Theoretical analysis of particle chemistry in plasma spraying. - In: Tagungsband, (2004), S. 119-128
Optimisation of nozzle contours for the APS. - In: Tagungsband, (2004), S. 55-64
In plasma spraying, individual droplet behavior at impact is the fundamental element to understand resulting coating microstructure. A new experimental set-up with two fast shutter cameras (exposure time: 100 ns to 1 ms) allows visualisation at impact of a single particle plasma sprayed with a direct current (d.c) torch. Images of a single plasma-sprayed particle at impact on a smooth substrate are presented. Splashing phenomena can be decomposed in two parts: impact and flattening ones. Matter ejection due to impact is independent from the substrate temperature while it is not the case for flattening splashing. Image correlation with recording signals (TTL pulse for triggering of cameras, pyrometric signal) enable studing event chronologies which are essential to understand the complete impact phenomenon. Zirconia particles with different sizes are used in conjunction with glass and stainless steel smooth substrates maintained at specific temperatures (over or under the transition temperature)
Miniaturized dosimeters for an individualized prevention of noise-related impairment in the working environment. - In: Beiträge zur 38. Jahrestagung der Deutschen Gesellschaft für Biomedizinische Technik im VDE - BMT 2004, 22 -24 September 2004, TU Ilmenau, (2004), S. 1028-1029
BIO-MEMS - how can organisms or cell organelles "Survive" in technical systems?. - In: Beiträge zur 38. Jahrestagung der Deutschen Gesellschaft für Biomedizinische Technik im VDE - BMT 2004, 22 -24 September 2004, TU Ilmenau, (2004), S. 1018-1019
Growth of AlxGa1-xN-layers on planar and patterned substrates. - In: Journal of crystal growth, Bd. 272 (2004), 1/4, S. 506-514
http://dx.doi.org/10.1016/j.jcrysgro.2004.09.044
Cubic InN on r-plane sapphire. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 36 (2004), 4/6, S. 487-495
http://dx.doi.org/10.1016/j.spmi.2004.09.054
Self-organized SiC nanostructures on silicon. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 36 (2004), 1/3, S. 345-351
http://dx.doi.org/10.1016/j.spmi.2004.08.001
Formation of 3C-SiC films embedded in SiO2 by sacrificial oxidation. - In: Silicon carbide and related materials 2003, (2004), S. 1515-1518
Etching of SiC with fluorine ECR plasma. - In: Silicon carbide and related materials 2003, (2004), S. 821-824
Stress control in 3C-SiC films grown on Si(111). - In: Silicon carbide and related materials 2003, (2004), S. 301-304