Wegfraß, André; Diethold, Christian; Werner, Michael; Alferenok, Artem; Resagk, Christian; Fröhlich, Thomas; Halbedel, Bernd; Lüdtke, Ulrich; Thess, André
Contactless flow measurement of electrolytes using Lorentz force velocimetry :
Lorentzkraft - Anemometrie für die berührungslose Durchflussmessung von Elektrolyten. - In: Technisches Messen, ISSN 2196-7113, Bd. 79 (2012), 9, S. 399-402
http://dx.doi.org/10.1524/teme.2012.0263
Contactless flow measurement of electrolytes using Lorentz force velocimetry :
Lorentzkraft - Anemometrie für die berührungslose Durchflussmessung von Elektrolyten. - In: Technisches Messen, ISSN 2196-7113, Bd. 79 (2012), 9, S. 399-402
http://dx.doi.org/10.1524/teme.2012.0263
Cuibus, Florina Maria; Ispas, Adriana; Bund, Andreas; Ilea, Petru
Square wave voltammetric detection of electroactive products resulting from electrochemical nitrate reduction in alkaline media. - In: Journal of electroanalytical chemistry, ISSN 1873-2569, Bd. 675 (2012), S. 32-40
http://dx.doi.org/10.1016/j.jelechem.2012.04.015
Square wave voltammetric detection of electroactive products resulting from electrochemical nitrate reduction in alkaline media. - In: Journal of electroanalytical chemistry, ISSN 1873-2569, Bd. 675 (2012), S. 32-40
http://dx.doi.org/10.1016/j.jelechem.2012.04.015
Hähnlein, Bernd; Händel, Benjamin; Pezoldt, Jörg; Töpfer, Hannes; Granzner, Ralf; Schwierz, Frank
Side-gate graphene field-effect transistors with high transconductance. - In: Applied physics letters, ISSN 1077-3118, Bd. 101 (2012), 9, S. 093504, insges. 3 S.
http://dx.doi.org/10.1063/1.4748112
Side-gate graphene field-effect transistors with high transconductance. - In: Applied physics letters, ISSN 1077-3118, Bd. 101 (2012), 9, S. 093504, insges. 3 S.
We have fabricated epitaxial side-gate graphene field-effect transistors (FETs) with high transconductance. A side-gate graphene FET with 5560 nm2 active channel dimensions and a lateral gate-channel separation of 95 nm showing a high transconductance of 590 mS/mm is presented. An estimation of the electrostatic gate-channel capacitance of epitaxial side-gate graphene FETs shows that it is in the same order as the electrostatic gate capacitance of common top-gate graphene MOSFETs justifying the high transconductances of our devices. The results of the present paper demonstrate the potential of the side-gate architecture for graphene transistors.
http://dx.doi.org/10.1063/1.4748112
Pezoldt, Jörg; Kulikov, Dmitri V.; Kharlamov, Vladimir S.; Lubov, Maxim N.; Trushin, Yuri V.
Multi-scale simulation of nucleation and growth of nanoscale SiC on Si . - In: Journal of computational and theoretical nanoscience, ISSN 1546-1963, Bd. 9 (2012), 11, S. 1941-1966
http://dx.doi.org/10.1166/jctn.2012.2601
Multi-scale simulation of nucleation and growth of nanoscale SiC on Si . - In: Journal of computational and theoretical nanoscience, ISSN 1546-1963, Bd. 9 (2012), 11, S. 1941-1966
http://dx.doi.org/10.1166/jctn.2012.2601
Ispas, Adriana;
Bund, Andreas
Pulse plating of tantalum from 1-butyl-1-methyl-pyrrolidinium bis(trifluoromethylsulfonyl)amide ionic liquids. - In: Transactions of the Institute of Metal Finishing, ISSN 1745-9192, Bd. 90 (2012), 6, S. 298-304
https://doi.org/10.1179/0020296712Z.00000000058
Pulse plating of tantalum from 1-butyl-1-methyl-pyrrolidinium bis(trifluoromethylsulfonyl)amide ionic liquids. - In: Transactions of the Institute of Metal Finishing, ISSN 1745-9192, Bd. 90 (2012), 6, S. 298-304
https://doi.org/10.1179/0020296712Z.00000000058
Hochmuth, Andreas; Rädlein, Edda; Conradt, Reinhard; Prange, Andreas; Djambazov, Peter
Creating a three component model glass surface with sol-gel chemistry : a way to difficult meltable glass. - In: Journal of the University of Chemical Technology and Metallurgy, ISSN 1311-7629, Bd. 47 (2012), 4, S. 387-391
Creating a three component model glass surface with sol-gel chemistry : a way to difficult meltable glass. - In: Journal of the University of Chemical Technology and Metallurgy, ISSN 1311-7629, Bd. 47 (2012), 4, S. 387-391
Cârâc, Geta; Ispas, Adriana
Effect of nano-Al 2 O 3 particles and of the Co concentration on the corrosion behavior of electrodeposited Ni-Co alloys. - In: Journal of solid state electrochemistry, ISSN 1433-0768, Bd. 16 (2012), 11, S. 3457-3465
http://dx.doi.org/10.1007/s10008-012-1909-y
Effect of nano-Al 2 O 3 particles and of the Co concentration on the corrosion behavior of electrodeposited Ni-Co alloys. - In: Journal of solid state electrochemistry, ISSN 1433-0768, Bd. 16 (2012), 11, S. 3457-3465
http://dx.doi.org/10.1007/s10008-012-1909-y
Bund, Andreas;
Waldfried Plieth: a tribute on the occasion of his 75th birthday. - In: Journal of solid state electrochemistry, ISSN 1433-0768, Bd. 16 (2012), 11, S. 3399-3400
http://dx.doi.org/10.1007/s10008-012-1875-4
Waldfried Plieth: a tribute on the occasion of his 75th birthday. - In: Journal of solid state electrochemistry, ISSN 1433-0768, Bd. 16 (2012), 11, S. 3399-3400
http://dx.doi.org/10.1007/s10008-012-1875-4
Mutschke, Gerd; Tschulik, Kristina; Uhlemann, Margitta; Bund, Andreas; Fröhlich, Jochen
Comment on "Magnetic Structuring of Electrodeposits". - In: Physical review letters, ISSN 1079-7114, Bd. 109 (2012), 22, 229401, insges. 1 S.
https://doi.org/10.1103/PhysRevLett.109.229401
Comment on "Magnetic Structuring of Electrodeposits". - In: Physical review letters, ISSN 1079-7114, Bd. 109 (2012), 22, 229401, insges. 1 S.
https://doi.org/10.1103/PhysRevLett.109.229401
Knöbber, Fabian; Zürbig, Verena; Heidrich, Nicola; Hees, Jakob; Sah, Ram Ekwal; Baeumler, Martina; Leopold, Steffen; Pätz, Daniel; Ambacher, Oliver; Lebedev, Vadim
Static and dynamic characterization of AlN and nanocrystalline diamond membranes. - In: Physica status solidi, ISSN 1862-6319, Bd. 209 (2012), 10, S. 1835-1842
http://dx.doi.org/10.1002/pssa.201228180
Static and dynamic characterization of AlN and nanocrystalline diamond membranes. - In: Physica status solidi, ISSN 1862-6319, Bd. 209 (2012), 10, S. 1835-1842
http://dx.doi.org/10.1002/pssa.201228180