Steidl, Matthias;
Koppka, Christian; Winterfeld, Lars; Peh, Katharina; Kleinschmidt, Peter; Hannappel, Thomas
Impact of rotational twin boundaries of GaP/Si(111) substrates on III-V nanowire growth. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM), (2017), HL 63.76
Impact of rotational twin boundaries of GaP/Si(111) substrates on III-V nanowire growth. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM), (2017), HL 63.76
Fischer, Peter; Rösch, Roland; Alam, Shahidul; Schubert, Ulrich; Hoppe, Harald; Rädlein, Edda
Influence of annealing on the conductivity and transparency of niobium doped titanium dioxide electrodes prepared by sol-gel and their function in organic solar cells. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM), (2017), DS 32.7
Influence of annealing on the conductivity and transparency of niobium doped titanium dioxide electrodes prepared by sol-gel and their function in organic solar cells. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM), (2017), DS 32.7
Tucto Salinas, Karem Yoli; Flores Escalante, Loreleyn F.; Guerra Torres, Jorge Andres; Grieseler, Rolf; Kups, Thomas; Pezoldt, Jörg; Osvet, Andres; Batentschuk, Miroslaw; Weingärtner, Roland
Effect of post-annealing treatment on the structure and luminescence properties of AIN:Tb3+ thin films prepared by radio frequency magnetron sputtering. - In: Materials science forum, ISSN 1662-9752, Bd. 890 (2017), S. 299-302
Im Titel ist "3+" hochgestellt
https://doi.org/10.4028/www.scientific.net/MSF.890.299
Effect of post-annealing treatment on the structure and luminescence properties of AIN:Tb3+ thin films prepared by radio frequency magnetron sputtering. - In: Materials science forum, ISSN 1662-9752, Bd. 890 (2017), S. 299-302
Im Titel ist "3+" hochgestellt
https://doi.org/10.4028/www.scientific.net/MSF.890.299
Hähnlein, Bernd;
Kovac, Jaroslav; Pezoldt, Jörg
Size effect of the silicon carbide Young's modulus. - In: Physica status solidi, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600390, insges. 9 S.
https://doi.org/10.1002/pssa.201600390
Size effect of the silicon carbide Young's modulus. - In: Physica status solidi, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600390, insges. 9 S.
https://doi.org/10.1002/pssa.201600390
Jatal, Wael; Baumann, Uwe; Jacobs, Heiko O.; Schwierz, Frank; Pezoldt, Jörg
Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600415, insges. 7 S.
https://doi.org/10.1002/pssa.201600415
Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600415, insges. 7 S.
https://doi.org/10.1002/pssa.201600415
Jatal, Wael; Hörselmann, Ingo; Jacobs, Heiko O.; Schwierz, Frank; Pezoldt, Jörg
AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600416, insges. 6 S.
https://doi.org/10.1002/pssa.201600416
AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600416, insges. 6 S.
https://doi.org/10.1002/pssa.201600416
Paszuk, Agnieszka; Dobrich, Anja; Koppka, Christian; Brückner, Sebastian; Duda, Marek; Kleinschmidt, Peter; Supplie, Oliver; Hannappel, Thomas
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient. - In: Journal of crystal growth, Bd. 464 (2017), S. 14-19
http://dx.doi.org/10.1016/j.jcrysgro.2016.11.109
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient. - In: Journal of crystal growth, Bd. 464 (2017), S. 14-19
http://dx.doi.org/10.1016/j.jcrysgro.2016.11.109
Dyck, Tobias;
Bund, Andreas
Auslegung von Kontaktsystemen mit galvanischen Zinnschichten unter Berücksichtigung der elektrischen und tribologischen Eigenschaften. - In: Elektrische und optische Verbindungstechnik 2017, (2017), S. 129-146
Auslegung von Kontaktsystemen mit galvanischen Zinnschichten unter Berücksichtigung der elektrischen und tribologischen Eigenschaften. - In: Elektrische und optische Verbindungstechnik 2017, (2017), S. 129-146
Supplie, Oliver; Romanyuk, Oleksandr; Susi, Toma; May, Matthias M.; Hannappel, Thomas
Spectroscopic studies of buried GaP/Si(100) heterointerfaces. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM), (2017), HL 84.8
Spectroscopic studies of buried GaP/Si(100) heterointerfaces. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM), (2017), HL 84.8
Koppka, Christian; Winterfeld, Lars; Steidl, Matthias; Paszuk, Agnieszka; Kleinschmidt, Peter; Runge, Erich; Hannappel, Thomas
The importance of interface step configurations in the GaP/Si(111):As system: towards a growth model for twin domain formation. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM), (2017), HL 84.9
The importance of interface step configurations in the GaP/Si(111):As system: towards a growth model for twin domain formation. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section (SKM), (2017), HL 84.9