Low-temperature solution syntheses and structure control of AM2O8 oxide powders (A=Zr, Hf; M=Mo, W): a review. - In: Gui suan yan xue bao, ISSN 0454-5648, Bd. 37 (2009), 5, S. 667-674
Nickelschichten im Durchzugsverfahren : Untersuchungen zur Abscheidung von Metallschichten auf Stahlrohren unter Strömungsbedingungen. - In: Metalloberfläche, ISSN 0026-0797, Bd. 63 (2009), 4, S. 37-39
Formation and characterization of NaCl-type FeC. - In: Materials letters, ISSN 1873-4979, Bd. 63 (2009), 16, S. 1445-1447
http://dx.doi.org/10.1016/j.matlet.2009.03.036
Diffusion, convection, and solidification in cw-mode free electron laser nitrided titanium. - In: Journal of applied physics, ISSN 1089-7550, Bd. 105 (2009), 8, 083503, insges. 6 S.
Titanium sheets were irradiated by free electron laser radiation in cw mode in pure nitrogen. Due to the interaction, nitrogen diffusion occurs and titanium nitride was synthesized in the tracks. Overlapping tracks have been utilized to create coatings in order to improve the tribological properties of the sheets. Caused by the local heating and the spatial dimension of the melt pool, convection effects were observed and related to the track properties. Stress, hardness, and nitrogen content were investigated with x-ray diffraction, nanoindention, and resonant nuclear reaction analysis. The measured results were correlated with the scan parameters, especially to the lateral track shift. Cross section micrographs were prepared and investigated by means of scanning electron microscopy. They show the solidification behavior, phase formation, and the nitrogen distribution. The experiments give an insight into the possibilities of materials processing using such a unique heat source.
https://doi.org/10.1063/1.3097781
Nitrided amorphous stainless steel coatings deposited by reactive magnetron sputtering from an austenitic stainless steel target. - In: Advanced engineering materials, ISSN 1527-2648, Bd. 11 (2009), 1/2, S. 17-25
Stainless steel films were reactively magnetron sputtered in argon/nitrogen gas flow onto oxidized silicon wafers using austenitic AISI 316 stainless-steel targets. The deposited films of about 300 nm thickness were characterized by conversion electron Mössbauer spectroscopy, magneto-optical Kerreffect, X-ray diffraction, Rutherford backscattering spectrometry, and resonant nuclear reaction analysis. These complementary methods were used for a detailed examination of the nitriding effects for the sputtered stainless-steel films. The formation of an amorphous and soft ferromagnetic phase in a wide range of the processing parameters was found. Further, the influence of postvacuum-annealing was examined by perturbed angular correlation to achieve a comprehensive understanding of the nitriding process and phase formation. The amorphous phase is not very stable and crystallization can be observed at 973 K.
https://doi.org/10.1002/adem.200800228
Preparation of zirconium tungstate (ZrW 2 O 8 ) by the amorphous citrate process. - In: Ceramics international, ISSN 1873-3956, Bd. 35 (2009), 2, S. 755-762
https://doi.org/10.1016/j.ceramint.2008.02.010
Amorphous stainless steel coatings prepared by reactive magnetron-sputtering from austenitic stainless steel targets. - In: Applied physics, ISSN 1432-0630, Bd. 94 (2009), 1, S. 139-154
Stainless steel films were reactively magnetron sputtered in argon/methane gas flow onto oxidized silicon wafers using austenitic stainless-steel targets. The deposited films of about 200 nm thickness were characterized by conversion electron Mössbauer spectroscopy, magnetooptical Kerr-effect, X-ray diffraction, scanning electron microscopy, Rutherford backscattering spectrometry, atomic force microscopy, corrosion resistance tests, and Raman spectroscopy. These complementary methods were used for a detailed examination of the carburization effects in the sputtered stainless-steel films. The formation of an amorphous and soft ferromagnetic phase in a wide range of the processing parameters was found. Further, the influence of the substrate temperature and of post vacuum-annealing were examined to achieve a comprehensive understanding of the carburization process and phase formation.
http://dx.doi.org/10.1007/s00339-008-4685-x
Microstructure and wear-resistance of APS alumina on steel. - In: Journal for electrochemistry and plating technology, ISSN 2196-0267, Bd. 1 (2008), 1, S. 25-38
http://dx.doi.org/10.12850/ISSN2196-0267.JEPT1397
Systematic characterization of embossing processes for LTCC tapes. - In: Journal of microelectronics and electronic packaging, ISSN 1551-4897, Bd. 5 (2008), 4, S. 142-149
Embossing of LTCC green tapes allows the defined patterning of conductor paths and fluidic channels with excellent edge moulding. However, basic process settings have not systematically been investigated up to now. We present a comprehensive overview, regarding basic process variables and new manufacturing approaches. Because the moulding quality depends on the visco-elastic properties of the tape, rheological measurements were carried out. The influence of the basic process parameters, that is, temperature, pressure, time and friction were investigated systematically under the use of design of experiments. The influence of these parameters on the forming of micro patterns down to 10 ?m was investigated, as also where the stress of the tape caused by the plastic deformation, the accuracy of edge moulding and the demoulding behaviour of embossed tape. Optimum parameters were derived. From Analysis of Variances it is clear that the friction exerts the most important influence on the moulding of fine patterns. Position tolerances of embossed patterns were determined and relaxation effects studied in order to ensure stable process conditions. It was possible to improve the leakage characteristics of valve seats by making use of embossed patterns like smoothed metallization and 3-dimensional sealing ring. The leakage characteristic of valve seats could be improved by the factor of four.
Polarization induced effects in GaN-based heterostructures and novel sensors. - In: Polarization effects in semiconductors, (2008), S. 27-109