Hydrometallurgical flow for zinc recovery from Zn-MnO 2 waste batteries : I. zinc solubilization from anodic remnants. - In: Studia Universitatis Babe¸s-Bolyai, ISSN 0039-3401, Bd. 57 (2012), 2, S. 95-102
Charge separation dynamics at inorganic/organic nanostructured hybrid photovoltaic interfaces. - In: Journal of photonics for energy, ISSN 1947-7988, Bd. 2 (2012), 1, S. 021003-1-021003-8
https://doi.org/10.1117/1.JPE.2.021003
Electrochemical supercapacitors based on a novel graphene/conjugated polymer composite system. - In: Journal of materials chemistry, ISSN 1364-5501, Bd. 22 (2012), 24, S. 12268-12274
http://dx.doi.org/10.1039/C2JM30701D
Zahnräder aus Duroplast-Kunststoffen : Entwicklungsschwerpunkte bei Duroplast-Kunststoffzahnrädern. - In: Konstruktion, ISSN 0373-3300, Bd. 64.2012, 5, S. IW8-IW10
Smooth ceramic titanium nitride contacts on AlGaN/GaN-heterostructures. - In: Semiconductor science and technology, ISSN 1361-6641, Bd. 27 (2012), 11, S. 115007, insges. 6 S.
http://dx.doi.org/10.1088/0268-1242/27/11/115007
Glimmentladungsanalyse (GD-OES) buntgehärteter Stahloberflächen. - In: Materials testing, ISSN 0025-5300, Bd. 54 (2012), 10, S. 707-712
Contactless flow measurement of electrolytes using Lorentz force velocimetry :
Lorentzkraft - Anemometrie für die berührungslose Durchflussmessung von Elektrolyten. - In: Technisches Messen, ISSN 2196-7113, Bd. 79 (2012), 9, S. 399-402
http://dx.doi.org/10.1524/teme.2012.0263
Square wave voltammetric detection of electroactive products resulting from electrochemical nitrate reduction in alkaline media. - In: Journal of electroanalytical chemistry, ISSN 1873-2569, Bd. 675 (2012), S. 32-40
http://dx.doi.org/10.1016/j.jelechem.2012.04.015
Side-gate graphene field-effect transistors with high transconductance. - In: Applied physics letters, ISSN 1077-3118, Bd. 101 (2012), 9, S. 093504, insges. 3 S.
We have fabricated epitaxial side-gate graphene field-effect transistors (FETs) with high transconductance. A side-gate graphene FET with 5560 nm2 active channel dimensions and a lateral gate-channel separation of 95 nm showing a high transconductance of 590 mS/mm is presented. An estimation of the electrostatic gate-channel capacitance of epitaxial side-gate graphene FETs shows that it is in the same order as the electrostatic gate capacitance of common top-gate graphene MOSFETs justifying the high transconductances of our devices. The results of the present paper demonstrate the potential of the side-gate architecture for graphene transistors.
http://dx.doi.org/10.1063/1.4748112
Multi-scale simulation of nucleation and growth of nanoscale SiC on Si . - In: Journal of computational and theoretical nanoscience, ISSN 1546-1963, Bd. 9 (2012), 11, S. 1941-1966
http://dx.doi.org/10.1166/jctn.2012.2601