Koch, Michael;
Innovationsfelder der Kunststoffindustrie. - In: Kunststoffe, ISSN 0023-5563, Bd. 103 (2013), 10, S. 28-34
Innovationsfelder der Kunststoffindustrie. - In: Kunststoffe, ISSN 0023-5563, Bd. 103 (2013), 10, S. 28-34
Die Studie hat detailliert die Innovations- und Wachstumsfelder der Kunststoffindustrie herausgearbeitet. Dabei offenbarte sich, dass das gewachsene Selbstverständnis der Branche, das auf der Systematik der Verfahrenstechniken beruht, nicht mehr zeitgemäß ist. Wenn es heute um Wachstumswettbewerb durch Innovation in der Kunststoffindustrie geht, wird Interdisziplinarität zum strategischen Wettbewerbsvorteil.
Hannappel, Thomas; Koppka, Christian
Weltrekordsolarzellen in terrestrischem Einsatz. - In: 100 Orte Sonnenstrom, ISBN 978-3-00-042966-8, (2013), S. 94-99
Weltrekordsolarzellen in terrestrischem Einsatz. - In: 100 Orte Sonnenstrom, ISBN 978-3-00-042966-8, (2013), S. 94-99
Robotin, B.; Ispas, Adriana; Coman, V.; Bund, Andreas; Ilea, Petru
Nickel recovery from electronic waste II electrodeposition of Ni and Ni-Fe alloys from diluted sulfate solutions. - In: Waste management, ISSN 1879-2456, Bd. 33 (2013), 11, S. 2381-2389
http://dx.doi.org/10.1016/j.wasman.2013.06.001
Nickel recovery from electronic waste II electrodeposition of Ni and Ni-Fe alloys from diluted sulfate solutions. - In: Waste management, ISSN 1879-2456, Bd. 33 (2013), 11, S. 2381-2389
http://dx.doi.org/10.1016/j.wasman.2013.06.001
Romanyuk, Oleksandr; Hannappel, Thomas; Große, Frank
Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 88 (2013), 11, S. 115312, insges. 8 S.
http://dx.doi.org/10.1103/PhysRevB.88.115312
Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 88 (2013), 11, S. 115312, insges. 8 S.
http://dx.doi.org/10.1103/PhysRevB.88.115312
May, Matthias M.; Supplie, Oliver; Höhn, Christian; Krol, Roel; Lewerenz, Hans-Joachim; Hannappel, Thomas
The interface of GaP(100) and H 2 O studied by photoemission and reflection anisotropy spectroscopy. - In: New journal of physics, ISSN 1367-2630, Bd. 15 (2013), 103003, insges. 17 S.
https://doi.org/10.1088/1367-2630/15/10/103003
The interface of GaP(100) and H 2 O studied by photoemission and reflection anisotropy spectroscopy. - In: New journal of physics, ISSN 1367-2630, Bd. 15 (2013), 103003, insges. 17 S.
https://doi.org/10.1088/1367-2630/15/10/103003
Yan, Yong; Hao, Bo; Wang, Dong; Chen, Ge; Markweg, Eric; Albrecht, Arne; Schaaf, Peter
Understanding the fast lithium storage performance of hydrogenated TiO 2 nanoparticles. - In: Journal of materials chemistry. Materials for energy and sustainability / Royal Society of Chemistry. - London [u.a.] : RSC, 2013- , ISSN: 2050-7496 , ZDB-ID: 2702232-8, ISSN 2050-7496, Bd. 1 (2013), 46, S. 14507-14513
http://dx.doi.org/10.1039/C3TA13491A
Understanding the fast lithium storage performance of hydrogenated TiO 2 nanoparticles. - In: Journal of materials chemistry. Materials for energy and sustainability / Royal Society of Chemistry. - London [u.a.] : RSC, 2013- , ISSN: 2050-7496 , ZDB-ID: 2702232-8, ISSN 2050-7496, Bd. 1 (2013), 46, S. 14507-14513
http://dx.doi.org/10.1039/C3TA13491A
Hiller, Lars;
AlGaN/GaN three-terminal junction devices for rectification and transistor applications on 3C-SiC/Si pseudosubstrates. - In: IEEE transactions on electron devices, ISSN 1557-9646, Bd. 60 (2013), 10, S. 3047-3052
https://doi.org/10.1109/TED.2013.2265741
AlGaN/GaN three-terminal junction devices for rectification and transistor applications on 3C-SiC/Si pseudosubstrates. - In: IEEE transactions on electron devices, ISSN 1557-9646, Bd. 60 (2013), 10, S. 3047-3052
https://doi.org/10.1109/TED.2013.2265741
Quiroz, Pamela;
Halbedel, Bernd;
Kinetic study of crystallization titanium substituted barium hexaferrite in a glassy matrix of the system BaO-Fe 2 O 3 -TiO 2 -B 2 O 3. - In: High temperatures, high pressures, ISSN 0018-1544, Bd. 42 (2013), 4, S. 367-375
Kinetic study of crystallization titanium substituted barium hexaferrite in a glassy matrix of the system BaO-Fe 2 O 3 -TiO 2 -B 2 O 3. - In: High temperatures, high pressures, ISSN 0018-1544, Bd. 42 (2013), 4, S. 367-375
Sippel, Philipp; Albrecht, Wiebke; Mitoraj, Dariusz; Eichberger, Rainer; Hannappel, Thomas; Vanmaekelbergh, Daniel
Two-photon photoemission study of competing auger and surface-mediated relaxation of hot electrons in CdSe quantum dot solids. - In: Nano letters, ISSN 1530-6992, Bd. 13 (2013), 4, S. 1655-1661
http://dx.doi.org/10.1021/nl400113t
Two-photon photoemission study of competing auger and surface-mediated relaxation of hot electrons in CdSe quantum dot solids. - In: Nano letters, ISSN 1530-6992, Bd. 13 (2013), 4, S. 1655-1661
http://dx.doi.org/10.1021/nl400113t
Strothkämper, Christian; Bartelt, Andreas; Sippel, Philipp; Hannappel, Thomas; Schütz, Robert; Eichberger, Rainer
Delayed electron transfer through interface states in hybrid ZnO/organic-dye nanostructures. - In: The journal of physical chemistry. Energy, materials, and catalysis / American Chemical Society. - Washington, DC : Soc., 2007- , ISSN: 1932-7455 , ZDB-ID: 2256522-X, ISSN 1932-7455, Bd. 117 (2013), 35, S. 17901-17908
http://dx.doi.org/10.1021/jp402042a
Delayed electron transfer through interface states in hybrid ZnO/organic-dye nanostructures. - In: The journal of physical chemistry. Energy, materials, and catalysis / American Chemical Society. - Washington, DC : Soc., 2007- , ISSN: 1932-7455 , ZDB-ID: 2256522-X, ISSN 1932-7455, Bd. 117 (2013), 35, S. 17901-17908
http://dx.doi.org/10.1021/jp402042a