Weak conducting material melt flow in crossed EM fields. - In: Przeglad elektrotechniczny, ISSN 0033-2097, Bd. 84 (2008), 11, S. 175-179
Herstellung von Mikroventilbauteilen für magnetische Mikroantriebe. - In: Galvanotechnik, ISSN 0016-4232, Bd. 99 (2008), 12, S. 3084-3088
Verkupfern textiler Materialien. - In: Melliand-Textilberichte, ISSN 0341-0781, Bd. 89 (2008), 10, S. 386-387
Investigation of NiOx-based contacts on p-GaN. - In: Journal of materials science. . - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990- , ISSN: 1573-482X , ZDB-ID: 2016994-2, ISSN 1573-482X, Bd. 19 (2008), 8/9, S. 855-862
http://dx.doi.org/10.1007/s10854-007-9520-1
Integration of thin-film-fracture-based nanowires into microchip fabrication. - In: Small, ISSN 1613-6829, Bd. 4 (2008), 12, S. 2214-2221
http://dx.doi.org/10.1002/smll.200800228
TiN-coating formation by pulsed Nd:YAG laser irradiation of titanium in nitrogen. - In: Journal of coatings technology and research, ISSN 1935-3804, Bd. 5 (2008), 4, S. 505-512
Titanium was treated by pulsed Nd:YAG laser irradiation in nitrogen atmosphere, which led to nitrogen in-diffusion and TiN coating formation. The thickness of the TiN films was about 1.2 æm and the coatings had a universal hardness of about 11 GPa. The layers were investigated by X-ray diffraction at grazing incidence and resonant nuclear reaction analysis for nitrogen depth profiling. Fitting of the experimental depth profiles gave information about the physical processes (diffusion time and depth) with respect to the achieved hardness. The microscopic properties like lattice constants and the variation of the nitrogen content were evaluated. A relationship between laser scan parameters and coating properties could be revealed. Thus, it was possible to determine the physical limits such as film thickness, nitrogen content, and hardness of this direct laser synthesis. Keywords: Titanium, Hardness, Melting depth, Laser synthesis, Titanium nitride, Coatings
https://doi.org/10.1007/s11998-008-9093-9
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide. - In: Crystal growth & design, ISSN 1528-7505, Bd. 8 (2008), 4, S. 1257-1260
http://dx.doi.org/10.1021/cg700910n
Surface morphology of Ge-modified 3C-SiC/Si films. - In: Surface and interface analysis, ISSN 1096-9918, Bd. 40 (2008), 9, S. 1310-1317
http://dx.doi.org/10.1002/sia.2895
Buried melting in germanium implanted silicon by millisecond flash lamp annealing. - In: Applied physics letters, ISSN 1077-3118, Bd. 93 (2008), 15, S. 151903, insges. 3 S.
http://dx.doi.org/10.1063/1.2993332
Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method. - In: Technical physics, ISSN 1090-6525, Bd. 53 (2008), 11, S. 1490-1503
http://dx.doi.org/10.1134/S1063784208110157