Cengher, Dorin; Hatzopoulos, Z.; Gallis, S.; Deligeorgis, G.; Aperathitis, E.; Androulidaki, M.; Alexe, M.; Dragoi, V.; Kyriakis-Bitzaros, E. D.; Halkias, G.
Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers. - In: Journal of crystal growth, Bd. 251 (2003), 1/4, S. 754-759
http://dx.doi.org/10.1016/S0022-0248(02)02218-2
Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers. - In: Journal of crystal growth, Bd. 251 (2003), 1/4, S. 754-759
http://dx.doi.org/10.1016/S0022-0248(02)02218-2
Joshi, N. V.; Medina, H.; Cantarero, Andres; Ambacher, Oliver
Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor. - In: Journal of physics and chemistry of solids, Bd. 64 (2003), 9/10, S. 1685-1689
http://dx.doi.org/10.1016/S0022-3697(03)00070-2
Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor. - In: Journal of physics and chemistry of solids, Bd. 64 (2003), 9/10, S. 1685-1689
http://dx.doi.org/10.1016/S0022-3697(03)00070-2
Graf, T.; Gjukic, M.; Görgens, L.; Ambacher, Oliver; Brandt, M. S.; Stutzmann, Martin
Charge transfer at the Mn acceptor level in GaN. - In: Journal of superconductivity, ISSN 1572-9605, Bd. 16 (2003), 1, S. 83-86
http://dx.doi.org/10.1023/A:1023288718903
Charge transfer at the Mn acceptor level in GaN. - In: Journal of superconductivity, ISSN 1572-9605, Bd. 16 (2003), 1, S. 83-86
http://dx.doi.org/10.1023/A:1023288718903
Dimakis, E.; Georgakilas, A.; Androulidaki, M.; Tsagaraki, K.; Kittler, Gabriel; Kalaitzakis, F.; Cengher, Dorin; Bellet-Amalric, E.; Jalabert, D.; Pelekanos, Nikos T.
Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence. - In: Journal of crystal growth, Bd. 251 (2003), 1/4, S. 476-480
http://dx.doi.org/10.1016/S0022-0248(02)02275-3
Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence. - In: Journal of crystal growth, Bd. 251 (2003), 1/4, S. 476-480
http://dx.doi.org/10.1016/S0022-0248(02)02275-3
Kassamakova-Kolaklieva, L.; Kakanakov, Roumen; Cimalla, Volker; Hristeva, N.; Lepoeva, G.; Kuznetsov, N.; Zekentes, K.
Pd-based ohmic contacts to LPE 4H-SiC with improved thermal stability. - In: Silicon carbide and related materials 2002, (2003), S. 713-716
Pd-based ohmic contacts to LPE 4H-SiC with improved thermal stability. - In: Silicon carbide and related materials 2002, (2003), S. 713-716
Georgi, Christian; Krüger, Horst-Günter; Kern, Heinrich
Herstellung oxidischer faserverstärkter Verbundwerkstoffe durch elektrophoretische Infiltration. - In: Verbundwerkstoffe, (2003), S. 389-393
Herstellung oxidischer faserverstärkter Verbundwerkstoffe durch elektrophoretische Infiltration. - In: Verbundwerkstoffe, (2003), S. 389-393
Georgi, Christian; Krüger, Horst-Günter; Kern, Heinrich
Oxide-oxide CMCS prepared by electrophoretic infiltration (EPI) of Nextel preforms. - In: ICCM-14, (2003), insges. 6 S.
Oxide-oxide CMCS prepared by electrophoretic infiltration (EPI) of Nextel preforms. - In: ICCM-14, (2003), insges. 6 S.
Cimalla, Volker; Förster, Christian; Kittler, Gabriel; Cimalla, Irina Nicoleta; Kosiba, Rastislav; Ecke, Gernot; Ambacher, Oliver; Goldhahn, Rüdiger; Žochovec, Svjatoslav; Georgakilas, A.; Lu, Hai; Schaff, William
Correlation between strain, optical and electrical properties of InN grown by MBE. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 7, S. 2818-2821
http://dx.doi.org/10.1002/pssc.200303419
Correlation between strain, optical and electrical properties of InN grown by MBE. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 7, S. 2818-2821
http://dx.doi.org/10.1002/pssc.200303419
Miskys, Claudio R.; Kelly, Michael K.; Ambacher, Oliver; Stutzmann, Martin
Freestanding GaN-substrates and devices. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 6, S. 1627-1650
http://dx.doi.org/10.1002/pssc.200303140
Freestanding GaN-substrates and devices. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 6, S. 1627-1650
http://dx.doi.org/10.1002/pssc.200303140
Ambacher, Oliver; Eickhoff, Martin; Link, Angela; Hermann, Martin; Stutzmann, Martin; Bernardini, F.; Fiorentini, V.; Smorchkova, Y.; Speck, James; Mishra, Umesh; Schaff, William; Tilak, V.; Eastman, Lester F.
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures, Part A: polarization and pyroelectronics. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 6, S. 1878-1907
http://dx.doi.org/10.1002/pssc.200303138
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures, Part A: polarization and pyroelectronics. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 6, S. 1878-1907
http://dx.doi.org/10.1002/pssc.200303138