Lebedev, Vadim; Morales, Francisco M.; Cimalla, Volker; Lozano, Juan Gabriel; Gonzales, D.; Himmerlich, Marcel; Krischok, Stefan; Schäfer, Jürgen A.; Ambacher, Oliver
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 289-294
http://dx.doi.org/10.1016/j.spmi.2006.07.006
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 289-294
http://dx.doi.org/10.1016/j.spmi.2006.07.006
Pezoldt, Jörg; Kups, Thomas; Weih, Petia; Stauden, Thomas; Ambacher, Oliver
Atomic layer epitaxy of (Si1-xC1-y)Gex+y layers on 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 1559-1562
Atomic layer epitaxy of (Si1-xC1-y)Gex+y layers on 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 1559-1562
Förster, Christian; Cimalla, Volker; Stubenrauch, Mike; Rockstuhl, Carsten; Brueckner, Klemens; Hein, Matthias; Pezoldt, Jörg; Ambacher, Oliver
Micromachining of novel SiC on Si structures for device and sensor applications. - In: Silicon carbide and related materials - 2005, (2006), S. 1111-1114
Micromachining of novel SiC on Si structures for device and sensor applications. - In: Silicon carbide and related materials - 2005, (2006), S. 1111-1114
Kups, Thomas; Weih, Petia; Voelskow, Matthias; Skorupa, Wolfgang; Pezoldt, Jörg
High dose high temperature ion implantation of Ge into 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 851-854
High dose high temperature ion implantation of Ge into 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 851-854
Förster, Christian; Kosiba, Rastislav; Ecke, Gernot; Cimalla, Volker; Ambacher, Oliver; Pezoldt, Jörg
Low energy ion modification of 3C-SiC surfaces. - In: Silicon carbide and related materials - 2005, (2006), S. 685-688
Low energy ion modification of 3C-SiC surfaces. - In: Silicon carbide and related materials - 2005, (2006), S. 685-688
Schmidt, Alexander A.; Trushin, Yuri V.; Safonov, K. L.; Kharlamov, Vladimir S.; Kulikov, Dmitri V.; Ambacher, Oliver; Pezoldt, Jörg
Multi-scale simulation of MBE-grown SiC/Si nanostructures. - In: Silicon carbide and related materials - 2005, (2006), S. 315-318
Multi-scale simulation of MBE-grown SiC/Si nanostructures. - In: Silicon carbide and related materials - 2005, (2006), S. 315-318
Pezoldt, Jörg; Morales, Francisco M.; Stauden, Thomas; Förster, Christian; Polychroniadis, E. K.; Stoemenos, J.; Panknin, D.; Skorupa, Wolfgang
Growth acceleration in FLASiC assisted short time liquid phase epitaxy by melt modification. - In: Silicon carbide and related materials - 2005, (2006), S. 295-298
Growth acceleration in FLASiC assisted short time liquid phase epitaxy by melt modification. - In: Silicon carbide and related materials - 2005, (2006), S. 295-298
Ferro, Gabriel; Soueidan, Maher; Jacquier, C.; Godignon, P.; Stauden, Thomas; Pezoldt, Jörg; Lazar, M.; Montserrat, J.; Monteil, Y.
Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts. - In: Silicon carbide and related materials - 2005, (2006), S. 275-278
Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts. - In: Silicon carbide and related materials - 2005, (2006), S. 275-278
Koufaki, Maria; Sifakis, M.; Iliopoulos, E.; Pelekanos, Nikos; Modreanu, Mircea; Cimalla, Volker; Ecke, Gernot; Aperathitis, Elias
Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering. - In: Applied surface science, Bd. 253 (2006), 1, S. 405-408
http://dx.doi.org/10.1016/j.apsusc.2006.06.023
Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering. - In: Applied surface science, Bd. 253 (2006), 1, S. 405-408
http://dx.doi.org/10.1016/j.apsusc.2006.06.023
Knedlik, Christian;
Bedarf und Perspektiven der Prüftechnik in Thüringen. - In: Festschrift zum Ehrenkolloquium anlässlich der Emeritierung von Univ.-Prof. Dr.-Ing. habil. Dr. rer. nat. Christian Knedlik, (2006), S. 1-13
Bedarf und Perspektiven der Prüftechnik in Thüringen. - In: Festschrift zum Ehrenkolloquium anlässlich der Emeritierung von Univ.-Prof. Dr.-Ing. habil. Dr. rer. nat. Christian Knedlik, (2006), S. 1-13