Publikationen

In this work, an electrochemically formed porous Cu current collector (p-Cu) is utilized for the development of a high-performance binder-free silicon anode. Two electrolyte compositions based on sulfolane (SL) and [BMP][TFSI] ionic liquid (IL) are implemented for silicon deposition. The electrochemical experiments confirm the advantages of applying the p-Cu structure in terms of specific capacity, rate capability, and long-term cycling, where the best electrochemical properties have been observed for the Si deposited from SL electrolyte. The Si-based p-Cu anodes formed in SL display stable 2500 mAh g^-1 reversible capacity during the first 250 cycles and promising capacity retention. Compared to this result, the cycling performance of the same type of material deposited on flat Cu foil (f-Cu) showed significantly reduced capacity (1400 mAh g^-1) and inferior cycling performance. The positive effect can be attributed to the improved mechanical stability of the active material and accelerated ionic transport in the porous structure of the anode. The improved functional properties of the electrochemically deposited Si from SL electrolyte in p-Cu samples compared to those obtained in IL can be ascribed to differences in the chemical composition. While the layers deposited in SL electrolyte involve Si domains incorporated in a matrix containing C and O that offer high mechanical stability, the Si material obtained in IL is additionally influenced by N and F chemical species, resulting from active IL decomposition. These differences in the chemical surrounding of the Si domains are the primary reason for the inferior electrochemical performance of the material deposited from [BMP][TFSI] electrolyte. XPS analysis shows that the initial composition of the as deposited layers, containing a considerable amount of elemental Si, is changed after lithiation and that the electrochemical activity of the anode is governed by switching between the intermediate redox states of Si, where the carbon-oxygen matrix is also involved.

The photoelectrochemical (PEC) properties of sputtered aluminum doped hydrogenated amorphous silicon carbide thin films grown on p-type crystalline silicon substrates were investigated in 1 M solution under chopped light illumination. Optical and structural properties of the top absorber layer were systematically assessed after post-deposition isochronical annealing treatments. Samples exhibited a noticeable improvement of the opto-electronic properties after thermal treatments. In addition, an abrupt enhancement of the photocurrent was observed reaching a saturation value of 17 mA cm^-2 at -1.75 V vs. Ag/AgCl (3.5 M KCl). In this research we propose that this enhancement effect is associated to a charge transfer kinetic mechanism influenced by surface states and the p-type substrate. The latter most likely due to the space charge region extending beyond the absorber layer reaching the substrate. Current density-potential and electrochemical impedance spectroscopy measurements in dark revealed a reduction of the native layer at cathodic potentials higher than -1 V vs. Ag/AgCl (3.5 M KCl), which contributes to the high charge transfer kinetic of the system. We believe that these results will contribute to understand the substrate influence in the PEC performance of top absorber layers in multilayer structures for solar water splitting.

Polyelectrolyte layer-by-layer assemblies are known as protective coatings for corrosion inhibition. Here, we demonstrate that polyelectrolyte multilayers of poly(ethyleneimine) (PEI) and poly(styrene sulfonate) (PSS)-(PEI/PSS)x-adsorbed at the GaP(100) photocathode surface remarkably mitigate the photocorrosion of GaP without decreasing its photoconversion efficiency. The activity of the polybase-polyacid complex is based on buffering pH changes at the solid-liquid interface. We carried out ab initio molecular dynamics-based simulations of the GaP(100) surface in contact with liquid water and demonstrated that an increase in the proton concentration enhances GaP dissolution. We used the scanning vibrating electrode technique (SVET) to characterize the distribution of photocorrosion activity areas over bare and polyelectrolyte-coated GaP surfaces and we showed that a polyelectrolyte coating impedes the dissolution kinetics. Data obtained using the SVET were compared to photoetched pores on the semiconductor surface. Voltammetric and chronoamperometric measurements were also performed to evaluate photoconversion efficiencies before and after the application of the protective coatings.

MAX phase thin films have been synthesized by thermal treatment of a Ti-Al-C multilayer system. The preparation of the multilayer system was carried out via magnetron sputtering. Based on the thickness ratio among the individual nanoscale monolayers (Ti, Al, C), the resulting MAX phase stoichiometry can be controlled. This paper describes the synthesis of both Ti2AlC and Ti3AlC2 MAX phases from the same precursor multilayer system which is composed of a sequence of Ti/Al/C pure elemental single layers with thicknesses of 14, 6, and 3.5 nm, respectively. This sequence is repeated 22 times with a total thickness of around 500 nm. Rapid thermal treatment tests were performed to study the phase development. The Ti2AlC MAX phase forms in a temperature range below 850 ˚C, whereas the Ti3AlC2 MAX phase starts to form at temperatures above 850 ˚C and reaches its highest phase purity at 950 ˚C. The thin film structures were studied by X-ray diffraction and Raman spectroscopy. Furthermore, the electrical and mechanical properties were investigated to gain more insights regarding the phase transformation and their influence on the thin film properties.