Erler, Frank; Romanus, Henry; Lindner, Jörg K. N.; Spieß, Lothar
High temperature stable WSi2-contacts on p-6H-silicon carbide. - In: Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999, (1999), S. 111-116
High temperature stable WSi2-contacts on p-6H-silicon carbide. - In: Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999, (1999), S. 111-116
Romanus, Henry; Cimalla, Volker; Ahmed, Syed Imad-Uddin; Schäfer, Jürgen A.; Ecke, Gernot; Avci, R.; Spieß, Lothar
Preparation of conductive tungsten carbide layers for SiC high temperature applications. - In: Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999, (1999), S. 99-104
Preparation of conductive tungsten carbide layers for SiC high temperature applications. - In: Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999, (1999), S. 99-104
Knedlik, Christian; Breternitz, Volker; Tippmann, Herbert; Scheffner, W.; Gutermuth, U.
Alterung von Zinn-Blei-Belotungen auf Bronze Halbzeug. - In: Werkstoffe für die Informationstechnik, (1999), S. 71-76
Alterung von Zinn-Blei-Belotungen auf Bronze Halbzeug. - In: Werkstoffe für die Informationstechnik, (1999), S. 71-76
Vaněk, Oldrich; Hučko, B.; Držik, M.; Breternitz, Volkmar
Silicon wafer residual stresses determination by evaluating of the dynamic response. - In: 44. Internationales Wissenschaftliches Kolloquium, (1999), insges. 5 S.
Silicon wafer residual stresses determination by evaluating of the dynamic response. - In: 44. Internationales Wissenschaftliches Kolloquium, (1999), insges. 5 S.
Schawohl, Jens; Spieß, Lothar; Teichert, Gerd; Reich, Steffen; Böswetter, Gerd
Charakterisierung von CVD-Hartstoffschichten auf Hartmetall. - In: 44. Internationales Wissenschaftliches Kolloquium, (1999), insges. 7 S.
Charakterisierung von CVD-Hartstoffschichten auf Hartmetall. - In: 44. Internationales Wissenschaftliches Kolloquium, (1999), insges. 7 S.
Spieß, Lothar; Knedlik, Christian
Nanostrukturierte Werkstoffe - Meßnormale?. - In: 44. Internationales Wissenschaftliches Kolloquium, (1999), insges. 6 S.
Nanostrukturierte Werkstoffe - Meßnormale?. - In: 44. Internationales Wissenschaftliches Kolloquium, (1999), insges. 6 S.
Novotny, I.; Breternitz, Volkmar; Ivanic, R.; Knedlik, Christian; Tvarozek, Vladimir; Spieß, Lothar; Rehacek, Vlastimil
Thin film microelectrode arrays for electrochemical biosensors. - In: [Vortragsreihen, (1999), S. 215-220
Thin film microelectrode arrays for electrochemical biosensors. - In: [Vortragsreihen, (1999), S. 215-220
Romanus, Henry;
Teichert, Gerd; Spieß, Lothar
Investigation of polymorphism and estimation of lattice constants of SiC epilayers by four circle X-ray diffraction. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 437-440
Investigation of polymorphism and estimation of lattice constants of SiC epilayers by four circle X-ray diffraction. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 437-440
Fabricius, Alexander; Breternitz, Volkmar; Knedlik, Christian; Henning, Andreas; Liebscher, Eckhard; Vogel, Silvia
Investigations of electromigration failure by electrical measurement and scanning probe microscopy with additional simulation. - In: Materials reliability in microelectronics VIII, (1998), S. 27-32
Investigations of electromigration failure by electrical measurement and scanning probe microscopy with additional simulation. - In: Materials reliability in microelectronics VIII, (1998), S. 27-32
Pezoldt, Jörg; Stauden, Thomas; Cimalla, Volker; Ecke, Gernot; Romanus, Henry; Eichhorn, Gerd
Growth of SiC layers on (111) Si by solid source molecular beam epitaxy. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 251-254
Growth of SiC layers on (111) Si by solid source molecular beam epitaxy. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 251-254