of Al, whereas Ni is in the bath and incorporated into final coatings as nanoparticles (NPs). Scanning electron microscopy and Auger electron spectroscopy reveal a homogeneous Ni particle dispersion, as well as a high amount of particle incorporation into the Al matrix. A maximum of 37 wt% (22 at%) of Ni is detected via atomic absorption spectroscopy in the Al/Ni coating deposited at −0.1 V from an electrolyte containing 20 g L−1 of Ni NPs. Previous literature show that for bonding application an ideal concentration is around 50 at% of Ni and 50 at% Al. However, this is achieved using high vacuum, time-consuming processes, and costly techniques like evaporation and magnetron sputtering. The ECD used in this work represents a more cost-efficient approach which is not reported up to date for the aforementioned application. The reactivity of the coatings is confirmed by Differential scanning calorimetry. Herein, an exothermic reaction is detected upon the mixing of Al and Ni occurring at high temperatures.
https://doi.org/10.1002/adem.202302217
Fundamentals and applications of gas phase electrodeposition. - Ilmenau : Universitätsbibliothek, 2024. - 1 Online-Ressource (147 Seiten)
Technische Universität Ilmenau, Dissertation 2024
In dieser Arbeit werden Grundlagen und Anwendungen der Gasphasen Elektrodeposition erarbeitet. Der Begriff steht für ein Zusammenspiel von Aerosolphysik und konventioneller Abscheidungstechnologie. Das aus einer Funkenentladung erzeugte Material wird durch einen Plasmastrahl direkt zu Punkten auf einem Substrat transportiert, wo sich das Material lokal oder in Mikrofilmen abscheidet. In dieser Arbeit wurden drei entscheidende theoretische Aspekte (i-iii) und drei praktische Aspekte (iv-vi) herausgearbeitet. (i) Die beiden Schlüsselparameter Funkenentladungsleistung und Trägergasfluss beeinflussen den von den geladenen Spezies getragenen elektrischen Strom, die erzeugte Masse/Größe der Nanopartikel und die resultierende Mikro-/Nanostrukturmorphologie. Langmuir-Sonden-Messungen zeigen mindestens zwei Transportzonen – eine vom Gasfluss dominierte und eine vom elektrischen Feld dominierte Zone. Die Gasströmung ist der Hauptfaktor, nicht nur für die Partikelgeschwindigkeit in der Transportzone, sondern auch für die Verteilung des elektrischen Potenzials und des elektrischen Feldes im Reaktor. In der Nähe des Substrats bildet sich ein elektrischer Feldgradient aus. Der Transport wechselt von der Gasströmung zum E-Feld. Die Komponente des elektrischen Feldes zeigt zur Oberfläche hin. (ii) Der elektrische Strom und die gravimetrische Analyse zeigen, dass die Stickstoff Ionen im Vergleich zu den erzeugten Metallpartikeln deutlich in der Überzahl sind. In Anbetracht der Mikro-/Nanostrukturmorphologie erweist sich die Leistung der Entladung als der wichtigste Parameter. Eine niedrige Funkenleistung in Verbindung mit einem geringen Gasfluss führt zu dendritischen Partikeln. Im Gegensatz dazu führt eine höhere Funkenleistung in Verbindung mit einem höheren Gasfluss zu kompakten Schichten. Dieses zweidimensionale Parameterfeld ermöglicht eine maßgeschneiderte Schichtmorphologie und Abscheiderate. (iii) Bei konstantem Gasdurchsatz führt ein kleinerer Reaktordurchmesser zu einem turbulenteren Strömungsverhalten. Dieses Verhalten ist unabhängig vom Gaseinlass, der die Partikelkonzentration im Plasmastrahl beeinflusst. Ein statistisches Modell führt zu einem besseren Verständnis der Gasphasen Elektrodeposition. Zusätzlich zur üblichen Standarddiffusion treten in eine bestimmte Richtung auch lange super-diffusive Flüge der erzeugten Teilchen auf, wenn ein zusätzliches elektrisches Feld vorhanden ist. Die gewonnenen theoretischen Erkenntnisse halfen bei der Gasphasen Elektrodeposition von (iv) Mikrofilmen, (v) lokalisierten selbstausrichtenden lateralen Metall-Nanobrücken und (vi) lokalisierten selbstausrichtenden vertikalen Leiterbahnen.
https://doi.org/10.22032/dbt.59621
Electrical lengths and phase constants of stretchable coplanar transmission lines at GHz frequencies. - In: Flexible and printed electronics, ISSN 2058-8585, Bd. 9 (2024), 1, 015005, S. 1-12
Elastic, bendable and stretchable electronics establish a new and promising area of multi-physics engineering for a variety of applications, e.g. on wearables or in complex-shaped machine parts. While the area of metamorphic electronics has been investigated comprehensively, the behavior at radio frequencies (RFs), especially in the GHz range, is much less well studied. The mechanical deformation of the soft substrates, for instance, due to stretching, changes the geometrical dimensions and the electrical properties of RF transmission lines. This effect could be desirable in some cases, e.g. for smart devices with shape-dependent transmission or radiation characteristics, or undesirable in other cases, e.g. in feed and distribution networks due to the variable electrical lengths and thus phase variations. This contribution describes the results of a systematic study of the broadband RF properties of coplanar transmission lines on Ecoflex® substrates, based on numerical simulations and experimental data. Two types of stretchable transmission line structures were studied: Meander- and circular ring-segmented lines. Modeling and simulation were performed combining a 2D circuit simulation software with electromagnetic full-wave simulations. The experimental part of the work included the fabrication of metamorphic substrates metallized with thin copper layers and systematic measurements of the electrical lengths and phase constants of coplanar waveguides in the frequency range from 1 to 5 GHz based on vector network analysis for different stretching levels. With the given substrate technology, we succeeded in demonstrating stretchability up to a level of 21%, while the theoretical limit is expected at 57%. The meander- and circular-shaped line structures revealed markedly different sensitivities to the stretching level, which was lower for circular structures compared to the meander structures by approximately a factor of three.
https://doi.org/10.1088/2058-8585/ad1efd
Modelling reaction transfer velocities in disconnected compact heterogeneous multilayer reactive material systems. - In: MRS advances, ISSN 2059-8521, Bd. 0 (2024), 0, S. 1-6
The tuning of the self-propagating reaction is studied theoretically by introducing a non-reactive material between two reactive material elements. For the study, the Ni/Al bilayer system was chosen. The Ni/Al elements were placed on a silicon wafer covered with a 1-µm-thick silicon dioxide. The spaces between the multilayer reactive material elements were filled with different non-reactive materials covering a wide range of thermal properties. On top of this heterogeneous layer, a 1-µm-thick sealing layer was placed consisting of the filler material. The carried out two-dimensional simulations demonstrated that embedding material allows to scale the ignition transfer time and the heat propagation velocity. For example, for a transfer length of 1 µm, the ignition time can be tuned from nano- to microseconds. Consequently, in contrast to previous results embedding materials allow scaling the properties of the self-propagating reaction in heterogeneous reactive material systems.
https://doi.org/10.1557/s43580-024-00822-3
Controlling reaction transfer between Al/Ni reactive multilayer elements on substrates. - In: MRS advances, ISSN 2059-8521, Bd. 0 (2024), 0, S. 1-6
Reactive multilayers produce exothermic reaction with definite velocity and maximum temperature after ignition, which are the fundamental properties of the reactive multilayer systems. The generated heat with certain velocity makes it widely used in joining, bonding in the packaging, thermal batteries and many more applications. In this work, a distinct approach for achieving a reaction transfer between the reactive multilayers and different materials is demonstrated which can affect the generated temperature and velocity from the self-propagating properties of the reaction. For these intensions, we fabricated the Al/Ni reactive elements with certain separations between elements which allow to observe the reaction front transfer and emitted temperature in the reaction chain. The created separation between reactive elements are periodical and ordered systems with different thermal conductive properties. The temperature and definite velocity were measured by time-resolved pyrometer and high-speed camera measurements. SEM analysis showed the characteristics of the reaction transfer between reactive multilayer elements. It is predicted that: (I) The reaction front stops at a space with critical length; (II) Reducing heat loss through the substrate supports reaction front propagation through spaces; (III) Thermal property design of the spaces between the reactive elements enables property modification of the self-propagating reaction.
https://doi.org/10.1557/s43580-024-00804-5
A universal design strategy based on NiPS3 nanosheets towards efficient photothermal conversion and solar desalination. - In: Advanced functional materials, ISSN 1616-3028, Bd. 34 (2024), 8, 2310942, S. 1-11
2D nanomaterials are proposed as promising photothermal materials for interfacial photothermal water evaporation. However, low evaporation efficiency, the use of hazardous hydrofluoric solution, and poor stability severely limit their practical applications. Here, a mixed solvent exfoliation surface deposition (MSESD) strategy for the preparation of NiPS3 nanosheets and NiPS3/polyvinyl alcohol (PVA) converter is successfully developed. The converter is obtained by drop-casting the NiPS3/PVA nanosheets onto a sponge. The PVA is mainly deposited on the edge of NiPS3 nanosheets, which not only improves the stability of NiPS3 nanosheets, but also adheres to the sponge to prepare a 3D photothermal converter, which shows an evaporation rate of 1.48 kg m−2 h−1 and the average photothermal conversion efficiency (PTCE) of 93.5% under a light intensity of 1 kW m−2. The photothermal conversion mechanism reveals that the energy of absorbed photons in NiPS3 nanosheets can be effectively converted into heat through non-radiative photon transitions as well as multiple optical interactions. To the best of the knowledge, this is the first report on the application of 2D metal-phosphorus-chalcogen (MPChx) for solar desalination, which provides new insights and guidance for the development of high-performance 2D photothermal materials.
https://doi.org/10.1002/adfm.202310942
Exploring the surface oxidation and environmental instability of 2H-/1T’-MoTe2 using field emission based scanning probe lithography. - In: Advanced materials, ISSN 1521-4095, Bd. 36 (2024), 4, 2310887, S. 1-14
An unconventional approach for the resistless nanopatterning 2H- and 1T’-MoTe2 by means of scanning probe lithography is presented. A Fowler-Nordheim tunneling current of low energetic electrons (E = 30-60 eV) emitted from the tip of an atomic force microscopy (AFM) cantilever is utilized to induce a nanoscale oxidation on a MoTe2 nanosheet surface under ambient conditions. Due to the water solubility of the generated oxide, a direct pattern transfer into the MoTe2 surface can be achieved by a simple immersion of the sample in deionized water. The tip-grown oxide was characterized using Auger electron and Raman spectroscopy, revealing it consists of amorphous MoO3/MoOx as well as TeO2/TeOx. With the presented technology in combination with subsequent AFM imaging it was possible to demonstrate a strong anisotropic sensitivity of 1T’-/(Td)-MoTe2 to aqueous environments. We finally used the discussed approach to structure a nanoribbon field effect transistor out of a few-layer 2H-MoTe2 nanosheet. This article is protected by copyright. All rights reserved
https://doi.org/10.1002/adma.202310887
Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo. - In: AIP Advances, ISSN 2158-3226, Bd. 13 (2023), 9, 095224, S. 095224-1-095224-7
Hysteresis effects and their tuning with electric fields and light were studied in thin film molybdenum disulfide transistors fabricated from sulfurized molybdenum films. The influence of the back-gate voltage bias, voltage sweep range, illumination, and AlOx encapsulation on the hysteresis effect of the back-gated field effect transistors was studied and quantified. This study revealed the distinctive contribution of MoS2 surface, MoS2/SiO2 interface defects and their associated traps as primary sources of of hysteresis.
https://doi.org/10.1063/5.0165868
Electrodeposition of reactive aluminum-nickel coatings in an AlCl3:[EMIm]Cl ionic liquid containing nickel nanoparticles. - In: Journal of the Electrochemical Society, ISSN 1945-7111, Bd. 170 (2023), 7, 072504
The electrodeposition of aluminum-nickel coatings was performed by pulsed direct current in the ionic liquid (IL) 1.5:1 AlCl3:EMIm]Cl containing nickel nanoparticles (Ni NPs), for reactive dispersion coating application. Several electrochemical and characterization techniques were used to shed more light on the mechanism of Ni particle incorporation into the Al matrix. Thus, particle incorporation at the early stage of the deposition would mainly take place via particle adsorption at the substrate. However, as the thickness of the coating increases, it seems that the main mechanism for particle incorporation is via the reduction of ions adsorbed at the particles surface. Although a considerable high incorporation of Ni NPs has been achieved from the IL containing the highest concentration of Ni NPs (i.e. ∼33 wt% from a 20 g/L of Ni NPs bath), a high concentration of NPs in the IL resulted having a negative effect in terms of quality of the coatings, due to solidification of the electrolyte in a poorly conductive compound. Moreover, almost equivalent amounts of Ni and Al (Ni ∼45 wt.%and Al ∼44 wt.%) have been detected in some areas of the coatings. Such a layer composition would be desired for the targeted application.
https://doi.org/10.1149/1945-7111/ace382
Ruthenium and rhodium vertical interconnect formation using gas phase electrodeposition. - In: 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM) (IITC/MAM), (2023), insges. 3 S.
This paper presents localized gas phase electrodeposition of ruthenium (Ru) and rhodium (Rh) species into vertical interconnects. A spark discharge generates gas ions and charged species of the desired metal, which are transported by a gas flow and form a plasma jet. Prior lateral nano-bridge growth is further developed and enables the localized metal species deposition into vertical interconnect openings. This approach is additive and saves rare materials during processing. The process allows precise adjustment of the diameter, airgap size, and top finishing bump of the vertical interconnect.
https://doi.org/10.1109/IITC/MAM57687.2023.10154806
Novel gas phase route toward patterned deposition of sputter-free Pt/Al nanofoils. - In: Advanced Materials Technologies, ISSN 2365-709X, Bd. 8 (2023), 18, 2300448, S. 1-8
This article reports a new approach toward fabrication and directed assembly of nanoparticulate reactive system (Nanofoils) on patterned substrates. Different from current state-of-the-art, gas phase electrodeposition uses nanoparticles instead of atoms to form densely packed multilayered thin films at room temperature-pressure. On ignition, the multilayer system undergoes an exothermic self-propagating reaction. The numerous contact points between two metallic nanoparticulate layers aid in high heat release. Sub-10-nm Platinum (Pt) and Aluminum (Al) particles are synthesized through cathode erosion of metal electrodes in a flow of pure nitrogen gas (spark ablation). Pt/Al bilayer stacks with total thickness of 3–8 µm undergo self-propagating reaction with a 10.3 mm s−1 wavefront velocity on local ignition. The reaction wavefront is captured using high speed videography. Calorimetry studies reveal two exothermic peaks suggesting Pt/Al alloy formation. The peak at 135 ˚C has a higher calorific value of 150 mW g−1 while the peak at 400 ˚C has a 12 mW g−1 exothermic peak. X-ray diffraction study shows reaction-products are cubic Al2Pt with small quantities of orthorhombic Al6Pt and orthorhombic AlPt2. Electron microscopy studies help draw a correlation between film morphology, bimetallic interface, nanoparticle oxidation, and self-propagating reaction kinetics that is significant in broadening our understanding towards nanoparticulate reactive systems.
https://doi.org/10.1002/admt.202300448
Evaluation of hysteresis response in achiral edges of graphene nanoribbons on semi-insulating SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 1089 (2023), S. 15-22
Hysteresis response of epitaxially grown graphene nanoribbons devices on semi-insulating 4H-SiC in the armchair and zigzag directions is evaluated and studied. The influence of the orientation of fabrication and dimensions of graphene nanoribbons on the hysteresis effect reveals the metallic and semiconducting nature graphene nanoribbons. The hysteresis response of armchair based graphene nanoribbon side gate and top gated devices implies the influence of gate field electric strength and the contribution of surface traps, adsorbents, and initial defects on graphene as the primary sources of hysteresis. Additionally, passivation with AlOx and top gate modulation decreased the hysteresis and improved the current-voltage characteristics.
https://doi.org/10.4028/p-i2s1cm
Three-dimensional MoS2 nanosheet structures: CVD synthesis, characterization, and electrical properties. - In: Crystals, ISSN 2073-4352, Bd. 13 (2023), 3, 448, S. 1-14
The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS2 nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N2 gas flow during the deposition process. The distinctive signals of MoS2 were revealed via Raman spectroscopy study, and the substantial frequency difference in the characteristic signals supported the bulk nature of the synthesized material. Additionally, XRD measurements sustained the material’s crystallinity and its 2H-MoS2 nature. The FIB cross-sectional analysis provided information on the origin and evolution of the vertical MoS2 structures and their growth mechanisms. The strain energy produced by the compression between MoS2 islands is assumed to primarily drive the formation of vertical MoS2 nanosheets. In addition, vertical MoS2 structures that emerge from micro fissures (cracks) on individual MoS2 islands were observed and examined. For the evaluation of electrical properties, field-effect transistor structures were fabricated on the synthesized material employing standard semiconductor technology. The lateral back-gated field-effect transistors fabricated on the synthesized material showed an n-type behavior with field-effect mobility of 1.46 cm2 V^-1 s^-1 and an estimated carrier concentration of 4.5 × 10^12 cm^-2. Furthermore, the effects of a back-gate voltage bias and channel dimensions on the hysteresis effect of FET devices were investigated and quantified.
https://doi.org/10.3390/cryst13030448
Phase formation of cubic silicon carbide from reactive silicon-carbon multilayers. - In: MRS advances, ISSN 2059-8521, Bd. 8 (2023), 9, S. 494-498
Silicon carbide layers were fabricated using self-propagating high-temperature synthesis of binary silicon-carbon based reactive multilayers. The silicon and carbon bilayers were fabricated with two different bilayer thicknesses. They are deposited by magnetron sputtering in an alternating layer system with a total thickness of 1 μm. The entire system is annealed by rapid thermal annealing at different temperatures ranging from 500 to 1100 ˚C. From XRD analysis we could find that the formation of the silicon carbide phase was initiated from 700 ˚C. With increasing bilayer thickness the silicon carbide phase formation was partially suppressed by the silicon recrystallization due to resulting lower carbon diffusion into silicon. The transformation process proceeds in a four-step process: densification/recrystallization, interdiffusion, nucleation and transformation. From this, it was noted that when compared to low bilayer thickness samples, the formation of the silicon carbide phase is delayed with increasing bilayer thickness and needs higher reaction initiation temperatures.
https://doi.org/10.1557/s43580-023-00531-3
Energy-efficient operation conditions of MoS2-based memristors. - In: Physica status solidi, ISSN 1862-6319, Bd. 220 (2023), 13, 2200893, S. 1-12
Sufficient energy consumption for conventional information processing makes it necessary to look for new computational methods. One of the possible solutions to this problem is neuromorphic computations using memristive devices. Memristors based on molybdenum disulfide (MoS2) are a promising way to provide a sizeable amount of hysteresis at low energy costs. Herein, different configurations of MoS2 memristors as well as the mechanisms involved in hysteresis formation are shown. Bottom gated configuration is beneficial in terms of hysteresis area and energy efficiency. The impact of device channel dimensions on the hysteresis area and energy consumption is discussed. Different operation conditions with triangular, rectangular, sinusoidal, and sawtooth drain-to-source pulses are simulated, and rectangular pulses demonstrate the highest energy efficiency. The study shows the potential to realize low-power neuromorphic systems using MoS2 memristive devices.
https://doi.org/10.1002/pssa.202200893
Influence of environment on self-propagating reactions in Al/Ni multilayer foils. - In: MRS advances, ISSN 2059-8521, Bd. 8 (2023), 9, S. 477-483
Reactive aluminum-nickel multilayer system shows exothermic energetic materials which act as a heat source for packaging and bonding of microsystems. The main challenge is controlling the self-propagation reaction velocity and temperature generated by thermal management through different thermal conductive substrate materials. The current work investigates the heat distribution of Al/Ni multilayer foils from different thermal conductive substrates which act as heat sink materials during the self-propagating reaction. A two-dimensional numerical model was developed to study thermal conductive heat loss and substrate thermal properties on the self-propagating reaction in Al/Ni multilayer foils. The self-propagating reaction was introduced on the surface of the foils by an electrical spark. Here we investigate the minimum critical thickness of Al/Ni multilayer foils which shows the self-propagation reaction on different substrates and verified from the two-dimensional numerical model. The outcomes of this investigation will facilitate the integration of Al/Ni multilayer foils on different substrates as intrinsic heat sources for different applications of micro/nanodevices.
https://doi.org/10.1557/s43580-023-00574-6
Self-aligning metallic vertical interconnect access formation through microlensing gas phase electrodeposition controlling airgap and morphology. - In: Advanced electronic materials, ISSN 2199-160X, Bd. 9 (2023), 1, 2200838, S. 1-8
This publication reports self-aligning metallic via microlensing gas phase electrodeposition formation. Key operational parameters to fabricate vertical ruthenium and rhodium interconnects (via) with a diameter of 100 nm are discussed. Moreover, airgaps are implemented during the deposition process, which utilizes spark discharge to generate a flux of charged nanoparticles. An inert gas flow transports the nanoparticles through a reactor chamber close to the target substrate. The substrate uses a pre-patterned resist with openings to a silicon/silicon dioxide/metal stack to direct the deposition of the nanoparticles to form localized self-aligning vertical interconnects. Five process parameters were identified, which impact the morphology and conductance of the resulting interconnects: spark discharge power, gas flow rate, microlens via dimensions, substrate surface potential, and in situ flash lamp power. This parameter set enables a controlled adjustment of the via interconnect morphology and its minimum feature size. Gas flow rate in combination with spark discharge power contribute significantly to the morphology of the interconnect. Spark power and microlens via dimensions have the largest influence on the surface potential of the insulating resist cover, which enables a localized microlensing gas phase electrodeposition of a via with a controlled ratio between conducting diameter and airgap.
https://doi.org/10.1002/aelm.202200838
Large single domain iron oxide nanoparticles as thermal markers for lateral flow assays. - In: Biomedical engineering, ISSN 1862-278X, Bd. 67 (2022), S. 63
https://doi.org/10.1515/bmt-2022-2001
Hysteresis associated with intrinsic-oxide traps in gate-tunable tetrahedral CVD-MoS2 memristor. - In: IEEE 22nd International Conference on Nanotechnology (NANO), (2022), S. 527-530
We introduce back gated memristor based on CVD-grown 30-40 nm thick MoS2 channel. The device demonstrates bipolar behaviour and the measurements are consistent with the simulations performed within the intrinsic-oxide traps model. This confirms the theory that the source of hysteresis in thin-film MoS2 memristors is charge trapping on MoS2/SiO2 interface and the grain boundaries. The impact of back gate voltage bias, voltage sweep range and channel area on memristive effect was studied and quantified using hysteresis area. Hysteresis in bipolar memristors can be tuned by back gate voltage, which makes these devices promising for neuromorphic computing.
https://doi.org/10.1109/NANO54668.2022.9928717
Formation and characterization of three-dimensional tetrahedral MoS2 thin films by chemical vapor deposition. - In: Crystal growth & design, ISSN 1528-7505, Bd. 22 (2022), 9, S. 5229-5238
A method to synthesize the three-dimensional arrangement of bulk tetrahedral MoS2 thin films by solid source chemical vapor deposition of MoO3 and S is presented. The developed synthesizing recipe uses a temperature ramping with a constant N2 gas flow in the deposition process to grow tetrahedral MoS2 thin film layers. The study analyses the time-dependent growth morphologies, and the results are combined and presented in a growth model. A combination of optical, electron, atomic force microscopy, Raman spectroscopy, and X-ray diffraction are used to study the morphological and structural features of the tetrahedral MoS2 thin layers. The grown MoS2 is c-axis oriented 2H-MoS2. Additionally, the synthesized material is further used to fabricate back-gated field-effect transistors (FETs). The fabricated FET devices on the tetrahedral MoS2 show on/off current ratios of 10^6 and mobility up to ∼56 cm^2 V^-1 s^-1 with an estimated carrier concentration of 4 × 10^16 cm-3 for VGS = 0 V.
https://doi.org/10.1021/acs.cgd.2c00333
The angle dependent ΔE effect in TiN/AlN/Ni micro cantilevers. - In: Sensors and actuators, ISSN 1873-3069, Bd. 345 (2022), 113784, S. 1-12
In this work, magnetoelectric MEMS sensors based on a TiN/AlN/Ni laminate are investigated for the first time in regards of the anisotropic elastic properties when using hard magnetic Nickel as magnetostrictive layer. The implications of crystalline, uniaxial and shape anisotropy are analysed arising from the anisotropic ΔE effect in differently oriented cantilevers with 25 µm length and 15˚ spacing. The ΔE effect is derived analytically to consider the angular dependency of the different anisotropies within the sensors. In the measured frequency spectra complex profiles are observable consisting of contributions from neighbouring structures which are connected by a common electrode. The crosstalk effect is strongly depending on the cantilever orientation and reflects the anisotropic mechanical properties of the material stack. The intensity of the crosstalk effect is increasing for shortened cantilevers and narrowing distance between structures. The ΔE effect is investigated based on cantilevers of different angular spacing and of a single cantilever that is rotated in the magnetic field. The derived peak sensitivities are reaching values of 1.15 and 1.31T-1. The angular dependency of the sensitivity is found to be approximately constant for differently oriented cantilevers. In contrast, for a singly rotated cantilever an angular dependency of the 4th order is observed.
https://doi.org/10.1016/j.sna.2022.113784
Silicon carbide formation in reactive silicon-carbon multilayers. - In: Materials science forum, ISSN 1662-9752, Bd. 1062 (2022), S. 44-48
An alternative low thermal budget silicon carbide syntheses route is presented. The method is based on self-propagating high-temperature synthesis of binary silicon-carbon-based reactive multilayers. With this technique, it is possible to obtain cubic polycrystalline silicon carbide at relatively low annealing temperatures by a solid state reaction. The reaction starts above 600 ˚C. The transformation process proceeds in a four-step process. The reaction enthalpy was determined to be (-70 ± 4) kJ/mol.
https://doi.org/10.4028/p-7u1v90
Silicon carbide - graphene nano-gratings on 4H and 6H semi-insulating SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 1062 (2022), S. 170-174
A technical methodology of fabrication of hierarchically scaled multitude graphene nanogratings with varying pitches ranging from the micrometer down to sub 40 nm scale combined with sub 10 nm step heights on 4H and 6H semi-insulating SiC for length scale measurements is proposed. The nanogratings were fabricated using electron-beam lithography combined with dry etching of graphene, incorporating a standard semiconductor processing technology. A scientific evaluation of critical dimension, etching step heights, and surface characterization of graphene nanograting on both polytypes were compared and evaluated.
https://doi.org/10.4028/p-wn4zya
Designing MoS2 channel properties for analog memory in neuromorphic applications. - In: Journal of vacuum science & technology, ISSN 2166-2754, Bd. 40 (2022), 3, S. 030602-1-030602-5
In this paper, we introduce analog nonvolatile random access memory cells for neuromorphic computing. The analog memory cell MoS2 channel is designed based on the simulation model including Fowler-Nordheim tunneling through a charge-trapping stack, trapping process, and transfer characteristics to describe a full write/read circle. 2D channel materials provide scaling to higher densities as well as preeminent modulation of the conductance by the accumulated space charge from the oxide trapping layer. In this paper, the main parameters affecting the distribution of memory states and their total number are considered. The dependence of memory state distribution on channel doping concentration and the number of layers is given. In addition, how the nonlinearity of memory state distribution can be overcome by variation of operating conditions and by applying pulse width modulation to the bottom gate voltage is also shown.
https://doi.org/10.1116/6.0001815
Size dependent properties of reactive materials. - In: Inorganics, ISSN 2304-6740, Bd. 10 (2022), 4, 56, S. 1-19
The nature of the self-sustained reaction of reactive materials is dependent on the physical, thermal, and mechanical properties of the reacting materials. These properties behave differently at the nano scale. Low-dimensional nanomaterials have various unusual size dependent transport properties. In this review, we summarize the theoretical and experimental reports on the size effect on melting temperature, heat capacity, reaction enthalpy, and surface energy of the materials at nano scale because nanomaterials possess a significant change in large specific surface area and surface effect than the bulk materials. According to the theoretical analysis of size dependent thermodynamic properties, such as melting temperature, cohesive energy, thermal conductivity and specific heat capacity of metallic nanoparticles and ultra-thin layers varies linearly with the reciprocal of the critical dimension. The result of this scaling relation on the material properties can affect the self-sustained reaction behavior in reactive materials. Resultant, powder compacts show lower reaction propagation velocities than bilayer system, if the particle size of the reactants and the void density is decreased an increase of the reaction propagation velocity due to an enhanced heat transfer in reactive materials can be achieved. Standard theories describing the properties of reactive material systems do not include size effects.
https://doi.org/10.3390/inorganics10040056
Metal oxide semiconducting nanomaterials for air quality gas sensors: operating principles, performance, and synthesis techniques. - In: Microchimica acta, ISSN 1436-5073, Bd. 189 (2022), 5, 196, S. 1-22
To meet requirements in air quality monitoring, sensors are required that can measure the concentration of gaseous pollutants at concentrations down to the ppb and ppt levels, while at the same time they exhibiting high sensitivity, selectivity, and short response/recovery times. Among the different sensor types, those employing metal oxide semiconductors (MOSs) offer great promises as they can be manufactured in easy/inexpensive ways, and designed to measure the concentration of a wide range of target gases. MOS sensors rely on the adsorption of target gas molecules on the surface of the sensing material and the consequent capturing of electrons from the conduction band that in turn affects their conductivity. Despite their simplicity and ease of manufacturing, MOS gas sensors are restricted by high limits of detection (LOD; which are typically in the ppm range) as well as poor sensitivity and selectivity. LOD and sensitivity can in principle be addressed by nanostructuring the MOSs, thereby increasing their porosity and surface-to-volume ratio, whereas selectivity can be tailored through their chemical composition. In this paper we provide a critical review of the available techniques for nanostructuring MOSs using chemiresistive materials, and discuss how these can be used to attribute desired properties to the end gas sensors. We start by describing the operating principles of chemiresistive sensors, and key material properties that define their performance. The main part of the paper focuses on the available methods for synthesizing nanostructured MOSs for use in gas sensors. We close by addressing the current needs and provide perspectives for improving sensor performance in ways that can fulfill requirements for air quality monitoring.
https://doi.org/10.1007/s00604-022-05254-0
Electric bias-induced edge degradation of few-layer MoS2 devices. - In: Materials today, ISSN 2214-7853, Bd. 53 (2022), 2, S. 281-284
In this work, we experimentally investigate the effects of electric bias on the degradation of few-layer MoS2 back-gated field-effect transistors in ambient air. The devices were fabricated using mechanically exfoliated MoS2 flakes, which were transferred to a Si/SiO2 substrate by a PDMS-based transfer. We report an accelerated electric bias-induced degradation of the devices under investigation and used optical and scanning electron microscopy (SEM) to monitor changes of the morphology of the MoS2 channel. In particular, we found a linear dependency of the degradation on the electric field between the Ti/Au source and drain contacts. In addition, we identify four regions in which morphological changes occur, of which the edges of the MoS2 channel are most affected.
https://doi.org/10.1016/j.matpr.2021.05.298
Nanoscale surface morphology modulation of graphene - i-SiC heterostructures. - In: Materials today, ISSN 2214-7853, Bd. 53 (2022), 2, S. 289-292
A multitude gratings design consists of gratings with different pitches ranging from the micrometre down to sub 40 nm scale combined with sub 10 nm step heights modulating the surface morphology for length scale measurements is proposed. The surface morphology modulation was performed using electron beam lithography incorporating a standard semiconductor processing technology. The critical dimension, edge roughness, step heights and line morphology in dependence on the grating pitch is studied.
https://doi.org/10.1016/j.matpr.2021.06.427
Localized and programmable material transport and deposition by corona discharge. - Ilmenau : Universitätsbibliothek, 2022. - 1 Online-Ressource (xiii, 133, XXIX Seiten)
Technische Universität Ilmenau, Dissertation 2022
Der Transport von Materialien und Gütern bestimmt unseren Alltag. Materialtransport passiert in globalen Logistikunternehmen, in Fertigungslinien, in alltäglichen Situationen wie dem Einkaufen und selbst in unserem menschlichen Körper. Zu jedem Zeitpunkt werden Materialien von A nach B transportiert, ohne dass uns dies in vielen Situationen bewusst wird. Mit dem Unterschreiten von Größenordnungen im Mikro- und Nanometerbereich wird ein gezielter Materialtransport zu einer Herausforderung, da eine manuelle Manipulation nicht mehr möglich ist. Dennoch wäre es wünschenswert, wenn wir gezielt Material an einen gewünschten Ort transportieren und dort abscheiden könnten, denn diese Lokalisierung wird in vielen Anwendungsfeldern benötigt, um z.B. physikalische Eigenschaften auszunutzen oder chemische oder biologische Reaktionen auszulösen. Daher soll in dieser Arbeit eine Methode zum lokalisierten Materialtransport im Mikro- und Nanometerbereich vorgestellt werden. Diese Methode basiert auf elektrischen Kräften. Einfach ausgedrückt, laden wir ein beliebiges Material elektrisch auf und können es dann in einem elektrischen Feld manipulieren. Negativ geladenes Material wird von negativ geladenen Flächen abgestoßen und von positiv geladenen Flächen angezogen. So lässt sich ein gerichteter Materialtransport erzeugen. Das Material wird mithilfe einer negativen DC Corona-Entladung aufgeladen. Durch die Strukturierung von isolierenden Flächen auf leitfähigen Substraten lassen sich sogenannte elektrodynamische Trichter erzeugen, die das geladene Material zu den gewünschten Orten führen, es dort konzentrieren und abscheiden. Die Nutzung von elektrischen Kräften ermöglicht zudem eine Programmierbarkeit, da durch das Ändern der elektrischen Felder oder durch An- und Ausschalten von Elektroden die Position der Abscheidung, die Abscheideart oder die Abscheiderate geändert werden kann. Die Nutzung der Corona-Entladung ermöglicht eine hohe Freiheit bei der Materialwahl. Die Abscheidung von Metallen, Halbleitern, Isolatoren und biologischen Materialien in einem Größenbereich von Mikropartikeln bis hin zu einzelnen Molekülen wird gezeigt. Die Anwendungsgebiete der vorgestellten Methode sind vielfältig: Sie reichen von Luftüberwachung, Nanodrahtwachstum, Gassensorik bis hin zur Kristallzucht. Die experimentellen Ergebnisse werden mit elektrischen, optischen und materialspezifischen Analysen verifiziert. Darüber hinaus werden Simulationen durchgeführt, um die Art der Lokalisierung zu demonstrieren.
https://doi.org/10.22032/dbt.51508
Ferrimagnetic large single domain iron oxide nanoparticles for hyperthermia applications. - In: Nanomaterials, ISSN 2079-4991, Bd. 12 (2022), 3, 343, S. 1-12
This paper describes the preparation and obtained magnetic properties of large single domain iron oxide nanoparticles. Such ferrimagnetic particles are particularly interesting for diagnostic and therapeutic applications in medicine or (bio)technology. The particles were prepared by a modified oxidation method of non-magnetic precursors following the green rust synthesis and characterized regarding their structural and magnetic properties. For increasing preparation temperatures (5 to 85 ˚C), an increasing particle size in the range of 30 to 60 nm is observed. Magnetic measurements confirm a single domain ferrimagnetic behavior with a mean saturation magnetization of ca. 90 Am2/kg and a size-dependent coercivity in the range of 6 to 15 kA/m. The samples show a specific absorption rate (SAR) of up to 600 W/g, which is promising for magnetic hyperthermia application. For particle preparation temperatures above 45 ˚C, a non-magnetic impurity phase occurs besides the magnetic iron oxides that results in a reduced net saturation magnetization.
https://doi.org/10.3390/nano12030343
Influence of initial temperature and convective heat loss on the self-propagating reaction in Al/Ni multilayer foils. - In: Materials, ISSN 1996-1944, Bd. 14 (2021), 24, 7815, insges. 15 S.
A two-dimensional numerical model for self-propagating reactions in Al/Ni multilayer foils was developed. It was used to study thermal properties, convective heat loss, and the effect of initial temperature on the self-propagating reaction in Al/Ni multilayer foils. For model adjustments by experimental results, these Al/Ni multilayer foils were fabricated by the magnetron sputtering technique with a 1:1 atomic ratio. Heat of reaction of the fabricated foils was determined employing Differential Scanning Calorimetry (DSC). Self-propagating reaction was initiated by an electrical spark on the surface of the foils. The movement of the reaction front was recorded with a high-speed camera. Activation energy is fitted with these velocity data from the high-speed camera to adjust the numerical model. Calculated reaction front temperature of the self-propagating reaction was compared with the temperature obtained by time-resolved pyrometer measurements. X-ray diffraction results confirmed that all reactants reacted and formed a B2 NiAl phase. Finally, it is predicted that (1) increasing thermal conductivity of the final product increases the reaction front velocity; (2) effect of heat convection losses on reaction characteristics is insignificant, e.g., the foils can maintain their characteristics in water; and (3) with increasing initial temperature of the foils, the reaction front velocity and the reaction temperature increased.
https://doi.org/10.3390/ma14247815
Chemoheteroepitaxy of 3C-SiC(111) on Si(111): influence of predeposited Ge on structure and composition. - In: Physica status solidi, ISSN 1862-6319, Bd. 218 (2021), 24, 2100399, S. 1-10
Secondary ion mass spectroscopy, Fourier transformed infrared spectroscopy, ellipsometry, reflection high energy diffraction and transmission electron microscopy are used to gain inside into the effect of Ge on the formation of ultrathin 3C-SiC layers on Si(111) substrates. Accompanying the experimental investigations with simulations it is found that the ultrathin single crystalline 3C-SiC layer is formed on top of a gradient Si1-x-yGexCy buffer layer due to a complex alloying and alloy decomposition processes promoted by carbon and germanium interdiffusion and SiC nucleation. This approach allows tuning residual stress at very early growth stages as well as the interface properties of the 3C-SiC/Si heterostructure. Useful yields of secondary ions of Ge in Si matrix and Si dimer are estimated.
https://doi.org/10.1002/pssa.202100399
Photoluminescence kinetics of dark and bright excitons in atomically thin MoS2. - In: Physica status solidi, ISSN 1862-6270, Bd. 15 (2021), 10, 2100263, insges. 14 S.
The fine structure of the exciton spectrum, containing optically allowed (bright) and forbidden (dark) exciton states, determines the radiation efficiency in nanostructures. Time-resolved microphotoluminescence in MoS2 monolayers (MLs) and bilayers (BLs), both unstrained and compressively strained, in a wide temperature range (10-300 K), is studied to distinguish between exciton states optically allowed and forbidden, both in spin and in momentum, as well as to estimate their characteristic decay times and contributions to the total radiation intensity. The decay times are found to either increase or decrease with increasing temperature, indicating the lowest bright or lowest dark state, respectively. The results unambiguously show that, in an unstrained ML, the spin-allowed state is the lowest for a series of A excitons (1.9 eV), with the dark state being <2 meV higher, and that the splitting energy can increase several times at compression. In contrast, in the indirect exciton series in BLs (1.5 eV), the spin-forbidden state is the lowest, being about 3 meV below the bright one. The strong effect of strain on the exciton spectrum can explain the large scatter among the published data and must be taken into account to realize the desired optical properties of 2D MoS2.
https://doi.org/10.1002/pssr.202100263
Three-dimensional platinum nanoparticle-based bridges for ammonia gas sensing. - In: Scientific reports, ISSN 2045-2322, Bd. 11 (2021), 12551, S. 1-9
This study demonstrates the fabrication of self-aligning three-dimensional (3D) platinum bridges for ammonia gas sensing using gas-phase electrodeposition. This deposition scheme can guide charged nanoparticles to predetermined locations on a surface with sub-micrometer resolution. A shutter-free deposition is possible, preventing the use of additional steps for lift-off and improving material yield. This method uses a spark discharge-based platinum nanoparticle source in combination with sequentially biased surface electrodes and charged photoresist patterns on a glass substrate. In this way, the parallel growth of multiple sensing nodes, in this case 3D self-aligning nanoparticle-based bridges, is accomplished. An array containing 360 locally grown bridges made out of 5 nm platinum nanoparticles is fabricated. The high surface-to-volume ratio of the 3D bridge morphology enables fast response and room temperature operated sensing capabilities. The bridges are preconditioned for ˜ 24 h in nitrogen gas before being used for performance testing, ensuring drift-free sensor performance. In this study, platinum bridges are demonstrated to detect ammonia (NH3) with concentrations between 1400 and 100 ppm. The sensing mechanism, response times, cross-sensitivity, selectivity, and sensor stability are discussed. The device showed a sensor response of ˜ 4% at 100 ppm NH3 with a 70% response time of 8 min at room temperature.
https://doi.org/10.1038/s41598-021-91975-w
Efficient fabrication of MoS2 nanocomposites by water-assisted exfoliation for nonvolatile memories. - In: Green chemistry, ISSN 1463-9270, Bd. 23 (2021), 10, S. 3642-3648
Efficient and green exfoliation of bulk MoS2 into few-layered nanosheets in the semiconducting hexagonal phase (2H-phase) remains a great challenge. Here, we developed a new method, water-assisted exfoliation (WAE), for the scalable synthesis of carboxylated chitosan (CC)/2H-MoS2 nanocomposites. With facile hand grinding of the CC powder, bulk MoS2 and water followed by conventional liquid-phase exfoliation in water, this method can not only efficiently exfoliate the 2H-MoS2 nanosheets, but also produce two-dimensional (2D) CC/2H-MoS2 nanocomposites. Interestingly, the intercalated CC in MoS2 nanosheets increases the interlayer spacing of 2H-MoS2 to serve as good candidates for the semiconductor devices. 2D CC/2H-MoS2 nanocomposites show superior electronic rectification effects in nonvolatile write-once-read-many-times memory (WORM) behavior with an ON/OFF ratio over 103, which can be rationally controlled by the weight ratios of CC and MoS2. These findings by the WAE method would open tremendous potential opportunities to prepare commercially available semiconducting 2D nanocomposites for promising high-performance device applications.
https://doi.org/10.1039/D1GC00162K
Ultrafast formation of single phase B2 AlCoCrFeNi high entropy alloy films by reactive Ni/Al multilayers as heat source. - In: Materials and design, ISSN 1873-4197, Bd. 206 (2021), 109790, insges. 12 S.
High entropy alloy films of AlCoCrFeNi B2-ordered structure are formed during an ultrafast heating process by reactive Ni/Al multilayers. The self-propagating high-temperature reaction occurring in reactive Ni/Al multilayers after ignition represents an ultrafast heat source which is used for the transformation of a thin films Al/CoFe/CrNi multilayer structure into a single-phase high entropy alloy film. The materials design of the combined multilayers thus determines the phase formation. Conventional rapid thermal annealing transforms the multilayer into a film with multiple equilibrium phases. Ultrafast combustion synthesis produces films with ultrafine-grained single-phase B2-ordered compound alloy. The heating rates during the combustion synthesis are in the order of one million K/s, much higher than those of the rapid thermal annealing, which is about 7 K/s. The results are compared with differential scanning calorimetry experiments with heating rates ranging from about 100 K/s up to 25000 K/s. It is shown that the heating rate clearly determines the phase formation in the multilayers. The rapid kinetics of the combustion prevents long-range diffusion and promotes the run-away transformation. Thus, multilayer combustion synthesis using reactive Ni/Al multilayers as heat source represents a new pathway for the fabrication of single phase high-entropy alloy films.
https://doi.org/10.1016/j.matdes.2021.109790
Nanoparticle gas phase electrodeposition: fundamentals, fluid dynamics, and deposition kinetics. - In: Journal of aerosol science, ISSN 1879-1964, Bd. 151 (2021), 105652, S. 1-15
This communication uncovers missing fundamental elements and an expanded model of gas phase electrodeposition; a relatively new and in large parts unexplored process, which combines particle generation, transport zone and deposition zone in an interacting setup. The process enables selected area deposition of charged nanoparticles that are dispersed and transported by a carrier gas at atmospheric pressure conditions. Two key parameters have been identified: carrier gas flow rate and spark discharge power. Both parameters affect electrical current carried by charged species, nanoparticle mass, particle size and film morphology. In combination, these values enable to provide an estimate of the gas flow dependent Debye length. Together with Langmuir probe measurements of electric potential and field distribution, the transport can be described and understood. First, the transport of the charged species is dominated by the carrier gas flow. In close proximity, the transport is electric field driven. The transition region is not fixed and correlates with the electric potential profile, which is strongly dependent on the deposition rate. Considering the film morphology, the power of the discharge turns out to be the most relevant parameter. Low spark power combined with low gas flow leads to dendritic film growth. In contrast, higher spark power combined with higher gas flow produces compact layers.
https://doi.org/10.1016/j.jaerosci.2020.105652
Self-aligning ruthenium interconnects. - In: 2020 IEEE International Interconnect Technology Conference (IITC), (2020), S. 82-84
This contribution shows self-aligning ruthenium interconnects. The underlying process is gas phase electrodeposition, which allows metallic particles to be deposited locally. This is performed with an adjustable airgap between the insulator and the deposited metallic structure. The size of the enclosed airgap can be adjusted directly. The deposition power has a direct influence on the growth rate and the morphology of the structure. With increasing deposition power, the resulting self-aligning nano-bridge becomes more compact.
https://doi.org/10.1109/IITC47697.2020.9515654
Atomic surface structure of MOVPE-prepared GaP(111)B. - In: Applied surface science, Bd. 534 (2020), 147346
Controlling the surface formation of the group-V face of (111)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(111) virtual substrates, we investigate the atomic structure of the MOVPE (metalorganic vapor phase epitaxy)-prepared GaP(111)B surface (phosphorus face). We find that upon high-temperature annealing in the H2-based MOVPE process ambience, the surface is phosphorus-depleted, as evidenced by X-ray photoemission spectroscopy (XPS). However, a combination of density functional theory calculations and scanning tunneling microscopy (STM) suggests the formation of a partially H-terminated phosphorus surface, where the STM contrast is due to electrons tunneling from non-terminated dangling bonds of the phosphorus face. Atomic force microscopy (AFM) reveals that a high proportion of the surface is covered by islands, which are confirmed as Ga-rich by Auger electron spectroscopy (AES). We conclude that the STM images of the samples after high-temperature annealing only reflect the flat regions of the partially H-terminated phosphorus face, whereas an increasing coverage with Ga-rich islands, as detected by AFM and AES, forms upon annealing and underlies the higher proportion of Ga in the XPS measurements.
https://doi.org/10.1016/j.apsusc.2020.147346
Resistive switching behavior of lateral and vertical MoS2 devices. - In: Mikro-Nano-Integration, (2020), S. 80-84
Combinatorial gas phase electrodeposition for fabrication of three-dimensional multimodal gas sensor array. - In: Materials today, ISSN 2214-7853, Bd. 33 (2020), 6, S. 2451-2457
https://doi.org/10.1016/j.matpr.2020.01.335
Localized and programmable chemical vapor deposition using an electrically charged and guided molecular flux. - In: ACS nano, ISSN 1936-086X, Bd. 14 (2020), 10, S. 12885-12894
Chemical vapor deposition is a widely used material deposition technique. It commonly provides a uniform material flux to the substrate to cause uniform thin film growth. However, the ability to precisely adjust the local deposition rate would be highly preferable. This communication reports on a chemical vapor deposition method performed in a localized and programmable fashion by introducing an electrically charged and guided molecular flux. This allows for local adjustments of the deposition rate and three-dimensional shape by controlling the electric fields. Specifically, the precursor molecules are charged and then guided by arrays of electrodynamic funnels, which are created by a patterned dielectric layer, to predetermined deposition locations with a minimal spot size of 250 nm. Furthermore, nearest neighbor coupling is reported as a shaping method to cause the deposition of three-dimensional nanostructures. Additionally, the integration of individually addressable domain electrodes offers programmable charge dissipation to achieve an ON/OFF control. The described method is applicable to a wide variety of materials and precursors. Here, the localized and programmable deposition of three-dimensional copper oxide, chromium oxide, zinc oxide, and carbon nanowires is demonstrated.
https://doi.org/10.1021/acsnano.0c03726
Structural analysis of sputtered Sc(x)Al(1-x)N layers for sensor applications. - In: Materials science and smart materials, (2020), S. 13-18
Investigation of epitaxial graphene via Raman spectroscopy: origins of phonon mode asymmetries and line width deviations. - In: Carbon, ISSN 1873-3891, Bd. 170 (2020), S. 666-676
In this work a comprehensive study is presented for the analysis of epitaxial graphene layers using Raman spectroscopy. A wide range of graphene types is covered, from defective/polycrystalline single layer graphene to multilayer graphene with low defect density. On this basis the influence of strain type, Fermi level and number of layers on the Raman spectrum of graphene is investigated. A detailed view on the 2D/G dispersion and the respective slopes of uniaxially and biaxially strained graphene is given and its implications on the asymmetry of the G peak analyzed. A linear dependency of the phonon mode asymmetry on uniaxial strain is presented in addition to the known Fermi level dependence. Additional impacts on the asymmetry are found to be arising from the defect density and transfer doping of adsorbates. The discovered transfer doping mechanism is contrary to pure phonon excitation through excitons and exhibits increasing asymmetry with increasing Fermi level. A new characteristic correlation between the 2D mode line width and the inverse I(D)/I(G) ratio is introduced that allows the determination of the strain type and layer number and explains the difference between Raman line widths of monolayer graphene on different substrates.
https://doi.org/10.1016/j.carbon.2020.07.016
Corona assisted tuning of gallium oxide growth on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Materials science forum, ISSN 1662-9752, Bd. 1004 (2020), S. 102-109
Gallium oxide was grown on silicon carbide substrates using a corona discharge assisted vapor phase epitaxy process and gold catalyst. It is shown that by implementing the corona discharge the morphology of the gallium oxide can be transformed. The excitation of the gas phase and the generation of excited species directly influence the growth morphology suppressing nanowire growth and supporting the transformation into heteroepitaxial growth.
https://doi.org/10.4028/www.scientific.net/MSF.1004.102
Wurtzite SiC formation in plastic deformed 3C and 6H. - In: Materials science forum, ISSN 1662-9752, Bd. 1004 (2020), S. 243-248
Single side clamped 3C and 6H single crystal silicon carbide beams were elastic deformed using a special designed deformation stage in an electron microscope and subjected to high temperatures. The structural transitions occurring during the plastic relaxation process were recorded in situ in the electron microscope using reflection high energy electron diffraction in {110} azimuthal direction. For both polytypes, a polytype phase transition into the wurtzite silicon carbide polytype was observed independent on the surface polarity. The critical initial elastic deformation of the polytype phase transition into the wurtzite phase for the cubic silicon carbide polytype is larger compared to the 6H-SiC. This is due to the higher partial dislocation densities needed to transform the cubic modification into the wurtzite phase.
https://doi.org/10.4028/www.scientific.net/MSF.1004.243
Graphene quality assessment using an entropy approach of SEM images. - In: Materials science forum, ISSN 1662-9752, Bd. 1004 (2020), S. 525-530
In this work a new approach of analyzing epitaxial graphene layers on semi-insulating SiC through the gray-scale entropy of SEM images as a measure for the graphene inhomogeneity is demonstrated. Raman spectroscopy as a versatile and the standard tool for graphene characterization allows additionally the determination of the layer properties such as layer count, Fermi level, defect concentration and strain. It is shown that the gray-scale entropy correlates with the defect density derived from Raman measurements and thus can be used as an additional characterization technique with much higher resolution than the conventional Raman spectroscopy allows. As a consequence, the results are used to reflect the two-stepped growth itself and to conclude for advantageous growth conditions.
https://doi.org/10.4028/www.scientific.net/MSF.1004.525
Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001). - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM) together with the DPG Division Environmental Physics and the Working Groups Accelerator Physics; Equal Opportunities; Energy; Industry and Business; Physics, Modern IT and Artificial Intelligence, Young DPG, (2020), O 80.3
Surface structure of MOVPE-prepared GaP(111)B. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM) together with the DPG Division Environmental Physics and the Working Groups Accelerator Physics; Equal Opportunities; Energy; Industry and Business; Physics, Modern IT and Artificial Intelligence, Young DPG, (2020), O 91.2
Vertical current transport processes in MOS-HEMT heterostructures. - In: Applied surface science, Bd. 527 (2020), 146605
https://doi.org/10.1016/j.apsusc.2020.146605
Imprinting the polytype structure of silicon carbide by rapid thermal processing. - In: Crystals, ISSN 2073-4352, Bd. 10 (2020), 6, 523, insges. 21 S.
https://doi.org/10.3390/cryst10060523
RF properties of stretchable transmission line structures. - In: 2020 German Microwave Conference, (2020), S. 272-275
https://ieeexplore.ieee.org/document/9080242
Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001). - In: Surface science, ISSN 1879-2758, Bd. 699 (2020), 121638
https://doi.org/10.1016/j.susc.2020.121638
Transformation of the buffer layer grown on 4H-SiC to single-layer graphene by ex situ hydrogen intercalation. - In: Fullerenes, nanotubes & carbon nanostructures, ISSN 1536-4046, Bd. 28 (2020), 4, S. 316-320
https://doi.org/10.1080/1536383X.2019.1708733
Bonding mechanisms in laser-assisted joining of metal-polymer composites. - In: Journal of advanced joining processes, ISSN 2666-3309, Bd. 1 (2020), 100008, insges. 12 S.
Metal-Plastic hybrid components and assemblies are gaining importance due to novel lightweight constructions and a growing integration of functions by using the right material at the right place. Thermal joining enables a joining technology for thermoplastic materials and engineering metals without using adhesive or joining elements. The paper provides novel investigations on the interaction between form fit and physicochemical interactions due to the combined use of specifically used oxide layers, interaction barriers and defined surface structuring by laser processing. Thereby, the design of experiments allows the investigation of the form fit as dominant interaction mode.
https://doi.org/10.1016/j.jajp.2020.100008
Automated parameter extraction of ScAlN MEMS devices using an extended Euler-Bernoulli beam theory. - In: Sensors, ISSN 1424-8220, Bd. 20 (2020), 4, 1001, insges. 19 S.
https://doi.org/10.3390/s20041001
Electrodeposition of aluminium-nickel films in 1-butyl-1-methylpyrrolidinium-bis(trifluoromethylsulfonyl) amide. - In: Meeting abstracts, ISSN 2151-2043, Bd. MA2019-02 (2019), 17, 963
https://doi.org/10.1149/MA2019-02/17/963
Impurity effects on nucleation and growth of SiC clusters and layers on Si(100) and Si(111). - In: Physics of the solid state, ISSN 1090-6460, Bd. 61 (2019), 12, S. 2468-2472
https://doi.org/10.1134/S1063783419120382
Optical estimation of the carrier concentration and the value of strain in monolayer graphene grown on 4H-SiC. - In: Semiconductors, ISSN 1090-6479, Bd. 53 (2019), 14, S. 1904-1909
https://doi.org/10.1134/S1063782619140057
LTCC as substrate - enabling semiconductor and packaging integration. - In: 2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC), (2019), insges. 4 S.
https://doi.org/10.23919/EMPC44848.2019.8951794
Corona discharge assisted growth morphology switching of tin-doped gallium oxide for optical gas sensing applications. - In: Crystal growth & design, ISSN 1528-7505, Bd. 19 (2019), 12, S. 6945-6953
https://doi.org/10.1021/acs.cgd.9b00678
Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates. - In: Silicon carbide and related materials 2018, (2019), S. 127-130
Dünnschichtstrukturierung metallorganischer Resinatpasten auf Glaswafern. - In: MikroSystemTechnik Kongress 2019, (2019), S. 607-609
Gas phase electrodeposition enabling the programmable three-dimensional growth of a multimodal room temperature nanobridge gas sensor array. - In: ACS applied materials & interfaces, ISSN 1944-8252, Bd. 11 (2019), 36, S. 33497-33504
https://doi.org/10.1021/acsami.9b12545
Integrated multilayer stretchable printed circuitboards paving the way for deformable active matrix. - In: Nature Communications, ISSN 2041-1723, Bd. 10 (2019), 4909, S. 1-8
https://doi.org/10.1038/s41467-019-12870-7
Fluidic self-assembly on electroplated multilayer solder bumps with tailored transformation imprinted melting points. - In: Scientific reports, ISSN 2045-2322, Bd. 9 (2019), 11325, S. 1-8
https://doi.org/10.1038/s41598-019-47690-8
Spectroscopic characterization of sputtered ScAlN thinfilms. - In: DPG-Frühjahrstagung 2019 (DPG Spring Meeting 2019) of the Condensed Matter Section (SKM) together with the Division Radiation and Medical Physics and the Working Groups Equal Opportunities, Industry and Business, Young DPG; Symposia, exhibition of scientific instruments and literature, (2019), HL 35.6
Metamorphic stretchable touchpad. - In: Advanced Materials Technologies, ISSN 2365-709X, Bd. 4 (2019), 4, 1800446, insges. 6 S.
https://doi.org/10.1002/admt.201800446
Comprehensive (S)TEM characterization of polycrystalline GaN/AlN layers grown on LTCC substrates. - In: Ceramics international, ISSN 1873-3956, Bd. 45 (2019), 7, S. 9114-9125
https://doi.org/10.1016/j.ceramint.2019.01.250
Corona assisted gallium oxide nanowire growth on silicon carbide. - In: Journal of crystal growth, Bd. 509 (2019), S. 107-111
https://doi.org/10.1016/j.jcrysgro.2018.12.033
Metamorphic and stretchable electronic systems - a materials, assembly, and interconnection challenge. - In: Microsystems technology in Germany, ISSN 2191-7183, (2018), S. 64-65
Self aligning growth of nanoparticle-based interconnects. - In: 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), (2018), insges. 4 S.
https://doi.org/10.1109/NMDC.2018.8605857
High quality graphene grown by sublimation on 4H-SiC (0001). - In: Semiconductors, ISSN 1090-6479, Bd. 52 (2018), 14, S. 1882-1885
https://doi.org/10.1134/S1063782618140154
Core-shell transformation-imprinted solder bumps enabling low-temperature fluidic self-assembly and self-alignment of chips and high melting point interconnects. - In: ACS applied materials & interfaces, ISSN 1944-8252, Bd. 10 (2018), 47, S. 40608-40613
https://doi.org/10.1021/acsami.8b12390
Stress-adaptive meander track for stretchable electronics. - In: Flexible and printed electronics, ISSN 2058-8585, Bd. 3 (2018), 3, 032001, S. 1-7
Stretchable metallic interconnects are commonly designed using a meander-shaped metal track with a uniform width. This article reports on a 'stress-adaptive' metal track design which varies in width to accommodate the produced torque in the metal track during stretching. The stress-adaptive design is inspired by computational and experimental studies of two conventional meander-shape metal tracks identifying a common failure mode; specifically, the propagation of torque leading to twist and mechanical fatigue. The understanding gained led to the stress-adaptive design. The stress-adaptive structure is compared with horseshoe- and U-shaped references and shows improvements in the stress distribution, levels of twist, maximum level of elongation (>320%), and required stretch and release cycles (>6000 at 150% elongation) to cause failure in a long term cycling test.
https://doi.org/10.1088/2058-8585/aad583
Defects and polytype instabilities. - In: Silicon carbide and related materials 2017, (2018), S. 147-150
Infrared reflectance study of the graphene/semi-insulating 6H-SiC(0001) heterostructure. - In: Silicon carbide and related materials 2017, (2018), S. 314-317
MOCVD compatible atomic layer deposition process of Al2O3 on SiC and graphene/SiC heterostructures. - In: Silicon carbide and related materials 2017, (2018), S. 506-510
Im Titel sind "2" und "3" tiefgestellt
Structure and formation of trivalent chromium conversion coatings containing cobalt on zinc plated steel. - In: Journal of the Electrochemical Society, ISSN 1945-7111, Bd. 165 (2018), 10, Seite C657-C669
https://doi.org/10.1149/2.0951810jes
Radiative pumping and propagation of plexcitons in diffractive plasmonic crystals. - In: Nano letters, ISSN 1530-6992, Bd. 18 (2018), 8, S. 4927-4933, insges. 7 S.
Gesehen am 11.03.2020
Strong coupling between plasmons and excitons leads to the formation of plexcitons: quasiparticles that combine nanoscale energy confinement and pronounced optical nonlinearities. In addition to these localized modes, the enhanced control over the dispersion relation of propagating plexcitons may enable coherent and collective coupling of distant emitters. Here, we experimentally demonstrate strong coupling between carbon nanotube excitons and spatially extended plasmonic modes formed via diffractive coupling of periodically arranged gold nanoparticles (nanodisks, nanorods). Depending on the light-matter composition, the rather long-lived plexcitons (>100 fs) undergo highly directional propagation over 20 m. Near-field energy distributions calculated with the finite-difference time-domain method fully corroborate our experimental results. The previously demonstrated compatibility of this plexcitonic system with electrical excitation opens the path to the realization of a variety of ultrafast active plasmonic devices, cavity-assisted energy transport and low-power optoelectronic components.
https://doi.org/10.1021/acs.nanolett.8b01733
Magnetron sputtered AlN layers on LTCC multilayer and silicon substrates. - In: Coatings, ISSN 2079-6412, Bd. 8 (2018), 8, 289, S. 1-19
https://doi.org/10.3390/coatings8080289
Localized collection of airborne biological hazards for environmental monitoring. - In: Sensors and actuators, ISSN 0925-4005, Bd. 273 (2018), S. 906-915
https://doi.org/10.1016/j.snb.2018.06.129
Metamorphic stretchable electronics. - Ilmenau : Universitätsbibliothek, 2018. - 1 Online-Ressource (XXIV, 139 Seiten)
Technische Universität Ilmenau, Dissertation 2018
Die jüngsten Fortschritte auf dem Gebiet der Elektronik wenden sich der Realisierung mechanischer dehnbarer Elektroniken zu. Diese sind in der Lage sich umzuwandeln um neue Formfaktoren anzunehmen. Um eine nahtlose Integration der Elektronik in unsere Alltagsgegenstände und viele weitere Anwendungsfelder zu ermöglichen, bei denen herkömmliche starre elektronische Systeme nicht ausreichen, ist mechanische Dehnbarkeit notwendig. Diese Arbeit zielt darauf ab, eine dehnbare Leiterplattentechnologie (sPCB) zu demonstrieren, die mit industriellen Herstellungsprozessen kompatibel ist. Idealerweise soll das starre Trägersubstrat der konventionellen Elektronik durch ein dehnbares Gummisubstrat mit dehnbaren Leiterbahnen ersetzt werden. Zunächst wurde eine Methode entwickelt, um eine industrietaugliche, einlagige, dehnbare Leiterplatte zu realisieren. Der dargestellte Ansatz unterscheidet sich von anderen Methoden in diesem Bereich, welche die Metallisierung auf dem Gummisubstrat aufbringen und die Komponenten anschließend darauf montieren. Dadurch leiden diese unter einer geringeren Ausrichtung und Fixierung. Stattdessen wird im dargestellten Ansatz ein harter Träger verwendet, der den Einsatz des dehnbaren Gummimaterials bis ans Ende der Prozesskette verschiebt. Diese Single-Layer-Methode wurde weiterentwickelt, um mehrschichtige, integrierte sPCB zu realisieren, bei der verschiedene Metallisierungsebenen durch vertikalen Durchkontaktierungen (VIA) miteinander verbunden werden. Auch dieses Verfahren verwendet konventionelle starre Träger für den Herstellungsprozess. Wie in der konventionellen Leiterplattentechnologie ist auch die Herstellung auf starren Trägern wichtig, da sie Folgendes ermöglicht: Ausrichtung und Registrierung, Hochtemperaturprozesse, konventionelle Chip-Bestückung durch Roboter und "On-Hard-Carrier"-Bauteiltests. Darüber hinaus ermöglicht die dargestellte Methode den direkten Einsatz handelsüblicher SMDs, was für die einfache Realisierung komplexer elektronischer Schaltungen wichtig ist. Als Endsubstrat kommt ein hochelastisches Silikonmaterial (EcoFlex) zum Einsatz, welches die Bauelementebenen einkapselt. Um die Bauelementebenen vom harten Träger auf das weiche Substrat zu übertragen, wird ein einstufiges, waferbasiertes und lösungsmittelfreies Ablöseverfahren eingesetzt, bei dem die differentielle Grenzflächenadhäsion einer Multi-Opferschichten genutzt wird. Für die hochelastischen Leiterbahnen wurde ein neues Mäander-Metallbahndesign entwickelt, welches als "spannungsadaptiv" bezeichnet wird. Die neue Mäander-Metallbahn variiert in ihrer Breite, um das einwirkende Drehmoment in den Metallbahnen, aufgrund der ungleichmäßigen Spannungsverteilung über die Mäander-Schleifen, aufzunehmen. Das spannungsadaptive Design zeigt eine signifikante Verbesserung der Spannungsverteilungen auf den Metallbahnen und führt experimentell zu einem höheren Niveau der maximalen Dehnung und der Anzahl der Dehnungszyklen. Es wurde eine breite Palette von dehnbaren Systemen demonstriert, darunter Elektronik, Optoelektronik, Akustoelektronik und Sensor-Arrays. Die Demonstratoren, auf Basis einer einzigen Metallisierungsschicht in einer Gummimatrix, enthalten Arrays mit gehäusten SMDs, LED-Nacktchips, laborgefertigte Si [my]-Transistoren und MEMS-Mikrofone. Weiterhin wird eine integrierte Multilayer-sPCB mit Chip-großen LEDs und Transistoren demonstriert, um eine adressierbare aktive Matrix zu realisieren. Dieser Prototyp demonstriert die Machbarkeit von integrierten Multilayer-sPCB und wird im Prinzip dazu führen, dass jedes heute bekannte elektronische System in ein äquivalentes dehnbares System überführt werden kann. Schließlich stellt diese Arbeit das bahnbrechende Konzept der metamorphen Elektronik vor, welche sich umwandeln kann um neue Topologien und Formfaktoren anzunehmen. Es werden verschiedene Arten von Deformationsmechanismen demonstriert, darunter das Aufblasen von gleichförmigen oder strukturierten Gummimembranen, 3D-geführte Deformationen und Vakuumformung in Kombination mit 3D-Schablonen. Die Palette der Topologien reicht dabei von halbkugelförmig, kugelförmig, konkav/konvex, pyramidenförmig, turmartig, bis hin zu komplexeren 3D-Formen, darunter Bienenaugen-Strukturen.
http://nbn-resolving.de/urn:nbn:de:gbv:ilm1-2018000172
Reconstruction of concentration profiles in heterostructures with chemically modified interfaces. - In: Journal of applied physics, ISSN 1089-7550, Bd. 123 (2018), 21, 215302, insges. 9 S.
https://doi.org/10.1063/1.5010287
Electrodeposition of aluminum and aluminum-ruthenium films in ionic liquids. - In: Meeting abstracts, ISSN 2151-2043, Bd. MA2017-02 (2017), 19, 971
https://doi.org/10.1149/MA2017-02/19/971
Automated reel-to-reel fluidic self-assembly enabling the production of solid state lighting panels. - In: 21. Deutsche Physikerinnentagung, (2017), S. 100
Low temperature epitaxial deposition of GaN on LTCC substrates. - In: 2017 WiPDA, ISBN 978-1-5386-3117-1, (2017), S. 48-54
https://doi.org/10.1109/WiPDA.2017.8170501
Lokalisierter Transport von Schwebstoffen zu programmierbaren, mikroskopischen Sensorpunkten durch Korona-Entladung. - In: MikroSystemTechnik Kongress 2017 "MEMS, Mikroelektronik, Systeme", (2017), S. 578-581
Bleifreier Lotstapel für fluidische Selbstmontage von Siliziumchips. - In: MikroSystemTechnik Kongress 2017 "MEMS, Mikroelektronik, Systeme", (2017), S. 437-439
Selbstjustierendes Wachstum von 3D-Nanobrückenverbindungen. - In: MikroSystemTechnik Kongress 2017 "MEMS, Mikroelektronik, Systeme", (2017), S. 317-320
Graphene nanoribbons for electronic devices. - In: Annalen der Physik, ISSN 1521-3889, Bd. 529 (2017), 11, 1700033, S. 1-15
https://doi.org/10.1002/andp.201700033
Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium. - In: Technical physics letters, ISSN 1090-6533, Bd. 43 (2017), 9, S. 849-852
https://doi.org/10.1134/S106378501709022X
3D metamorphic stretchable microphone arrays. - In: Advanced Materials Technologies, ISSN 2365-709X, Bd. 2 (2017), 10, 1700131, insges. 11 S.
https://doi.org/10.1002/admt.201700131
Multispectral electroluminescence enhancement of single-walled carbon nanotubes coupled to periodic nanodisk arrays. - In: Optics express, ISSN 1094-4087, Bd. 25 (2017), 15, S. 18092-18106
https://doi.org/10.1364/OE.25.018092
Metamorphic hemispherical microphone array for three-dimensional acoustics. - In: Applied physics letters, ISSN 1077-3118, Bd. 111 (2017), 4, 043109, insges. 5 S.
http://dx.doi.org/10.1063/1.4985710
Nanostructuring of graphene on semi-insulating SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 897 (2017), S. 735-738
https://doi.org/10.4028/www.scientific.net/MSF.897.735
High temperature grown graphene on SiC studied by raman and FTIR spectroscopy. - In: Materials science forum, ISSN 1662-9752, Bd. 897 (2017), S. 727-730
https://doi.org/10.4028/www.scientific.net/MSF.897.727
Corona assisted Ga based nanowire growth on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Materials science forum, ISSN 1662-9752, Bd. 897 (2017), S. 642-645
https://doi.org/10.4028/www.scientific.net/MSF.897.642
Effect of post-annealing treatment on the structure and luminescence properties of AIN:Tb3+ thin films prepared by radio frequency magnetron sputtering. - In: Materials science forum, ISSN 1662-9752, Bd. 890 (2017), S. 299-302
Im Titel ist "3+" hochgestellt
https://doi.org/10.4028/www.scientific.net/MSF.890.299
Size effect of the silicon carbide Young's modulus. - In: Physica status solidi, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600390, insges. 9 S.
https://doi.org/10.1002/pssa.201600390
Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600415, insges. 7 S.
https://doi.org/10.1002/pssa.201600415
AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600416, insges. 6 S.
https://doi.org/10.1002/pssa.201600416
Deformable printed circuit boards that enable metamorphic electronics. - In: NPG Asia Materials, ISSN 1884-4057, 8 (2016), e336, 8 Seiten
http://dx.doi.org/10.1038/am.2016.186
Surface lattice resonances for enhanced and directional electroluminescence at high current densities. - In: ACS photonics, ISSN 2330-4022, Bd. 3 (2016), 12, S. 2225-2230, insges. 6 S.
Gesehen am 01.10.2021
http://dx.doi.org/10.1021/acsphotonics.6b00491
Influence of thermal and oxidative treatments on the electronic surface properties of In2O3 films. - In: 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM), (2016), HL 23.6, insges. 1 S.
Im Titel ist "2" und "3" tiefgestellt
Large-area fabrication of TiN nanoantenna arrays for refractory plasmonics in the mid-infrared. - In: 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM), (2016), O 33.11, insges. 1 S.
2D electronics - opportunities and limitations. - In: 2016 46th European Solid-State Device Research Conference (ESSDERC), ISBN 978-1-5090-2969-3, (2016), S. 230-235
http://dx.doi.org/10.1109/ESSDERC.2016.7599628
Concentration profile simulation of SiC/Si heterostructures. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 501-504
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.501
Heteropolytypic superlattices. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 278-282
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.278
Tri-gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-substrates. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 1174-1177
Im Titel sind "0.2" und "0.8" tiefgestellt
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.1174
Amplification in graphene nanoribbon junctions. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 1141-1144
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.1141
Broadband tunable, polarization-selective and directional emission of (6,5) carbon nanotubes coupled to plasmonic crystals. - In: Nano letters, ISSN 1530-6992, Bd. 16 (2016), 5, S. 3278-3284, insges. 7 S.
Gesehen am 01.10.2021
http://dx.doi.org/10.1021/acs.nanolett.6b00827
Simulation of 50-nm gate graphene nanoribbon transistors. - In: Electronics, ISSN 2079-9292, Bd. 5 (2016), 1, 3, insges. 17 S.
This article belongs to the Special Issue "Two-dimensional electronics - prospects and challenges", ISBN 978-3-03842-250-1
https://doi.org/10.3390/electronics5010003
Surface tension directed fluidic self-assembly of semiconductor chips across length scales and material boundaries. - In: Micromachines, ISSN 2072-666X, Bd. 7 (2016), 4, 54, insges. 13 S.
https://doi.org/10.3390/mi7040054
Approaching gas phase electrodeposition: process and optimization to enable the self-aligned growth of 3D nanobridge-based interconnects. - In: Advanced materials, ISSN 1521-4095, Bd. 28 (2016), 9, S. 1770-1779
https://doi.org/10.1002/adma.201503039
Elastic properties of nanolaminar Cr2AlC films and beams determined by in-situ scanning electron microscope bending tests. - In: Thin solid films, ISSN 1879-2731, Bd. 604 (2016), S. 85-89
Im Titel ist "2" tiefgestellt
http://dx.doi.org/10.1016/j.tsf.2016.03.026
Application of nanostructuring, nanomaterials and micro-nano-integration for improved components and system's performance. - In: 2016 Pan Pacific Microelectronics Symposium (Pan Pacific), ISBN 978-0-9888873-9-8, (2016), insges. 10 S.
http://dx.doi.org/10.1109/PanPacific.2016.7428387
Planar nanowire transistors from two-dimensional materials. - In: Materials science in semiconductor processing, ISSN 1873-4081, Volume 42 (2016), Part 2 (Feb.), Seite 183-187
https://doi.org/10.1016/j.mssp.2015.07.068
Approaching roll-to-roll fluidic self-assembly: relevant parameters, machine design, and applications. - In: Journal of microelectromechanical systems, ISSN 1941-0158, Bd. 24 (2015), 6, S. 1928-1937
https://doi.org/10.1109/JMEMS.2015.2452772
Large-area fabrication of TiN nanoantenna arrays for refractory plasmonics in the mid-infrared by femtosecond direct laser writing and interference lithography. - In: Optical materials express, ISSN 2159-3930, Bd. 5 (2015), 11, S. 2625-2633
https://doi.org/10.1364/OME.5.002625
Mechanical properties and residual stress of thin 3C-SiC(100) films determined using MEMS structures. - In: Materials science forum, ISSN 1662-9752, Bd. 821/823 (2015), S. 281-284
http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.281
Automated reel-to-reel fluidic self-assembly for the production of solid state lighting modules. - In: MRS online proceedings library, ISSN 1946-4274, Bd. 1761 (2015), insges. 6 S.
We report the implementation of a first automated reel-to-reel fluidic self-assembly system based on surface tension driven self-assembly for macroelectronics application. The reported system incorporates precisely controlled and automated agitation, web moving and component recycling and dispensing system and enables continuous parallel assembly of semiconductor chips at a high rate (15k chips per hour using 2.5 cm wide web) and assembly yield (>99%) under optimal condition. In principle, scaling to any throughput should be possible considering the parallel nature of self-assembly. The process overcomes the limitations on area and throughput of prior methods. It provides a new platform for macroelectronics to enable the integration of microscopic high performance inorganic semiconductors on flexible or stretchable substrates with any desired location, pitch, and integration density. As an example we demonstrate the fabrication of a solid state area lighting panel.
https://doi.org/10.1557/opl.2015.679
Ge addition during 4H-SiC epitaxial growth by CVD: mechanism of incorporation. - In: Materials science forum, ISSN 1662-9752, Bd. 821/823 (2015), S. 115-120
http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.115
Millimeter thin and rubber-like solid-state lighting modules fabricated using roll-to-roll fluidic self-assembly and lamination. - In: Advanced materials, ISSN 1521-4095, Bd. 27 (2015), 24, S. 3661-3668
http://dx.doi.org/10.1002/adma.201500839
Nanostrukturierte Ladungsträgergase für nicht-klassische Bauelementekonzepte, 2015. - Online-Ressource (PDF-Datei: XVIII, 132 Bl., 9,47 MB) Ilmenau : Techn. Univ., Diss., 2015
In der Forschung rücken neben der etablierten Siliziumtechnologie immer mehr auch alternative Bauelemente und Materialien in den Mittelpunkt, die bestehenden Grenzen der Funktionalität überschreiten können. Die Arbeit beschäftigt sich mit diesen beiden Ansätzen. Zum einen wird AlGaN/GaN als Beispiel für Heterosysteme vorgestellt. Es wird gezeigt, wie ein zweidimensionales Ladungsträgergas an der AlGaN/GaN-Grenzfläche entsteht. Mit Hilfe von Simulationen wird der Einfluss von Parametern wie Aluminiumgehalt und Barrieredicke auf Ladungsträgerdichte und -beweglichkeit untersucht. Der praktische Schwerpunkt dieser Arbeit liegt auf dem Entwurf und der Realisierung von AlGaN/GaN-basierten Nanostrukturen, die durch nicht-klassische Effekte eine Vielzahl von Anwendungsmöglichkeiten als Gleichrichter, Seitengate-Transistoren, logischer Gatter und selektiven Schaltern eröffnen. Eine solche universelle Struktur ist das Three-Terminal Junction (TTJ) Bauelement. Der von anderen Materialsystemen bekannte Aufbau wird auf AlGaN/GaN überführt. Es wird gezeigt, wie sich geometrische Anordnung (T- und Y-Aufbau) sowie strukturelle und externe Parameter (Kontaktbalkenbreite, -länge, Temperatur) auf seine Funktion auswirken. Durch eine Fortentwicklung des T-Aufbaus kann der Self-Gating-Effekt dieser Bauelementeart forciert werden. Darüber hinaus wurde in den hergestellten Strukturen erstmalig eine positive Gleichrichtung beobachtet. In der vorliegenden Arbeit wird auch dieser untersucht und die bestimmenden Effekte für sein Auftreten (physikalische Effekte sowie essentielle Strukturparameter) systematisch analysiert und erläutert. Aufgrund des Aufbaus und der Funktion kann man auch von T-Gleichrichtbauelementen und Y-Gleichrichtbauelementen sprechen. Darüber hinaus wird ein Ausblick auf weitere Bauelemente gegeben, die sich in AlGaN/GaN- Heterosysteme überführen lassen und neue Anwendungsfelder eröffnen. Dabei werden Dioden vorgestellt, die auf geometrischer Grundlage ohne Dotierstoff- oder Materialübergang realisiert werden können und daher besonders für alle Arten von zweidimensionalen Materialien geeignet sind. Zudem lassen sich die TTJ-Bauelemente durch leichte Veränderungen in Transistoren mit Seitengate-Steuerung überführen. Diese Bauelemente wurden ebenfalls hergestellt und untersucht.
http://www.db-thueringen.de/servlets/DocumentServlet?id=26139
Partnerschaft 2 - Institut für Mikro- und Nanoelektronik, Fachgebiet Nanotechnologie (TU Ilmenau) und Institut für Elektronik und Photonik, Lehrstuhl Mikroelektronik (STU Bratislava). - In: Retrospektive 50 Jahre Zusammenarbeit Slowakische Technische Universität Bratislava - Technische Universität Ilmenau, (2015), S. 38-48
Two-dimensional materials and their prospects in transistor electronics. - In: Nanoscale, ISSN 2040-3372, Bd. 7 (2015), 18, S. 8261-8283
https://doi.org/10.1039/C5NR01052G
Localized collection of airborne analytes: a transport driven approach to improve the response time of existing gas sensor designs including SERS based detection of small molecules. - In: MRS online proceedings library, ISSN 1946-4274, Bd. 1746 (2015)
We describe a new transport mechanism that supports the localized collection of airborn analytes at higher rates when compared to diffusion based standard commonly used. It combines advanced aerosol science with novel nanosensor designs. Background: The detection of single molecular binding events has been a recent trend in sensor research introducing various sensor designs where the active sensing elements are nanoscopic in size. While it is possible to detect single binding events, the research has not yet addressed the question of how to effectively transport airborne analytes to these point-like sensing structures. Currently, diffusion-only-transport is used and it becomes increasingly unlikely for an analyte molecule to "find" and interact with sensing structures where the active area is shrunk in size, trading an increased sensitivity with a long response time. Approach: Instead of using diffusion-only-transport, this report introduces various analyte charging methods and electrodynamic nanolens based analyte concentration concepts to transport airborne analytes to nanoscopic sensing points to improve the response time of existing gas sensor designs. We demonstrate localized collection of analytes over a wide range of molecular weights ranging from 3×1017 to 1×102 Daltons, including (i) microscopic analyte particles, (ii) inorganic nanoparticles, all the way down to (iii) small organic molecules. We also demonstrate first experimental results towards an programmable active matrix based analyte collection approach referred to as "Airborn Analyte Memory Chip/Recorder" for "OFFSITE" analyte analysis, which (i) takes samples of the particles or molecules in an Aerosol at specific points in time, (ii) transports the analyte sample to a designated spot on a surface, (iii) concentrates the analyte at this spot to achieve an amplification, (iv) repeats this sequence until the recording matrix is full, and (v) reads out the analyte matrix on the chip. Implications: In all cases we find that the collection rate is several orders of magnitudes higher than in the case where the discovered collection schemes is turned off and where collection is driven by diffusion-only-transport. The collection scheme is integrated on an existing surface-enhanced Raman spectroscopy based sensor. In terms of response time, the process is able to detect analytes at 9 parts per million within 1 second. As a comparison, 1 hour is required to reach the same signal level when diffusion-only-transport is used. The novel "Airborn Analyte Memory Chip/Recorder" achieved by this approach could be a commodity item that is placed in an environment that a user would like to keep a record from. The information is retrieved on an as needed basis. Offsite analysis of the chip storing the information would make this approach more economical than an online monitoring system for all kinds of threads.
http://dx.doi.org/10.1557/opl.2015.398
High-frequency performance of GaN high-electron mobility transistors on 3C-SiC/Si substrates with Au-free ohmic contacts. - In: IEEE electron device letters, Bd. 36 (2015), 2, S. 123-125
http://dx.doi.org/10.1109/LED.2014.2379664
GaN HEMTs on Si substrate with high cutoff frequency. - In: 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), ISBN 978-1-4799-5476-6, (2014), insges. 4 S.
We report on GaN HEMTs on Si substrates with high cutoff frequency and low contact resistance. HEMTs with two barriers designs and two source/drain metallization schemes have been fabricated and characterized. Our 100-nm gate transistors show a maximum drain current density of 1.4 A/mm and a peak transconductance of 427 mS/mm. The fastet transistors have a gate length of 80 nm and achieve a cutoff frequency fT of 180 GHz. This is the best fT performance reported for GaN HEMTs on Si reported so far and rivals the fastest GaN HEMTs on SiC with comparable gate length.
http://dx.doi.org/10.1109/ASDAM.2014.6998660
BioMEMS for analysis and synthesis in life sciences. - In: Biomedical engineering, ISSN 1862-278X, Bd. 59.2014, Suppl. 1, S. S127
http://dx.doi.org/10.1515/bmt-2014-5001
Active matrix-based collection of airborne analytes: an analyte recording chip providing exposure history and finger print. - In: Advanced materials, ISSN 1521-4095, Bd. 26 (2014), 45, S. 7600-7607
https://doi.org/10.1002/adma.201402589
Localized collection of airborne analytes: a transport driven approach to improve the response time of existing gas sensor designs including SERS based detection of small molecules. - In: Mikro-Nano-Integration, (2014), S. 62-65
We describe a new transport mechanism that supports the localized collection of airborn analytes at higher rates when compared to diffusion based standard commonly used. It combines advanced aerosol science with novel nanosensor designs. Background: The detection of single molecular binding events has been a recent trend in sensor research introducing various sensor designs where the active sensing elements are nanoscopic in size. While it is possible to detect single binding events, the research has not yet addressed the question of how to effectively transport airborne analytes to these point-like sensing structures. Currently, diffusion-only-transport is used and it becomes increasingly unlikely for an analyte molecule to “find” and interact with sensing structures where the active area is shrunk in size, trading an increased sensitivity with a long response time. Approach: Instead of using diffusion-only-transport, this report introduces various analyte charging methods and electrodynamic nanolens based analyte concentration concepts to transport airborne analytes to nanoscopic sensing points to improve the response time of existing gas sensor designs. We demonstrate localized collection of analytes over a wide range of molecular weights ranging from 3×1017 to 1×102 Daltons, including (i) microscopic analyte particles, (ii) inorganic nanoparticles, all the way down to (iii) small organic molecules. We also demonstrate first experimental results towards an programmable active matrix based analyte collection approach referred to as "Airborn Analyte Memory Chip/Recorder" for "OFFSITE" analyte analysis, which (i) takes samples of the particles or molecules in an Aerosol at specific points in time, (ii) transports the analyte sample to a designated spot on a surface, (iii) concentrates the analyte at this spot to achieve an amplification, (iv) repeats this sequence until the recording matrix is full, and (v) reads out the analyte matrix on the chip. Implications: In all cases we find that the collection rate is several orders of magnitudes higher than in the case where the discovered collection schemes is turned off and where collection is driven by diffusion-only-transport. The collection scheme is integrated on an existing surface-enhanced Raman spectroscopy based sensor. In terms of response time, the process is able to detect analytes at 9 parts per million within 1 second. As a comparison, 1 hour is required to reach the same signal level when diffusion-only-transport is used. The novel "Airborn Analyte Memory Chip/Recorder" achieved by this approach could be a commodity item that is placed in an environment that a user would like to keep a record from. The information is retrieved on an as needed basis. Offsite analysis of the chip storing the information would make this approach more economical than an online monitoring system for all kinds of threads.
Automated reel-to-reel fluidic self-assembly enabling the production of solid state lighting panels. - In: Mikro-Nano-Integration, (2014), S. 124-126
We report the implementation of a first automated reel-to-reel fluidic self-assembly system based on surface tension driven self-assembly for macroelectronics application. The reported system incorporates precisely controlled and automated agitation, web moving and component recycling and dispensing system and enables continuous parallel assembly of semiconductor chips at a high rate (15k chips per hour using 2.5 cm wide web) and assembly yield (>99%) under optimal condition. In principle, scaling to any throughput should be possible considering the parallel nature of self-assembly. The system was carefully optimized to accomplish defect free assembly with computations and comparisons of the relevant forces under various operation conditions. The process overcomes the limitations on area and throughput of prior methods. It provides a new platform for macroelectronics to enable the integration of microscopic high performance inorganic semiconductors on flexible or stretchable substrates with any desired location, pitch, and integration density. As an example we demonstrate the fabrication of a solid state area lighting panel.
Densification of thin aluminum oxide films by thermal treatments. - In: Materials sciences and applications, ISSN 2153-1188, Bd. 5 (2014), 8, S. 628-638
Thin AlOx films were grown on 4H-SiC by plasma-assisted atomic layer deposition (ALD) and plasma assisted electron-beam evaporation at 300˚C. After deposition, the films were annealed in nitrogen at temperatures between 500˚C and 1050˚C. The films were analyzed by X-ray reflectivity (XRR) and atomic force microscopy (AFM) in order to determine film thickness, surface roughness and density of the AlOx layer. No differences were found in the behavior of AlOx films upon annealing for the two different employed deposition techniques. Annealing results in film densification, which is most prominent above the crystallization temperature (800˚C). In addition to the increasing density, a mass loss of ˜5% was determined and attributed to the presence of aluminum oxyhydroxide in as deposited films. All changes in film properties after high temperature annealing appear to be independent of the deposition technique.
http://dx.doi.org/10.4236/msa.2014.58065
A first implementation of an automated reel-to-reel fluidic self-assembly machine. - In: Advanced materials, ISSN 1521-4095, Bd. 26 (2014), 34, S. 5942-5949
A first automated reel-to-reel fluidic selfassembly process for macroelectronic applications is reported. This system enables high-speed assembly of semiconductor dies (15 000 chips per hour using a 2.5 cm-wide web) over large-area substrates. The optimization of the system (>99% assembly yield) is based on identification, calculation, and optimization of the relevant forces. As an application, the production of a solid-state lighting panel is discussed, involving a novel approach to apply a conductive layer through lamination.
http://dx.doi.org/10.1002/adma.201401573
Size effect of Young's modulus in AlN thin layers. - In: Journal of applied physics, ISSN 1089-7550, Bd. 116 (2014), 12, 124306, insges. 4 S.
https://doi.org/10.1063/1.4896496
Improvement of P3HT-ICBA solar cell photovoltaic characteristics due to the incorporation of the maleic anhydride additive: P3HT morphology study of P3HT-ICBA and P3HT-ICBA-MA films by means of X-band LESR. - In: Synthetic metals, Bd. 197 (2014), S. 210-216
http://dx.doi.org/10.1016/j.synthmet.2014.09.012
Integration of hydrogels into BioMEMS. - In: Shaping the future by engineering, (2014), insges. 9 S.
Multifrequency X,W-band ESR study on photo-induced ion radical formation in solid films of mono- and di-fullerenes embedded in conjugated polymers. - In: Carbon, ISSN 1873-3891, Bd. 77 (2014), S. 11-17
http://dx.doi.org/10.1016/j.carbon.2014.04.062
Hydrogen effects in ECR-etching of 3C-SiC(100) mesa structures. - In: Materials science forum, ISSN 1662-9752, Bd. 778/780 (2014), S. 730-733
http://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.730
Mechanical properties and residual stress of thin 3C-SiC(111) films determined using MEMS structures. - In: Materials science forum, ISSN 1662-9752, Bd. 778/780 (2014), S. 444-448
http://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.444
Localized collection of airborne analytes: a transport driven approach to improve the response time of existing gas sensor designs. - In: Advanced functional materials, ISSN 1616-3028, Bd. 24 (2014), 24, S. 3706-3714
http://dx.doi.org/10.1002/adfm.201303829
Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition. - In: Acta materialia, ISSN 1873-2453, Bd. 75 (2014), S. 219-226
http://dx.doi.org/10.1016/j.actamat.2014.04.057
Influence of thermal annealing on PCDTBT:PCBM composition profiles. - In: Advanced energy materials, ISSN 1614-6840, Bd. 4.2014, 5, 1300981
http://dx.doi.org/10.1002/aenm.201300981
Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001). - In: Physica status solidi. Current topics in solid state physics. - Berlin : Wiley-VCH, 2002-2017 , ISSN: 1610-1642 , ZDB-ID: 2102966-0, ISSN 1610-1642, Bd. 11 (2014), 2, S. 265-268
http://dx.doi.org/10.1002/pssc.201300292
Side gate AlGaN/GaN FET on silicon and sapphire. - In: Physica status solidi. Current topics in solid state physics. - Berlin : Wiley-VCH, 2002-2017 , ISSN: 1610-1642 , ZDB-ID: 2102966-0, ISSN 1610-1642, Bd. 11 (2014), 2, S. 280-283
http://dx.doi.org/10.1002/pssc.201300298
AlGaN based MEMS structures. - In: Physica status solidi, ISSN 1610-1642, Bd. 11 (2014), 2, S. 239-243
http://dx.doi.org/10.1002/pssc.201300153
Nanostructured plasma etched, magnetron sputtered nanolaminar Cr 2 AlC MAX phase thin films. - In: Applied surface science, Bd. 292 (2014), S. 997-1001
http://dx.doi.org/10.1016/j.apsusc.2013.12.099
Electrical gating and rectification in graphene three-terminal junctions. - In: Applied surface science, Bd. 291 (2014), S. 87-92
http://dx.doi.org/10.1016/j.apsusc.2013.09.066
Verspannungsanalyse mit Raman-Spektroskopie an MEMS aus Gruppe III-Nitriden. - In: Thüringer Werkstofftag 2013, (2013), S. 101-106
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FTIR-Ellipsometrie an Mischkristallen von Gruppe III-Nitriden. - In: Thüringer Werkstofftag 2013, (2013), S. 107-114
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Die Herstellung haftfester Metallschichten auf PMMA-Oberflächen. - In: Thüringer Werkstofftag 2013, (2013), S. 207-208
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Ermittlung mechanischer Eigenschaften neuer Materialien mittels freistehender Balkenstrukturen. - In: Thüringer Werkstofftag 2013, (2013), S. 209-210
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Ermittlung mechanischer Eigenschaften neuer Materialien mittels freistehender Balkenstrukturen. - In: Thüringer Werkstofftag 2013, (2013), S. 209-210
AlGaN/GaN three-terminal junction devices for rectification and transistor applications on 3C-SiC/Si pseudosubstrates. - In: IEEE transactions on electron devices, ISSN 1557-9646, Bd. 60 (2013), 10, S. 3047-3052
https://doi.org/10.1109/TED.2013.2265741
Effective localized collection and identification of airborne species through electrodynamic precipitation and SERS-based detection. - In: Nature Communications, ISSN 2041-1723, Bd. 4 (2013), 1636, S. 1-8
https://doi.org/10.1038/ncomms2590
Effective collection and detection of airborne species using SERS-based detection and localized electrodynamic precipitation. - In: Advanced materials, ISSN 1521-4095, Bd. 25 (2013), 26, S. 3554-3559
http://dx.doi.org/10.1002/adma.201300472
Growth of cubic GaN on 3C-SiC/Si (001) nanostructures. - In: Journal of crystal growth, Bd. 378 (2013), S. 291-294
http://dx.doi.org/10.1016/j.jcrysgro.2012.10.011
Synaptic behavior and STDP of asymmetric nanoscale memristors in biohybrid systems. - In: Nanoscale, ISSN 2040-3372, Bd. 5 (2013), 16, S. 7297-7303
https://doi.org/10.1039/C3NR01834B
AlGaN-based pH-sensors : impedance characterisation, optimisation and application for foetal blood sampling. - Ilmenau : Universitätsverlag Ilmenau, 2013. - Online-Ressource (PDF-Datei: XXVIII, 352 S., 5,67 MB) : Ilmenau, Techn. Univ., Diss., 2012
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Die fötale Mikroblutuntersuchung wird zur Überwachung der Sauerstoffversorgung von Föten während der Geburt eingesetzt. Mit herkömmlichen Blutgasanalysatoren kommt es allerdings immer wieder zu Schwierigkeiten da nur sehr geringe Mengen fötalen Blutes (wenige 10 myl) für die Untersuchung zur Verfügung stehen. Ionensensitiven Feldeffekttransistoren (ISFET) bieten durch ihre Miniaturisierbarkeit das Potential das benötigte Volumen wesentlich zu reduzieren. In der vorliegenden Arbeit wird die Grundlage für die Anwendung von Aluminium-Gallium-Nitrid(AlGaN)-basierten ISFETs für die fötale Mikroblutuntersuchung geschaffen. Dazu werden AlGaN/GaN-Heterostrukturen mit Metall- und Elektrolytkontakt impedanzspektroskopisch charakterisiert. Es wird gezeigt, dass das standardmäßig verwendete eindimensionale Ersatzschaltbild die zweidimensionale Verarmungscharakteristik des zweidimensionalen Elektronengases nicht ausreichend genau beschreibt. Daher wird ein erweitertes Ersatzschaltbild unter Verwendung von sogenannten "constant phase elements" hergeleitet und verifiziert. Auf Basis des neuen Ersatzschaltbildes werden Drifteinflüsse charakterisiert sowie die pH-Sensitivität der AlGaN-pH-Sensoren bestimmt. Neben der lichtinduzierten Drift durch persistente Photoleitung, kann auch eine langsame elektrochemische Korrosion des Sensors nachgewiesen werden. Für die Reduzierung der lichtinduzierten Drift wird die kontinuierliche Beleuchtung der Sensoren untersucht und eine deutliche Verkürzung der Driftdauer für rotes Licht festgestellt. Die Vergrößerung der Dicke der GaN-Deckschicht und die Reduzierung des Aluminiumgehalts in der AlGaN Barriereschicht erhöht nachweislich die Korrosionbeständigkeit der Sensoren.Unter Verwendung dieser Optimierungsschritte wird gezeigt, dass eine Genauigkeit von ±0.03pH für die pH-Wert-Bestimmung in verschiedenste wässrige Lösungen sowie für Nabelschnurblut erreicht werden kann. Die erzielten Ergebnisse werden für die Entwicklung eines Mikro-Blut-pH Analysators mit einem Minimal-Probenvolumen von nur 10myl verwendet, der die Genauigkeits- und Präzisionsanforderungen der Richtlinie der Bundesärtzekammer erfüllt. Im Rahmen dieser Arbeit wird damit erstmalig gezeigt, dass AlGaN-basierte pH-Sensoren für die genaue und präzise Bestimmung des pH-Wertes in komplexen biochemischen Flüssigkeiten wie z.B. Nabelschnurblut geeignet sind.
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SiC/Si pseudosubstrates for AlGaN nanoelectronic devices. - In: Silicon carbide and related materials 2012, (2013), S. 1119-1122
AlGaN/GaN based HEMTs on SiC/Si-substrates: influences on high frequency performance. - In: Silicon carbide and related materials 2012, (2013), S. 1115-1118
Properties of graphene side gate transistors. - In: Silicon carbide and related materials 2012, (2013), S. 1028-1031
Kinetic Monte Carlo simulation of impurity effects on nucleation and growth of SiC clusters on Si(100). - In: Silicon carbide and related materials 2012, (2013), S. 393-396
AlGaN solid solution grown on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Silicon carbide and related materials 2012, (2013), S. 103-106
N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy. - In: Journal of applied physics, ISSN 1089-7550, Bd. 113 (2013), 3, S. 033501, insges. 11 S.
https://doi.org/10.1063/1.4775736
Smooth ceramic titanium nitride contacts on AlGaN/GaN-heterostructures. - In: Semiconductor science and technology, ISSN 1361-6641, Bd. 27 (2012), 11, S. 115007, insges. 6 S.
http://dx.doi.org/10.1088/0268-1242/27/11/115007
Device concepts using two-dimensional electronic materials: graphene, MoS2, etc.. - In: IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2012, ISBN 978-1-4673-2472-4, (2012), insges. 4 S.
http://dx.doi.org/10.1109/ICSICT.2012.6467941
Side-gate graphene field-effect transistors with high transconductance. - In: Applied physics letters, ISSN 1077-3118, Bd. 101 (2012), 9, S. 093504, insges. 3 S.
We have fabricated epitaxial side-gate graphene field-effect transistors (FETs) with high transconductance. A side-gate graphene FET with 5560 nm2 active channel dimensions and a lateral gate-channel separation of 95 nm showing a high transconductance of 590 mS/mm is presented. An estimation of the electrostatic gate-channel capacitance of epitaxial side-gate graphene FETs shows that it is in the same order as the electrostatic gate capacitance of common top-gate graphene MOSFETs justifying the high transconductances of our devices. The results of the present paper demonstrate the potential of the side-gate architecture for graphene transistors.
http://dx.doi.org/10.1063/1.4748112
Multi-scale simulation of nucleation and growth of nanoscale SiC on Si . - In: Journal of computational and theoretical nanoscience, ISSN 1546-1963, Bd. 9 (2012), 11, S. 1941-1966
http://dx.doi.org/10.1166/jctn.2012.2601
Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems. - In: The philosophical magazine: a journal of theoretical experimental and applied physics, ISSN 1941-5869, Bd. 92 (2012), 25/27, S. 3392-3401
https://doi.org/10.1080/14786435.2012.669074
BioMEMS for processing and testing of hydrogel-based bio-interfaces. - In: Biomedical engineering, ISSN 1862-278X, Bd. 57.2012, Suppl. 1, Track-E, S. 415-417
https://doi.org/10.1515/bmt-2012-4354
Segmented flow microfluidics in multilumen tubing. - In: Biomedical engineering, ISSN 1862-278X, Bd. 57.2012, Suppl. 1, Track-E, S. 926
https://doi.org/10.1515/bmt-2012-4360
Mechanical properties of cubic SiC, GaN and AlN thin films. - In: Materials science forum, ISSN 1662-9752, Bd. 717/720 (2012), S. 513-516
http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.513
T- and Y-branched three-terminal junction graphene devices. - In: Materials science forum, ISSN 1662-9752, Bd. 717/720 (2012), S. 683-686
http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.683
ECR-etching of submicron and nanometer sized 3C-SiC(100) mesa structures. - In: Materials science forum, ISSN 1662-9752, Bd. 717/720 (2012), S. 901-904
http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.901
Forisome performance in artificial sieve tubes. - In: Plant, cell & environment, ISSN 1365-3040, Bd. 35 (2012), 8, S. 1419-1427
http://dx.doi.org/10.1111/j.1365-3040.2012.02499.x
Graphene field effect transistor improvement by graphene-silicon dioxide interface modification. - In: Physica. Low-dimensional systems & nanostructures. - Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998- , ISSN: 1386-9477 , ZDB-ID: 1466595-5, ISSN 1386-9477, Bd. 44 (2012), 6, S. 985-988
http://dx.doi.org/10.1016/j.physe.2011.05.008
Epitaxial growth and characterization of InN and GaN on C-face SiC(111)/Si(111). - In: 75th Annual Meeting of the DPG and combined DPG Spring Meeting of the Condensed Matter Section and the Section AMOP, 2011, HL 44.27
Intrinsic voltage rectification in a graphene nano device. - In: 75th Annual Meeting of the DPG and combined DPG Spring Meeting of the Condensed Matter Section and the Section AMOP, 2011, O 60.55
Some aspects of quantitative analysis of ternary alloys of group III-nitrides by Auger electron spectroscopy. - In: Journal of electrical engineering, ISSN 1339-309X, Bd. 62 (2011), 6, S. 367-369
Richtiger Name des 3. Verfassers: Gernot Ecke
https://doi.org/10.2478/v10187-011-0059-2
Quantitative evaluation of strain in epitaxial 2H-AlN layers. - In: Advances in innovative materials and applications, (2011), S. 213-216
Polarity control of CVD grown 3C-SiC on Si(111). - In: Materials science forum, ISSN 1662-9752, Bd. 679/680 (2011), S. 91-94
http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.91
Side gate graphene and AlGaN/GaN unipolar nanoelectronic devices. - In: Advances in innovative materials and applications, (2011), S. 427-430
Defect interactions and polytype transitions. - In: Advances in innovative materials and applications, (2011), S. 217-220
ESR and LESR X-band study of morphology and charge carrier interaction in blended P3HT-SWCNT and P3HT-PCBM-SWCNT solid thin films. - In: Synthetic metals, Bd. 161 (2011), 21/22, S. 2241-2248
http://dx.doi.org/10.1016/j.synthmet.2011.08.027
AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications. - In: Thin solid films, ISSN 1879-2731, Bd. 520 (2011), 1, S. 491-496
http://dx.doi.org/10.1016/j.tsf.2011.07.003
Epitaxial graphene three-terminal junctions. - In: Applied physics letters, ISSN 1077-3118, Bd. 99 (2011), 17, S. 173111, insges. 3 S.
http://dx.doi.org/10.1063/1.3653469
Vertical design of cubic GaN-based high electron mobility transistors. - In: Journal of applied physics, ISSN 1089-7550, Bd. 110 (2011), 11, 114501, insges. 8 S.
https://doi.org/10.1063/1.3663364
High temperature graphene formation on capped and uncapped SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 679/680 (2011), S. 785-788
http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.785
Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates. - In: Diamond and related materials, ISSN 0925-9635, Bd. 20 (2011), 5/6, S. 717-721
http://dx.doi.org/10.1016/j.diamond.2011.03.006
Black luminescent silicon. - In: Physica status solidi. Current topics in solid state physics. - Berlin : Wiley-VCH, 2002-2017 , ISSN: 1610-1642 , ZDB-ID: 2102966-0, ISSN 1610-1642, Bd. 8 (2011), 3, S. 1021-1026
http://dx.doi.org/10.1002/pssc.201000388
Schichten über Schichten : innovative Beschichtungen für komplexe Anwendungen. - In: Vakuum in Forschung und Praxis, ISSN 1522-2454, Bd. 23 (2011), 3, S. 24-32
http://dx.doi.org/10.1002/vipr.201100457
Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 208 (2011), 2, S. 357-376
http://dx.doi.org/10.1002/pssa.201026343
Optical anisotropy of a- and m-plane InN grown on free-standing GaN substrates. - In: DPG Spring Meeting of the Condensed Matter Section with the divisions: Biological Physics, Chemical and Polymer Physics, Crystallography, Dielectric Solids, Dynamics and Statistical Physics, Low Temperature Physics, Magnetism, Metal and Material Physics, Physics of Socio-Economic Systems, Radiation and Medical Physics, Semiconductor Physics, Surface Science, Thin Films, Vacuum Science and Technology as well as the working group: Industry and Business, 2010, HL 56.1
Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization. - In: Journal of electrical engineering, ISSN 1339-309X, Bd. 61 (2010), 6, S. 378-381
https://doi.org/10.2478/v10187-010-0058-8
UV-source assisted GaN wet etching. - In: Programme and book of abstracts, ISBN 978-80-7399969-8, (2010), S. 61
Cubic AlGaN/GaN hetero-field effect transistors with normally on and normally off operation. - In: III-Nitride materials for sensing, energy conversion and controlled light-matter interactions, ISBN 978-1-605-11175-9, (2010), S. 107-112
FTIR ellipsometry of SiC heterostructures. - In: AIP conference proceedings, ISSN 1551-7616, Bd. 1292 (2010), S. 83-86
http://dx.doi.org/10.1063/1.3518318
AlGaN/GaN based heterostructures for MEMS and NEMS applications. - In: Solid state phenomena, ISSN 1662-9779, Bd. 159 (2010), S. 27-38
http://dx.doi.org/10.4028/www.scientific.net/SSP.159.27
Elastic properties of nanowires. - In: Physica status solidi, ISSN 1521-3951, Bd. 247 (2010), 10, S. 2557-2570
http://dx.doi.org/10.1002/pssb.201046378
Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators. - In: Physica status solidi. Current topics in solid state physics. - Berlin : Wiley-VCH, 2002-2017 , ISSN: 1610-1642 , ZDB-ID: 2102966-0, ISSN 1610-1642, Bd. 7 (2010), 7/8, S. 1829-1831
http://dx.doi.org/10.1002/pssc.200983616
Silizium-Nanoresonatoren. - In: Sensoren und Messsysteme 2010, (2010), S. 330-333
Mikrostrukturierungstechniken zur Herstellung von MEMS aus Halbleitern großer Bandlücke. - Ilmenau : Univ.-Verl. Ilmenau, 2010. - Online-Ressource (PDF-Datei: 200 S., 23,50 MB) : Ilmenau, Techn. Univ., Diss., 2009
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Die Erweiterung des Anwendungsspektrums Mikroelektromechanischer Systeme (MEMS) um das Einsatzgebiet der chemischen, biologischen, gasartspezifischen und mikrofluidischen Sensoren stellt hohe Anforderungen an Stabilität (chemisch und mechanisch), Biokompatibilität, Miniaturisier- und Integrierbarkeit der verwendeten Materialien. Trotz der für diese Sensoren vorteilhaften Materialeigenschaften von Gruppe III-Nitriden gibt es bis heute nur eine beschränkte Anzahl von Forschergruppen, die sich mit der Prozessierung von MEMS auf Basis von GaN bzw. AlGaN/GaN-Heterostrukturen beschäftigen. Eine Hauptursache besteht vor allem in der aufwendigen Strukturierung dieser chemisch hoch stabilen Materialien. Die vorliegende Arbeit widmet sich daher der Entwicklung von Strukturierungstechniken zur Herstellung von MEMS aus Halbleitern großer Bandlücke mit einem besonderen Fokus auf nass- und trockenchemische Ätzverfahren. Diese sollen dazu verwendet werden, AlGaN/GaN-Resonatoren auf Si- und 4H-SiC-Substraten, sowie 3C-SiC/Si- und AlN/Saphir-Pseudosubstraten zu realisieren. Dabei wird das zweidimensionale Elektronengas (2DEG), welches sich an der Grenzfläche der AlGaN/GaN-Heterostruktur ausbildet, als Rückelektrode zur piezoelektrischen Anregung genutzt. Das entwickelte Technologiepaket vermeidet daher eine negative Beeinflussung der 2DEG-Rückelektrode und somit gleichzeitig der Funktionalität der MEMS. Zuletzt konnte die Funktionalität der so gefertigten piezoelektrisch angeregten AlGaN/GaN-Resonatoren nachgewiesen und zusätzlich die uniaxiale Verspannung der freigelegten AlGaN/GaN-Schichten auf den unterschiedlichen Substraten unter Anwendung einer Resonanzfrequenzanalyse ermittelt werden.
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Structural characterization of sputtered indium oxide films deposited at room temperature. - In: Thin solid films, ISSN 1879-2731, Bd. 518 (2010), 16, S. 4508-4511
http://dx.doi.org/10.1016/j.tsf.2009.12.018
Optical properties of InN grown on Si(111) substrate. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 207 (2010), 5, S. 1066-1069
http://dx.doi.org/10.1002/pssa.200983102
Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling. - In: Bulletin of the Russian Academy of Sciences. Physics. - New York, NY : Allerton Press, 2007- , ISSN: 1934-9432 , ZDB-ID: 2403169-0, ISSN 1934-9432, Bd. 74 (2010), 2, S. 241-244
http://dx.doi.org/10.3103/S1062873810020292
Ambient and temperature dependent electric properties of backgate graphene transistors. - In: Physica status solidi. Basic solid state physics. - Weinheim : Wiley-VCH, [1971]- , ISSN: 1521-3951 , ZDB-ID: 1481096-7, ISSN 1521-3951, Bd. 247 (2010), 4, S. 903-906
http://dx.doi.org/10.1002/pssb.200982958
Tuning residual stress in 3C-SiC(100) on Si(100). - In: Materials science forum, ISSN 1662-9752, Bd. 645/648 (2010), S. 159-162
http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.159
Nanostructuring techniques for 3C-SiC(100) NEMS structures. - In: Materials science forum, ISSN 1662-9752, Bd. 645/648 (2010), S. 841-844
http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.841
Temperature facilitated ECR-etching for isotropic SiC structuring. - In: Materials science forum, ISSN 1662-9752, Bd. 645/648 (2010), S. 849-852
http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.849
2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) substrates. - In: Materials science forum, ISSN 1662-9752, Bd. 645/648 (2010), S. 1219-1222
http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.1219
Property modification of 3C-SiC MEMS on Ge-modified Si(100) substrates. - In: Materials science forum, ISSN 1662-9752, Bd. 645/648 (2010), S. 861-864
http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.861
Piezoelektrisch angeregte MEMS aus epitaktischen AlGaN/GaN-Heterostrukturen. - In: Thüringer Werkstofftag 2010, (2010), S. 85-90
Parallel als Druckausg. erschienen
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Graphenprozessierung für Transistoren: materialanalytische Fragestellungen. - In: Thüringer Werkstofftag 2010, (2010), S. 91-98
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Grenzflächenmodifikation und Eigenschaften in Heterostrukturen mit großer Gitterfehlpassung. - In: Thüringer Werkstofftag 2010, (2010), S. 99-104
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AlGaN/GaN-Schichtsysteme für piezoelektrisch angeregte Resonatoren. - Ilmenau : Univ.-Verl. Ilmenau, 2010. - Online-Ressource (PDF-Datei: 192 S., 15,02 MB) : Ilmenau, Techn. Univ., Diss., 2009
Enth. außerdem: Thesen
Auf Grund der gestiegenen Anforderungen für mikroelektromechanische Systeme (MEMS) hinsichtlich Stabilität, Miniaturisier- und Integrierbarkeit, steigt das Interesse an neuen Materialsystemen wie den Halbleitern großer Bandlücke. Die vorliegende Arbeit gliedert sich in zwei Schwerpunkte, die für die Herstellung GaN-basierter MEMS bewältigt werden mussten: zum Einen wurde das Wachstum auf selektiv zu GaN ätzbaren Substraten untersucht. In der vorliegenden Arbeit werden drei Substrate vorgestellt, welche sowohl das epitaktische Wachstum von GaN als auch das Freistellen der Struktur erlauben. Dazu gehört die Verwendung von 4H-SiC als Substrat, welches sich kürzlich als isotrop ätzbar erwiesen hat. Als zweites wird das epitaktische GaN-Wachstum auf nanokristallinen, gesputterten AlN-Opferschichten gezeigt, welches die MEMS-Herstellung auf Saphir ermöglicht. Im letzten Fall erfolgt das Wachstum auf Siliziumsubstraten mit Hilfe einer 3C-SiC-Zwischenschicht. Die piezoelektrischen Eigenschaften von (GaN/)AlGaN/GaN-Heterostrukturen standen im zweiten Schwerpunkt im Fokus. Dabei dient die AlGaN-Schicht und in einigen Fällen eine zusätzliche GaN-Deckschicht als piezoelektrisch aktive Schicht. Das hochleitfähige 2D Elektronengas (2DEG) an der unteren AlGaN/GaN-Grenzfläche stellt dabei die zur Anregung benötige Rückelektrode zur Verfügung. Mit Hilfe der Elektroreflexion konnte die elektrische Feldverteilung in Abhängigkeit von der angelegten elektrischen Spannung bestimmt werden. In Kombination mit der Piezokraftmikroskopie, bei welcher die spannungsabhängige Auslenkung der Schichten untersucht wurde, konnte das piezoelektrische Modul d33 für Al0.31Ga0.69N zuverlässig mit 5 pm/V bestimmt werden. Die Prozessierung der ersten GaN-basierten MEMS wird schließlich auf allen drei zuvor eingeführten Substraten vorgestellt, das Schwingungsverhalten für die piezoelektrische Anregung von Transversalschwingungen mit Hilfe von Vibrometermessungen sowie das rein elektrische Auslesen von Longitudinalschwingungen (ebenfalls für piezoelektrische Anregung) demonstriert
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Designing the Si(100) conversion into SiC(100) by Ge. - In: Physica status solidi, ISSN 1610-1642, Bd. 7 (2010), 2, S. 141-144
https://doi.org/10.1002/pssc.200982448
Top gated graphene transistors with different gate insulators. - In: Physica status solidi, ISSN 1610-1642, Bd. 7 (2010), 2, S. 390-393
https://doi.org/10.1002/pssc.200982440
Contribution to the quantitative analysis of ternary alloys of group III-nitrides by Auger spectroscopy. - In: Journal of electrical engineering, ISSN 1339-309X, Bd. 61 (2010), 1, S. 62-64
Richtiger Name des 2. Verfassers: Gernot Ecke
https://doi.org/10.2478/v10187-010-0009-4
Resonant MEMS based on cubic GaN layers. - In: Physica status solidi. Current topics in solid state physics. - Berlin : Wiley-VCH, 2002-2017 , ISSN: 1610-1642 , ZDB-ID: 2102966-0, ISSN 1610-1642, Bd. 7 (2010), 1, S. 116-119
http://dx.doi.org/10.1002/pssc.200982613
InN nanocolumns. - In: Indium nitride and related alloys, (2010), S. 599-615
Transport properties of InN. - In: Indium nitride and related alloys, (2010), S. 139-179
UV electrodeless wet chemical etching of n-GaN. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2009), insges. 4 S.
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Nanostructured indium oxide thin films deposited at room temperature. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2009), insges. 4 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=14795
Comparing the ISFET to the glass electrode: advantages, challenges and similarities. - In: Chemical analysis, ISSN 0009-2223, Bd. 54 (2009), 6, S. 1121-1148
Buckling stabilization and stress reduction in SiC on Si by i-FLASiC processing. - In: Materials science forum, ISSN 1662-9752, Bd. 600/603 (2009), S. 239-242
http://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.239
Performance modification of SiC MEMS. - In: Silicon carbide and related materials 2008, (2009), S. 621-624
http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.621
Composition and interface chemistry dependence in Ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions. - In: Silicon carbide and related materials 2008, (2009), S. 951-954
http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.951
SIMS investigation of Ge x(4H-SiC) 1-x solid solutions synthesized by Ge-ion implantation up to x=0.2. - In: Silicon carbide and related materials 2008, (2009), S. 465-468
http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.465
Formation of different carbon phases on SiC. - In: Silicon carbide and related materials 2008, (2009), S. 227-230
http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.227
Properties of surface and interface structure of AlN/3CSiC/Ge/Si (1 1 1) heterostructure. - In: Journal of crystal growth, Bd. 311 (2009), 23/24, S. 4665-4669
http://dx.doi.org/10.1016/j.jcrysgro.2009.08.034
Polarity determination and control of SiC grown on Si. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 165 (2009), 1/2, S. 28-33
http://dx.doi.org/10.1016/j.mseb.2009.03.015
Comparative study of 3C-GaN grown on semi-insulating 3C-SiC/Si(100) substrates. - In: Silicon carbide and related materials 2008, (2009), S. 943-946
http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.943
Structure and lattice location of Ge implanted 4H-SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 600/603 (2009), S. 623-626
http://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.623
Isotropic etching of SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 600/603 (2009), S. 651-654
http://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.651
Determination of the composition of In x Ga 1-x N from strain measurements. - In: Acta materialia, ISSN 1873-2453, Bd. 57 (2009), 19, S. 5681-5692
http://dx.doi.org/10.1016/j.actamat.2009.07.063
Graphene as FET channel material - what are the benefits?. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2009), S. 223-224
Multifunktionale Nanoanalytik für eine Nanopositionier-und Messmaschine, 2009. - Online-Ressource (PDF-Datei: II, 113 Bl., 5,17 MB) : Ilmenau, Techn. Univ., Diss., 2009
Enth. außerdem: Thesen
Der stetige Fortschritt der Herstellungsverfahrem von Nanoobjekten benötigt eine zeitgleiche Weiterentwicklung von Mess- und Analyseverfahren, die eine Qualitätssicherung und ein ungehindertes Vorstoßen in den Nanometerbereich zulassen bzw. unterstützen. Nur mithilfe geeigneter Werkzeuge und Analysetechniken können Objekte des Nanometerbereiches hergestellt, manipuliert, vermessen und visualisiert werden. Die von der Technischen Universität Ilmenau im Rahmen eines Sonderforschungsbereichs entwickelte Nanopositionier- und Nanomessmaschine (NPM-Maschine) mit einem Messvolumen von 25 × 25 × 5 mm3 stellt ein Werkzeug genau für diese Analyseaufgaben im nanoskaligen Bereich dar. In dieser Arbeit wird die Integration verschiedener Analysetechniken in die NPM-Maschine gezeigt, um ein möglichst breites Anwendungsspektrum dieser Maschine zu erreichen. Neben der Entwicklung und Analyse, der für die Positionierunsicherheit benötigten Referenzstrukturen, werden in dieser Arbeit auch Messverfahren auf AFM-Basis zur Integration in die NPM-Maschine untersucht. Verschiedenartige Nanomessverfahren, insbesondere verschiedenen Modi der AFM-Technik, die zur Bestätigung und zur Analyse der Ergebnisse benutzt wurden, werden vorgestellt, wobei der Schwerpunkt auf Verfahren liegt, die sich für eine Integration in die NPM-Maschine eignen. Hierbei werden verschiedene Modi der AFM-Technik vorgestellt, die dafür geeignet sind.Anhand von Beispielmessungen werden die folgenden AFM-Sondermodi vorgestellt: die Kelvinsonden-Kraftmikroskopie (KPFM), die Magnetkraftmikroskopie (MFM), die Piezoelektrische Kraftmikroskopie (PFM) und die Spektroskopie mit dem AFM. Auf die Notwendigkeit von Referenzstrukturen zur Referenzierung wird ebenso eingegangen wie auf die Herstellung solcher Strukturen.
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Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices. - In: ACS applied materials & interfaces, ISSN 1944-8252, Bd. 1 (2009), 7, S. 1451-1456
http://dx.doi.org/10.1021/am900138f
Parameter identification of piezoelectric AlGaN/GaN beam resonators by dynamic measurements. - In: 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2009, ISBN 978-1-4244-4161-7, (2009), insges. 4 S.
http://dx.doi.org/10.1109/ESIME.2009.4938498
Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures. - In: Journal of applied physics, ISSN 1089-7550, Bd. 106 (2009), 2, 023715, insges. 5 S.
https://doi.org/10.1063/1.3174441
Resonant piezoelectric ALGaN/GaN MEMS sensors in longitudinal mode operation. - In: IEEE 22nd International Conference on Micro Electro Mechanical Systems, 2009, ISBN 978-1-4244-2977-6, (2009), S. 927-930
http://dx.doi.org/10.1109/MEMSYS.2009.4805536
Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 267 (2009), 8/9, S. 1269-1272
http://dx.doi.org/10.1016/j.nimb.2009.01.143
SiC polytype stability influenced by Ge impurities. - In: Silicon carbide and related materials 2007, (2009), S. 533-536
Structure of cubic polytype indium nitride layers on top of modified sapphire substrates. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 2, S. 514-517
The occurrence of cubic indium nitride thin layers grown by molecular beam epitaxy on top of c-plane sapphire substrates modified by an intermediate layer of cubic indium oxide is reported. An orientation relationship between the (0001) plane of Al2O3 and both (001) surfaces of body-centered cubic In2O3 and zinc-blende InN is demonstrated by means of electron and X-ray diffraction and by transmission electron microscopy. We propose that the demonstrated approach is able to stabilize the non equilibrium phase of InN (i. e., the cubic polytype) due to a low lattice mismatch together with a four fold surface atomic arrangement of the indium oxide-indium nitride interface.
https://doi.org/10.1002/pssc.200777472
Bioreactor with integrated nanosensor for the recording of extracellular potential of nerve cells: response to inhibitors record with AlGaN/GaN field - effect transistor. - In: Life sciences, medicine, and bio materials, ISBN 978-1-420-08504-4, (2008), S. 566-568
Growth and characterization of indium oxide films for ozone detection. - In: Prospects in mechanical engineering, (2008), insges. 11 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=18741
Multimode frequency response of piezoelectric AlGaN/GaN micro-electromechanical RF resonators. - In: Technical digest, (2008), S. 165-168
Study of microstructure and strain relaxation on thin InXGa1-xN epilayers with medium and high In contents. - In: Materials science, ISBN 978-3-540-85225-4, (2008), S. 77-78
Polarization induced effects in GaN-based heterostructures and novel sensors. - In: Polarization effects in semiconductors, (2008), S. 27-109
Lattice location determination of Ge in SiC by ALCHEMI. - In: Microscopy of semiconducting materials 2007, (2008), S. 353-358
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication. - In: Conference on Optoelectronic and Microelectronic Materials and Devices, 2008, ISBN 978-1-4244-2716-1, (2008), S. 26-29
http://dx.doi.org/10.1109/COMMAD.2008.4802084
Hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition. - In: International Conference on Advanced Semiconductor Devices and Microsystems, 2008, ISBN 978-1-4244-2326-2, (2008), S. 127-130
http://dx.doi.org/10.1109/ASDAM.2008.4743297
PECVD silicon carbon nitrid thin films: properties. - In: International Conference on Advanced Semiconductor Devices and Microsystems, 2008, ISBN 978-1-4244-2326-2, (2008), S. 291-294
http://dx.doi.org/10.1109/ASDAM.2008.4743340
Detektion von inhibitorischen Effekten auf Nervenzellen mit Aluminium-Galliumnitrid/Galliumnitrid Sensoren. - In: 2. Dresdner Medizintechnik-Symposium - Innovation durch Einheit von Therapie und Monitoring, (2008), S. 78-83
Richtiger Name des Verf.: Florentina Niebelschütz
Investigation of NiOx-based contacts on p-GaN. - In: Journal of materials science. . - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990- , ISSN: 1573-482X , ZDB-ID: 2016994-2, ISSN 1573-482X, Bd. 19 (2008), 8/9, S. 855-862
http://dx.doi.org/10.1007/s10854-007-9520-1
Novel III-nitride based transparent photodetectors for standing wave interferometry. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 205 (2008), 8, S. 2080-2084
http://dx.doi.org/10.1002/pssa.200778888
Integration of thin-film-fracture-based nanowires into microchip fabrication. - In: Small, ISSN 1613-6829, Bd. 4 (2008), 12, S. 2214-2221
http://dx.doi.org/10.1002/smll.200800228
Structural and photoconducting properties of MBE and MOCVD grown III-nitride double-heterostructures. - In: Materials and devices for laser remote sensing and optical communication, ISBN 978-1-60511-046-2, (2008), S. 155-161
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide. - In: Crystal growth & design, ISSN 1528-7505, Bd. 8 (2008), 4, S. 1257-1260
http://dx.doi.org/10.1021/cg700910n
Surface morphology of Ge-modified 3C-SiC/Si films. - In: Surface and interface analysis, ISSN 1096-9918, Bd. 40 (2008), 9, S. 1310-1317
http://dx.doi.org/10.1002/sia.2895
Buried melting in germanium implanted silicon by millisecond flash lamp annealing. - In: Applied physics letters, ISSN 1077-3118, Bd. 93 (2008), 15, S. 151903, insges. 3 S.
http://dx.doi.org/10.1063/1.2993332
Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method. - In: Technical physics, ISSN 1090-6525, Bd. 53 (2008), 11, S. 1490-1503
http://dx.doi.org/10.1134/S1063784208110157
Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators. - In: Applied physics letters, ISSN 1077-3118, Bd. 93 (2008), 17, S. 173504, insges. 3 S.
http://dx.doi.org/10.1063/1.3002296
Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBE. - In: Physica status solidi, ISSN 1862-6270, Bd. 2 (2008), 5, S. 212-214
http://dx.doi.org/10.1002/pssr.200802146
Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures. - In: Journal of applied physics, ISSN 1089-7550, Bd. 104 (2008), 8, 084516, insges. 8 S.
https://doi.org/10.1063/1.3005885
SiC polytypes process affected by Ge predeposition on Si(111) substrates. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 44 (2008), 2, S. 191-196
http://dx.doi.org/10.1016/j.spmi.2008.06.001
Wide band gap materials and devices for NOx, H2 and O2 gas sensing applications, 2008. - Online-Ressource (PDF-Datei: 275 S., 7948 KB) Ilmenau : Techn. Univ., Diss., 2008
Enth. außerdem: Thesen
Im Rahmen dieser Arbeit sind Feldeffektgassensoren (Schottky Dioden, MOS Kapazitäten, und MOSFET Transistoren) auf der Basis von Halbleitern mit großer Bandlücke (Siliziumkarbid (SiC) und Gallium Nitrid (GaN), sowie resistive Gassensoren, die auf aktiven Indiumoxid-Schichten (In2O3) basieren, für die Detektion von reduzierenden Gasen (H2, D2) und oxidierenden Gasen (NOx, O2), entwickelt worden. Die Entwicklung der Sensoren ist am Institut für Mikro- und Nanoelektronik der Technischen Universität Ilmenau in Zusammenarbeit mit General Electric (GE) Global Research (USA) und der Umwelt- und Sensortechnik GmbH (Geschwenda) durchgeführt worden. Kapitel 1: dient als eine Einführung in das mit dieser Arbeit verbundene wissenschaftliche Feld. Die theoretischen Grundlagen der Festkörper-Gassensoren werden dargestellt. Zusätzlich werden in diesem Kapitel die relevanten Eigenschaften der Materialien mit großer Bandlücke (SiC und GaN) präsentiert. Kapitel 2: Pt/GaN Schottky Dioden mit verschiedener Dicke des katalytischen Metalls werden als Wasserstoffgasdetektoren vorgestellt. Die Fläche sowie die Dicke von Pt-gates wurden zwischen 250 × 250 ?m2 und 1000 × 1000 ?m2, 8 und 40 nm, systematisch variiert. Die Sensorantwort (Sensorsreaktion) auf 1 vol.% Wasserstoff in synthetischer Luft wurde in Abhängigkeit von der aktiven Fläche, der Pt-Dicke, und der Betriebstemperatur untersucht. Durch Anheben der Betriebstemperatur auf ca. 350˚C und durch Reduzierung der Dicke des Pt auf 8 nm beobachteten wir eine beträchtliche Erhöhung der Empfindlichkeit sowie eine Verkürzung der Ansprech- und Erholzeiten. Untersuchungen am Elektronenmikroskop zeigten, dass das dünnere Platin eine höhere Korngrenzendichte aufwies. Die Erhöhung der Empfindlichkeit gemeinsam mit der Reduzierung der Dicke des Pt deuten auf die Dissoziierung von molekularem Wasserstoff an der Oberfläche, die Diffusion atomaren Wasserstoffs entlang der Korngrenzen des Platins und die Adsorption von Wasserstoff an der Pt/GaN Grenzfläche als ein möglicher Mechanismus der Detektion von Wasserstoff durch Schottky Dioden hin. Die Reaktion auf D2, NOx, and O2 von Metall-Oxid-Halbleiter (MOS) Strukturen mit Rhodium Schottky-Kontakten mit einer Dicke von 30 nm in Abhängigkeit von der Betriebstemperatur und der Gaspartialdrücke wurde in Kapitel 3 untersucht. Die Reaktion dieses Gates wurde als Verschiebung entlang der Spannungsachse in der Kapazität-Spannungs Kurve (C-V) nachgewiesen. Posi...
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A novel GaN-based multiparameter sensor system for biochemical analysis. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 6, S. 2361-2363
http://dx.doi.org/10.1002/pssc.200778726
Ultra-thin InGaN photodetectors for standing wave interferometry. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 6, S. 2117-2119
http://dx.doi.org/10.1002/pssc.200778467
GaN-basierte pH-Sensoren : Empfindlichkeit, Drift und Passivierungstechnologien, 2008. - Online-Ressource (PDF-Datei: 148 S., 29,3 MB) : Ilmenau, Techn. Univ., Diss., 2008
Enth. außerdem: Thesen
In der vorliegenden Arbeit werden Heterostrukturen aus Aluminium-Gallium-Nitrid (AlGaN) und Gallium-Nitrid (GaN) als pH-Sensoren prozessiert, charakterisiert und optimiert. Dabei werden Untersuchungen zur pH-Empfindlichkeit, zum Driftverhalten der Sensoren und zu Passivierungstechnologien für industrielle Applikationen durchgeführt. Seit Anfang der 70-iger Jahre gibt es das Konzept der pH-Messung durch ionensensitive Feldeffekttransistoren (ISFETs) auf Silizium-Basis. Vorteil dieser Bauelemente ist die Miniaturisierbarkeit der Sensoren. Als nachteilig erweist sich die geringe chemische Stabilität der Sensoroberflächen und die damit verbundene geringe Langzeitstabilität und Drift. pH-Sensoren aus AlGaN/GaN-Heterostrukturen bieten eine vorteilhafte Alternative zu den Si-basierten ISFETs auf Grund ihrer besonderen Materialeigenschaften. Die vorliegende Arbeit beschäftigt sich mit der Charakterisierung und Optimierung der pH-Sensoren. Dabei stehen Untersuchungen der Empfindlichkeit und vor allem der lichtinduzierten Drift dieser Bauelemente im Vordergrund. Wechselnde Beleuchtungsverhältnisse, wie sie bei industriellen Applikationen auftreten, führen zu Driftphänomenen mit großen Zeitkonstanten. Die Reduzierung dieser Drift und die Erhöhung der Lichtunempfindlichkeit der Sensorstrukturen werden mit verschiedenen Lösungsansätzen und Verfahren bearbeitet. Dabei kommen sowohl technologische Verbesserungen der Halbleiterstrukturen als auch Varianten der Verschaltung von mehreren Sensorelementen und einer kontinuierlichen Bias-Beleuchtung zum Einsatz. Weiterhin werden in dieser Arbeit verschiedene Passivierungstechnologien untersucht und auf ihre Eignung bezüglich der chemischen Stabilität in industriellen Reinigungsprozessen geprüft. Im Rahmen dieser Experimente wurden Dickschichtverfahren zur Passivierung von GaN-basierten Sensoren mit Keramiken und Glasuren eingesetzt und weitere alternative Verfahren untersucht. Das große Potential des Materialsystems der Gruppe-III Nitride für pH-Messungen und biosensorische Anwendungen wird in dieser Arbeit erschlossen und bestimmte Eigenschaften der Sensoren entscheidend optimiert.
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http://dx.doi.org/10.1016/j.spmi.2006.06.005
Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 612-618
http://dx.doi.org/10.1016/j.spmi.2006.07.030
Carbon surface diffusion and SiC nanocluster self-ordering. - In: Nuclear instruments & methods in physics research, Bd. 253 (2006), 1/2, S. 241-245
http://dx.doi.org/10.1016/j.nimb.2006.10.058
Impact of silicon incorporation on the formation of structural defects in AlN. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 11, 113531, insges. 9 S.
https://doi.org/10.1063/1.2363239
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 289-294
http://dx.doi.org/10.1016/j.spmi.2006.07.006
Piezoelectric properties of polycrystalline AlN thin films for MEMS application. - In: Sensors and actuators. Physical. - Amsterdam [u.a.] : Elsevier Science, 1990- , ISSN: 1873-3069 , ZDB-ID: 1500729-7, ISSN 1873-3069, Bd. 132 (2006), 2, S. 658-663
http://dx.doi.org/10.1016/j.sna.2006.03.001
Tuning of electrical properties of In x O y thin films grown by MOCVD for different applications. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 945-946
http://dx.doi.org/10.1002/mawe.200600079
Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 937-940
http://dx.doi.org/10.1002/mawe.200600083
Origin of n-type conductivity in nominally undoped InN. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 924-928
http://dx.doi.org/10.1002/mawe.200600082
Einfluss von Prozessen der Bauelementtechnologie auf die Oberflächeneigenschaften und die Biokompatibilität von Gruppe III-Nitrid-basierenden Sensoren :
Impact of device technology processes on the surface properties and biocompatibility of group III nitride based sensors. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 919-923
http://dx.doi.org/10.1002/mawe.200600078
Atomic layer epitaxy of (Si1-xC1-y)Gex+y layers on 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 1559-1562
Micromachining of novel SiC on Si structures for device and sensor applications. - In: Silicon carbide and related materials - 2005, (2006), S. 1111-1114
High dose high temperature ion implantation of Ge into 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 851-854
Low energy ion modification of 3C-SiC surfaces. - In: Silicon carbide and related materials - 2005, (2006), S. 685-688
Multi-scale simulation of MBE-grown SiC/Si nanostructures. - In: Silicon carbide and related materials - 2005, (2006), S. 315-318
Growth acceleration in FLASiC assisted short time liquid phase epitaxy by melt modification. - In: Silicon carbide and related materials - 2005, (2006), S. 295-298
Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts. - In: Silicon carbide and related materials - 2005, (2006), S. 275-278
Simulation of quality of SiC/Si interface during MBE deposition of C on Si. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 929-932
http://dx.doi.org/10.1002/mawe.200600080
Effect of dislocations on electrical and electron transport properties of InN thin films : II. density and mobility of the carriers. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 9, 094903, insges. 8 S.
https://doi.org/10.1063/1.2363234
Effect of dislocations on electrical and electron transport properties of InN thin films : I. strain relief and formation of a dislocation network. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 9, 094902, insges. 13 S.
https://doi.org/10.1063/1.2363233
Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering. - In: Applied surface science, Bd. 253 (2006), 1, S. 405-408
http://dx.doi.org/10.1016/j.apsusc.2006.06.023
Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 74 (2006), 15, S. 155209, insges. 11 S.
http://dx.doi.org/10.1103/PhysRevB.74.155209
"Anomalous" pseudodielectric function of GaN: experiment, modelling and application to the study of surface properties. - In: Applied surface science, Bd. 253 (2006), 1, S. 224-227
http://dx.doi.org/10.1016/j.apsusc.2006.05.108
Tribological characteristics of tungsten carbide films. - In: Festschrift zum Ehrenkolloquium anlässlich der Emeritierung von Univ.-Prof. Dr.-Ing. habil. Dr. rer. nat. Christian Knedlik, (2006), S. 18-19
Effects of solvent and annealing on the improved performance of solar cells based on poly (3-hexylthiophene):fullerene. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), S. 317-318
Heteropolytype and low dimensional structures in SiC. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), S. 263-264
Model for the thickness dependence of electron concentration in InN films. - In: Applied physics letters, ISSN 1077-3118, Bd. 89 (2006), 17, S. 172109, insges. 3 S.
http://dx.doi.org/10.1063/1.2364666
A study of hydrogen sensing performance of Pt-GaN Schottky diodes. - In: IEEE sensors journal, ISSN 1558-1748, Bd. 6 (2006), 5, S. 1115-1119
https://doi.org/10.1109/JSEN.2006.881346
Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 7, 074909, insges. 3 S.
https://doi.org/10.1063/1.2353785
Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities. - In: Surface and interface analysis, ISSN 1096-9918, Bd. 38 (2006), 4, S. 444-447
http://dx.doi.org/10.1002/sia.2240
InN as THz emitter excited at 1060 nm and 800 nm. - In: Millimeter-wave and terahertz photonics, 2006, S. 61940I, insges. 9 S.
Mikro- und nanoelektromechanische Resonatoren für die Sensorik. - Aachen : Shaker, 2006. - 162 S.. - (Berichte aus der Halbleitertechnik) Zugl.: Ilmenau : Techn. Univ., Diss., 2005
ISBN 3832252754 = 978-3-8322-5275-5
Das Hauptziel der vorliegenden Dissertation war die Realisierung von unter normalen Umgebungsbedingungen arbeitenden Mikro- und Nanoresonatoren für die Sensorik. Das angestrebte Anwendungsgebiet ist die Viskositätsmessung, eine Temperaturmessung und selektive Sensoren für die Bio-Medizin. Hoch sensitive Sensorsysteme erfordern die Entwicklung und Optimierung einer Technologie für die Herstellung SiC-basierender mikro- und nanoelektromechanischer Resonatoren möglichst kleiner Masse. Der theoretische Anteil dieser Arbeit befasst sich mit der Resonatortheorie, dem Resonatordesign und dem Einfluss unterschiedlich verspannter Epitaxieschichten auf die zu erzielenden Resonanzfrequenzen. Die technologische Herausforderung bestand in der Entwicklung eines Epitaxieprozesses für gering verspanntes 3C-SiC und die Optimierung der Schichteigenschaften hinsichtlich der Anwendung als MEMS- und NEMS-Resonatoren. Des weiteren musste eine geeignete Strukturierungstechnik für das chemisch sehr stabile Material SiC mit der entsprechenden Ätzcharakteristik entwickelt werden. Diese Optimierung erfolgte bezüglich anisotroper und isotroper Ätzprofile sowie der Selektivität zwischen Silizium und Siliziumkarbid. Hierzu wurden drei unterschiedliche Plasmatechnologien charakterisiert und ihrer Anwendbarkeit für Mikro- und Nanostrukturen diskutiert. Die experimentelle Bestimmung der Resonanzfrequenzen und Resonatorgüten unter normalen Messbedingungen erfolgt mit einer Impulsmessmethode. Die unter Luft charakterisierten Resonatoren erzielen Resonanzfrequenzen bis 2 MHz und Resonatorgüten bis 350. Die Güte wird hauptsächlich durch die viskose Dämpfung der Luft bestimmt.
Tuning of surface properties of AlGaN/GaN sensors for nanodroplets and picodroplets. - In: IEEE sensors journal, ISSN 1558-1748, Bd. 6 (2006), 4, S. 881-886
https://doi.org/10.1109/JSEN.2006.877984
Nanocrystalline AlN:Si field emission arrays for vacuum electronics. - In: Physica status solidi, ISSN 1862-6319, Bd. 203 (2006), 7, S. 1839-1844
http://dx.doi.org/10.1002/pssa.200565238
Pulsed mode operation of strained microelectromechanical resonators in air. - In: Applied physics letters, ISSN 1077-3118, Bd. 88 (2006), 25, S. 253501, insges. 3 S.
http://dx.doi.org/10.1063/1.2213950
Phase selective growth and properties of rhombohedral and cubic indium oxide. - In: Applied physics letters, ISSN 1077-3118, Bd. 89 (2006), 1, S. 011904, insges. 3 S.
http://dx.doi.org/10.1063/1.2219125
Growth of AlN nanowires by metal organic chemical vapour deposition. - In: Physica status solidi, ISSN 1521-3951, Bd. 243 (2006), 7, S. 1476-1480
http://dx.doi.org/10.1002/pssb.200565205
Transition energies and Stokes shift analysis for In-rich InGaN alloys. - In: Physica status solidi, ISSN 1521-3951, Bd. 243 (2006), 7, S. 1572-1576
http://dx.doi.org/10.1002/pssb.200565303
Absorption and crystallinity of poly(3-hexylthiophene)/fullerene blends in dependence on annealing temperature. - In: Thin solid films, ISSN 1879-2731, Bd. 511/512 (2006), S. 483-485
http://dx.doi.org/10.1016/j.tsf.2005.12.064
Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1420-1424
http://dx.doi.org/10.1002/pssc.200565178
Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 2009-2013
http://dx.doi.org/10.1002/pssc.200565300
Wet chemical etching of AlN in KOH solution. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1767-1770
http://dx.doi.org/10.1002/pssc.200565206
The conductivity of Mg-doped InN. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1721-1724
http://dx.doi.org/10.1002/pssc.200565473
Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 2274-2277
http://dx.doi.org/10.1002/pssc.200565123
Quantitative Auger electron spectroscopy of SiC. - In: Vacuum, ISSN 0042-207X, Bd. 80 (2006), 9, S. 990-995
http://dx.doi.org/10.1016/j.vacuum.2006.01.003
Ge-modified Si(100) substrates for the growth of 3C-SiC(100). - In: Applied physics letters, ISSN 1077-3118, Bd. 88 (2006), 21, S. 211909, insges. 3 S.
http://dx.doi.org/10.1063/1.2206558
Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications. - In: Physica status solidi, ISSN 1862-6319, Bd. 203 (2006), 7, S. 1829-1833
http://dx.doi.org/10.1002/pssa.200565232
Conduction band parameters of ZnO. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 39 (2006), 1/4, S. 299-305
http://dx.doi.org/10.1016/j.spmi.2005.08.052
Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells. - In: Chemical physics letters, Bd. 418 (2006), 4/6, S. 347-350
http://dx.doi.org/10.1016/j.cplett.2005.11.020
Eine neue Klasse von Sensoren für mikro- und nanofluidische Systeme für biotechnologische Anwendungen. - In: Abstracts, (2006), insges. 1 S.
Nanoelectromechanical resonators and their application for viscosity measurements in smallest amounts of liquids. - In: Abstracts, (2006), insges. 1 S.
GaN based pH-sensors for monitoring of bioreactions. - In: Abstracts, (2006), insges. 1 S.
Pt/GaN Schottky diodes for hydrogen gas sensors. - In: Sensors and actuators, ISSN 0925-4005, Bd. 113 (2006), 2, S. 797-804
http://dx.doi.org/10.1016/j.snb.2005.03.019
Luminescence properties of highly Si-doped AlN. - In: Applied physics letters, ISSN 1077-3118, Bd. 88 (2006), 7, S. 071906, insges. 3 S.
http://dx.doi.org/10.1063/1.2173622
Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys. - In: Physica status solidi, ISSN 1862-6319, Bd. 203 (2006), 1, S. 42-49
http://dx.doi.org/10.1002/pssa.200563507
Electromechanical resonances of SiC and AIN beams under ambient conditions. - In: Maschinenbau von Makro bis Nano, 2005, [04.P.01], insges. 2 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=17356
Group III-nitrides and 3C-SiC for micro- and nanoelectromechanical resonators. - In: Maschinenbau von Makro bis Nano, 2005, [04.11], insges. 2 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=17311
Estimation of the piezoelectric properties of thin AIN layers for MEMS applications. - In: Maschinenbau von Makro bis Nano, 2005, [04.07], insges. 4 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=17305
Development of a reference field for a NPM-machine. - In: Maschinenbau von Makro bis Nano, 2005, [01.P.01], insges. 2 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=16760
New route of nanowire integration in microfabrication processes for sensor applications. - In: Nanofair 2005, (2005), S. 17-20
Fabrication of 3C-SiC/Si MEMS and NEMS for sensor applications. - In: HeT-SiC-05, (2005), S. 44-49
Stress design in 3C-SiC/Si heteroepitaxial systems. - In: HeT-SiC-05, (2005), S. 20-26
Processing of novel SiC and group III-nitride based micro- and nanomechanical devices. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 202 (2005), 4, S. 671-676
http://dx.doi.org/10.1002/pssa.200460471
Beta to alpha transition and defects on SiC on Si grown by CVD. - In: Microscopy of semiconducting materials, (2005), S. 131-134
Strain relaxation and void reduction in SiC on Si by Ge predeposition. - In: Microscopy of semiconducting materials, (2005), S. 135-138
Determination of hole mobility and lifetime in bulk heterojunction solar cells by photoinduced absorption spectroscopy. - In: Arbeitskreis Festkörperphysik, chemische Physik und Polymerphysik, dielektrische Physik, dünne Schichten, Dynamik und statische Physik, Halbleiterphysik, Magnetismus, Metallphysik, Oberflächenphysik, tiefe Temperaturen, Vakuumphysik und Vakuumtechnik, Arbeitskreise biologische Physik, Physik sozioökonomischer Systeme, Symposien, 2005, HL 57.7
Selection rules for optical transitions of wurtzite InN. - In: Arbeitskreis Festkörperphysik, chemische Physik und Polymerphysik, dielektrische Physik, dünne Schichten, Dynamik und statische Physik, Halbleiterphysik, Magnetismus, Metallphysik, Oberflächenphysik, tiefe Temperaturen, Vakuumphysik und Vakuumtechnik, Arbeitskreise biologische Physik, Physik sozioökonomischer Systeme, Symposien, 2005, HL 43.4
kp parameters of wurtzite GaN. - In: Arbeitskreis Festkörperphysik, chemische Physik und Polymerphysik, dielektrische Physik, dünne Schichten, Dynamik und statische Physik, Halbleiterphysik, Magnetismus, Metallphysik, Oberflächenphysik, tiefe Temperaturen, Vakuumphysik und Vakuumtechnik, Arbeitskreise biologische Physik, Physik sozioökonomischer Systeme, Symposien, 2005, HL 15.3
Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene):fullerene. - In: Arbeitskreis Festkörperphysik, chemische Physik und Polymerphysik, dielektrische Physik, dünne Schichten, Dynamik und statische Physik, Halbleiterphysik, Magnetismus, Metallphysik, Oberflächenphysik, tiefe Temperaturen, Vakuumphysik und Vakuumtechnik, Arbeitskreise biologische Physik, Physik sozioökonomischer Systeme, Symposien, 2005, SYOO 6.17
Flexible large area polymer solar cells based on poly(3-hexylthiophene)/fullerene. - In: Solar energy materials & solar cells, ISSN 1879-3398, Bd. 85 (2005), 1, S. 13-20
http://dx.doi.org/10.1016/j.solmat.2004.03.001
SiC and AlN-based micro- and nanomechanical resonators for sensing applications. - In: 7. Dresdner Sensor-Symposium - neue Herausforderungen und Anwendungen in der Sensortechnik, (2005), S. 239-242
pH-Wert Messungen mit GaN-basierten Sensoren. - In: 7. Dresdner Sensor-Symposium - neue Herausforderungen und Anwendungen in der Sensortechnik, (2005), S. 207-210
A novel class of sensors for micro- and nanofluidic systems in biotechnological applications. - In: 7. Dresdner Sensor-Symposium - neue Herausforderungen und Anwendungen in der Sensortechnik, (2005), S. 143-146
A novel class of sensors for system integrative concepts in biotechnological applications. - In: NSTI BioNano, (2005), S. 489-492
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN. - In: Journal of applied physics, ISSN 1089-7550, Bd. 98 (2005), 9, 093508, insges. 6 S.
https://doi.org/10.1063/1.2126786
Dielectric function and critical points of the band structure for hexagonal and cubic GaN and AlN. - Ilmenau : Univ.-Bibliothek. - 3 S. = 1,06 MB, TextCD-ROM-Ausg.: Highlights / Annual report 2004 // Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H. - Berlin : BESSY, 2005, S. 206-208
http://www.db-thueringen.de/servlets/DocumentServlet?id=6255
Polytype control and properties of AlN on silicon. - In: Physica status solidi, ISSN 1610-1642, Bd. 2 (2005), 7, S. 2199-2203
http://dx.doi.org/10.1002/pssc.200461579
Surface conductivity of epitaxial InN. - In: Physica status solidi, ISSN 1610-1642, Bd. 2 (2005), 7, S. 2254-2257
http://dx.doi.org/10.1002/pssc.200461448
Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates. - In: Physica status solidi, ISSN 1610-1642, Bd. 2 (2005), 4, S. 1284-1287
http://dx.doi.org/10.1002/pssc.200460427
Defect related absorption and emission in AlGaN solar-blind UV photodetectors. - In: Physica status solidi, ISSN 1610-1642, Bd. 2 (2005), 4, S. 1360-1365
http://dx.doi.org/10.1002/pssc.200460458
LESR study on PPV-PPE/PCBM composites for organic photovoltaics. - In: Synthetic metals, Bd. 148 (2005), 2, S. 199-204
http://dx.doi.org/10.1016/j.synthmet.2004.09.023
Electromechanical resonances of SiC and AlN beams under ambient conditions. - In: Conference proceedings, (2005), S. 1531-1534
Surface passivation of GaAs using a Ge interface control layer. - In: Physica status solidi, ISSN 1862-6319, Bd. 202 (2005), 9, S. 1778-1785
http://dx.doi.org/10.1002/pssa.200420026
Phenylene-ethynylene/phenylene-vinylene hybrid polymers: optical and electrochemical characterization, comparison with poly[2-methoxy-5-(3,7-dimethyloctyloxy)-1,4-phenylene vinylene] and application in flexible polymer solar cells. - In: Thin solid films, ISSN 1879-2731, Bd. 474 (2005), 1/2, S. 201-210
http://dx.doi.org/10.1016/j.tsf.2004.08.188
Stress manipulation in CVD grown SiC on Si by mono- and submonolayer Ge precoverages. - In: EUROCVD-15, (2005), S. 707-714
Silicon carbide nanoheteropolytypic structures grown by UHV-CVD on Si(111). - In: EUROCVD-15, (2005), S. 699-706
Tribological characteristics of WC1-x9 W2C and WC tungsten carbide films. - In: Life cycle tribology, (2005), S. 409-417
Micro-electromechanical systems based on 3C-SiC/Si heterostructures. - In: Materials science & engineering, ISSN 1873-0191, Bd. 25 (2005), 5/8, S. 804-808
http://dx.doi.org/10.1016/j.msec.2005.07.016
[alpha]-SiC-[beta]-SIC heteropolytype structures on Si (111). - In: Applied physics letters, ISSN 1077-3118, Bd. 87 (2005), 20, S. 201910, insges. 3 S.
http://dx.doi.org/10.1063/1.2131179
Dosierung von Flüssigkeiten im Pikoliterbereich. - In: Mikrosystemtechnik Kongress 2005, (2005), S. 697-699
Optoelectronic properties of conjugated polymer/fullerene binary pairs with variety of LUMO level differences. - In: Organic photovoltaics, (2005), S. 529-557
Ion beam synthesis of 3C-(Si 1-x C 1-y ) Ge x+y solid solution. - In: Physica status solidi, ISSN 1862-6319, Bd. 202 (2005), 4, S. 545-549
http://dx.doi.org/10.1002/pssa.200460418
Growth of tree-dimensional SiC clusters on simodelled by KMC. - In: Computational materials science, Bd. 33 (2005), 1/3, S. 375-381
http://dx.doi.org/10.1016/j.commatsci.2004.12.005
Effect of nanoscale surface morphology on the phase stability of 3C-AIN films on Si(111). - In: Journal of applied physics, ISSN 1089-7550, Bd. 97 (2005), 11, 114306, insges. 6 S.
https://doi.org/10.1063/1.1915535
Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111). - In: Applied physics letters, ISSN 1077-3118, Bd. 87 (2005), 4, S. 041905, insges. 3 S.
http://dx.doi.org/10.1063/1.1999858
Molecular dynamics study of diffusion barriers of Si and C adatoms on Si surfaces. - In: Eighth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2005), S. 51-55
Effects of solvent and annealing on the improves performance of solar cells based on poly(3-hexylthiophene): fullerene. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 20, S. 201120, insges. 3 S.
http://dx.doi.org/10.1063/1.1929875
Resonant localized donor state above the conduction band minimum in InN. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 26, S. 262105, insges. 3 S.
http://dx.doi.org/10.1063/1.1977212
Comparison of normal and inverse poly(3-hexylthiophene)/fullerene solar cell architectures. - In: Solar energy materials & solar cells, ISSN 1879-3398, Bd. 85 (2005), 2, S. 277-283
http://dx.doi.org/10.1016/j.solmat.2004.08.001
Momentum matrix element and conduction band nonparabolicity in wurtzite GaN. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 16, S. 161908, insges. 3 S.
http://dx.doi.org/10.1063/1.1906313
Nanoscale multilayer WC/C coatings developed for nanopositioning: Part I. Microstructures and mechanical properties. - In: Thin solid films, ISSN 1879-2731, Bd. 488 (2005), 1, S. 132-139
http://dx.doi.org/10.1016/j.tsf.2005.04.107
The influence of the optoelectronic properties of poly(3-alkylthiophenes) on the device parameters in flexible polymer solar cells. - In: Organic electronics, Bd. 6 (2005), 2, S. 65-77
http://dx.doi.org/10.1016/j.orgel.2005.02.004
Augerelektronenspektroskopie und niederenergetischer Ionenbeschuss von Siliziumkarbid, 2005. - Online-Ressource (PDF-Datei: 147 S., 3620 KB) : Ilmenau, Techn. Univ., Diss., 2005
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Die vorliegende Arbeit behandelt den Einsatz der Augerelektronenspektroskopie bei der Untersuchung von SiC-Schichten und -Einkristallen mit besonderem Augenmerk auf die Wirkung des Ionenstrahls auf die SiC-Oberfläche beim Sputtern. Die Augerelektronenspektroskopie eignet sich zur Bestimmung vieler Eigenschaften einer SiC-Oberfläche nach dem Beschuss mit Edelgasionen. Der theoretische Teil beinhaltet einen Beitrag zur Anwendung der Faktorenanalyse bei der Auswertung von Auger-Spektren. Ein weiteres Thema des theoretischen Teils ist die Sputtertheorie. Hier wird eine Korrektur der Sigmundschen Formel zur Berechnung der Sputterausbeuten präsentiert. Im experimentellen Teil der Arbeit werden Aussagen über die Abweichungen der Oberflächenzusammensetzung nach dem Sputtern und über die Konzentration der eingebauten Edelgase getroffen. Aus dem Vergleich zwischen den experimentell gemessenen und theoretisch berechneten bzw. simulierten Werten der Sputterausbeuten wird die effektive Oberflächenbindungsenergie von 4 eV/Atom für das Sputtern von SiC mit Edelgasen bestimmt. Sowohl der Nachweis der Änderungen der elektronischen Struktur bei den durch Ionenbeschuss zerstörten einkristallinen SiC-Oberflächen bzw. -Schichten als auch die Bestimmung des Leitungstyps mittels Augerelektronenspektroskopie erweitern das Einsatzgebiet dieser analytischen Methode in der SiC-Technologie.
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Verbundprojekt ZULES : Schlussbericht zum Teilvorhaben der TU Ilmenau ; Fachgebiet Festkörperelektronik ; Projektzeitraum: 01.01.2000 - 30.06.2003 ; Förderschwerpunkt "Mikrosystemtechnik 2000+" des Bundesministeriums für Bildung und Forschung. - Ilmenau. - 73 Bl.Förderkennzeichen BMBF 16 SV 1183/4. - Verbund-Nr. 01017713. - Engl. Zsfassung u.d.T.: ZULES - Final report subproject of Technische Universität Ilmenau. - Literaturverz. Bl. 73
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The Mn3+/2+ acceptor level in group III nitrides. - In: Applied physics letters, ISSN 1077-3118, Bd. 81 (2002), 27, S. 5159-5161
http://dx.doi.org/10.1063/1.1530374
Hydrogen response mechanism of Pt-GaN Schottky diodes. - In: Applied physics letters, ISSN 0003-6951, Bd. 80 (2002), 7, S. 1222-1224
Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures. - In: Applied physics letters, ISSN 0003-6951, Bd. 80 (2002), 7, S. 1204-1206
Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG. - In: Physica status solidi, ISSN 0370-1972, Bd. 234 (2002), 3, S. 713-716
The influence of Ge on the SiC nucleation on (111)Si surfaces. - In: Silicon carbide and related materials, (2001), S. 183-186
Evaluation of carbon surface diffusion on silicon by using surface phase transitions. - In: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 12 - 17 June 2000, St. Petersburg, Russia, (2001), S. 173-177
Characterization of SiC grown on Ge modified silicon substrates. - In: Silicon carbide - materials, processing and devices, 2001, H5.7, insges. 6 S.
Structural and elasticity-based properties of SiC-based interfaces: their relevance to the heteroepitaxy of III-V nitrides. - In: GaN and related alloys - 2000, 2001, G3.49, insges. 6 S.
The influence of surface preparation on the properties of SiC on Si(111). - In: Physica status solidi, ISSN 1862-6319, Bd. 185 (2001), 1, S. 159-166
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(AlN)x(SiC)1-x buried layers implanted in 6HSiC: a theoretical study of their optimized composition. - In: Applied surface science, Bd. 184 (2001), 1/4, S. 383-386
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Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics. - In: Applied surface science, Bd. 179 (2001), 1/4, S. 49-54
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Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces. - In: Applied surface science, Bd. 184 (2001), 1/4, S. 79-83
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Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 178 (2001), 1/4, S. 269-274
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Investigation of the nitridation of Al2O3 (0001) substrates by a nitrogen radio frequency plasma source. - In: Microelectronics, microsystems and nanotechnology, (2001), S. 135-138
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Auger depth profiling of thin SiC layers: practical aspects for a better understanding of quantitative analysis. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 281-287
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Im Titel ist "+" hochgestellt
Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces. - In: Thin solid films, ISSN 1879-2731, Bd. 364 (2000), 1/2, S. 28-32
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Investigation of the nucleation and growth of SiC nanostructures on Si. - In: Thin solid films, ISSN 1879-2731, Bd. 380 (2000), 1/2, S. 92-96
https://doi.org/10.1016/S0040-6090(00)01476-0
A new method of the determination of significant factors with factor analysis in AES. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 368 (2000), 4, S. 326-334
http://dx.doi.org/10.1007/s002160000450
Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth. - In: Computational materials science, Bd. 17 (2000), 2/4, S. 544-550
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Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers. - In: Thin solid films, ISSN 1879-2731, Bd. 359 (2000), 2, S. 146-149
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Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods. - In: Diamond and related materials, ISSN 0925-9635, Bd. 8 (1999), 2/5, S. 346-351
Im Titel ist "+" hochgestellt
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The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 365 (1999), 1, S. 195-198
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A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high-dose N+ and Al+ co-implants in 6H-SiC. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 757-760
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Im Titel sind "1-x" und "x" tiefgestellt
Cross-sectional micro-Raman spectroscopy: a tool for structural investigations of thin polytypic SiC layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 661-664
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Im Titel ist "1-x" und "x" tiefgestellt, "+" hochgestellt
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Kohlenstoff induzierte Rekonstruktionen auf Si-Oberflächen. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
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Verbundprojekt: Plasma- und thermisch gestützte Oberflächentechnologien - PLATHO : Teilvorhaben: Photo-, Thermo-CVD und Schichtanalytik ; Schlußbericht, Bearbeitungsdauer: 01.07.92 - 30.06.96
[Electronic ed.]. - Ilmenau. - 16 p. = 104 kB, textContract no.: BMFT/BMBF 13 MV 0227
Service centre, film technology
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