Knedlik, Christian; Spieß, Lothar
Werkstoffe und Analytik für die Mikroelektronik aus der Sicht der Metallisierung und Kontaktierung. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
Werkstoffe und Analytik für die Mikroelektronik aus der Sicht der Metallisierung und Kontaktierung. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
Vaněk, Oldrich; Harmatha, L.; Stuchlíková, L.; Tippmann, Herbert; Janiček, J.
Nickel thin film resistance sensors for measurement of very low temperatures. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 4 S.
Nickel thin film resistance sensors for measurement of very low temperatures. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 4 S.
Goldhahn, Rüdiger; Shokhovets, Sviatoslav; Romanus, Henry; Cheng, T. S.; Foxon, C. Thomas
Free exciton recombination in tensile strained GaN grown on GaAs. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1271-1274
Free exciton recombination in tensile strained GaN grown on GaAs. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1271-1274
Romanus, Henry; Cimalla, Volker; Kromka, Alexander; Scheiner, Jörg; Spieß, Lothar; Pezoldt, Jörg
Atomic force microscopy investigations of rapid thermal carbonized silicon. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 47 (1997), 3, S. 274-278
http://dx.doi.org/10.1016/S0921-5107(97)00045-7
Atomic force microscopy investigations of rapid thermal carbonized silicon. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 47 (1997), 3, S. 274-278
http://dx.doi.org/10.1016/S0921-5107(97)00045-7
Spieß, Lothar;
Nennewitz, Olaf; Pezoldt, Jörg
Improved ohmic contacts to p-type 6H-SiC. - In: Silicon carbide and related materials 1995, (1996), S. 585-588
Improved ohmic contacts to p-type 6H-SiC. - In: Silicon carbide and related materials 1995, (1996), S. 585-588
Baumann, Uwe; Pezoldt, Jörg; Cimalla, Volker; Nennewitz, Olaf; Schwierz, Frank; Schipanski, Dagmar
Electrical characterization of SiC/Si-heterostructures formed by rapid thermal carbonization of Si. - In: Silicon carbide and related materials 1995, (1996), S. 149-152
Electrical characterization of SiC/Si-heterostructures formed by rapid thermal carbonization of Si. - In: Silicon carbide and related materials 1995, (1996), S. 149-152
Angelov, Mirko; Goldhahn, Rüdiger; Nennewitz, Olaf; Schön, Silke
Characterization of ZnGe(As x P 1-x) 2 crystals by electrolyte electroreflectance spectroscopy. - In: Diagnostic techniques for semiconductor materials processing II, (1996), S. 567-572
Characterization of ZnGe(As x P 1-x) 2 crystals by electrolyte electroreflectance spectroscopy. - In: Diagnostic techniques for semiconductor materials processing II, (1996), S. 567-572
Fabricius, Alexander; Nennewitz, Olaf; Spieß, Lothar; Cimalla, Volker; Pezoldt, Jörg
Rapid thermal annealing of tungsten silicide films. - In: Silicide thin films, (1996), S. 625-630
Rapid thermal annealing of tungsten silicide films. - In: Silicide thin films, (1996), S. 625-630
Teichert, Gerd; Pezoldt, Jörg; Cimalla, Volker; Nennewitz, Olaf; Spieß, Lothar
Analysis of reflection high energy electron diffraction pattern of silicon carbide grown on silicon. - In: Evolution of epitaxial structure and morphology, (1996), S. 17-22
Analysis of reflection high energy electron diffraction pattern of silicon carbide grown on silicon. - In: Evolution of epitaxial structure and morphology, (1996), S. 17-22
Nennewitz, Olaf; Spieß, Lothar; Breternitz, Volkmar
Ohmic contacts to p-type 6H-silicon carbide. - In: Applied surface science, Bd. 91 (1995), 1/4, S. 347-351
http://dx.doi.org/10.1016/0169-4332(95)00144-1
Ohmic contacts to p-type 6H-silicon carbide. - In: Applied surface science, Bd. 91 (1995), 1/4, S. 347-351
http://dx.doi.org/10.1016/0169-4332(95)00144-1