Electrochemical nucleation of silicon in ionic liquid-based electrolytes. - In: Meeting abstracts, ISSN 2151-2043, Bd. MA2020-01 (2020), 19, 1181
https://doi.org/10.1149/MA2020-01191181mtgabs
Electrodeposition of cuprous oxide on a free-standing porous Cu framework for photoelectrochemical water splitting. - In: Meeting abstracts, ISSN 2151-2043, Bd. MA2020-02 (2020), 15, 1425
https://doi.org/10.1149/MA2020-02151425mtgabs
Advances in epitaxial GaInP/GaAs/Si triple junction solar cells. - In: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), (2020), S. 0194-0196
https://doi.org/10.1109/PVSC45281.2020.9300594
Resistive switching behavior of lateral and vertical MoS2 devices. - In: Mikro-Nano-Integration, (2020), S. 80-84
Combining nanoimprint lithography and nanowire contact printing on a single platform. - In: Mikro-Nano-Integration, (2020), S. 32-35
MEMS based speakers - sounds good?!. - In: Mikro-Nano-Integration, (2020), S. 23-28
Investigations on long-range AFM scans using a nanofabrication machine (NFM-100). - In: Proceedings, ISSN 2504-3900, Volume 56 (2020), issue 1, 34, Seite 1-3
The focus of this work lies on investigations on a new Nano Fabrication Machine (NFM-100) with a mounted atomic force microscope (AFM). This installed tip-based measuring system uses self-sensing and self-actuated microcantilevers, which can be used especially for field-emission scanning probe lithography (FESPL). The NFM-100 has a positioning range of Ø 100 mm, which offers, in combination with the tip-based measuring system, the possibility to analyse structures over long ranges. Using different gratings, the accuracy and the reproducibility of the NFM-100 and the AFM-system will be shown.
https://doi.org/10.3390/proceedings2020056034
Combinatorial gas phase electrodeposition for fabrication of three-dimensional multimodal gas sensor array. - In: Materials today, ISSN 2214-7853, Bd. 33 (2020), 6, S. 2451-2457
https://doi.org/10.1016/j.matpr.2020.01.335
Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces. - In: Surface and interface analysis, ISSN 1096-9918, Bd. 52 (2020), 12, S. 933-938
We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4-50 nm) GaP films were grown on Si(001) substrates with 2˚ miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.
https://doi.org/10.1002/sia.6829
Conceptional design of a positioning device with subatomic resolution and reproducibility. - In: Proceedings of the 20th International Conference of the European Society for Precision Engineering and Nanotechnology, (2020), S. 305-306