Dong, Huishuang; Xu, Yang; Zhang, Chenglin; Wu, Yuhan; Zhou, Min; Liu, Long; Dong, Yulian; Fu, Qun; Wu, Minghong; Lei, Yong
MoS2 nanosheets with expanded interlayer spacing for enhanced sodium storage. - In: Inorganic chemistry frontiers, ISSN 2052-1553, Bd. 5 (2018), 12, S. 3099-3105
Im Titel ist "2" tiefgestellt
https://doi.org/10.1039/C8QI00969D
MoS2 nanosheets with expanded interlayer spacing for enhanced sodium storage. - In: Inorganic chemistry frontiers, ISSN 2052-1553, Bd. 5 (2018), 12, S. 3099-3105
Im Titel ist "2" tiefgestellt
https://doi.org/10.1039/C8QI00969D
Fluhr, Daniel;
Züfle, Simon; Muhsin, Burhan; Öttking, Rolf; Seeland, Marco; Rösch, Roland; Schubert, Ulrich Sigmar; Ruhstaller, Beat; Krischok, Stefan; Hoppe, Harald
Aluminum electrode insulation dynamics via interface oxidation by reactant diffusion in organic layers. - In: Physica status solidi, ISSN 1862-6319, Bd. 215 (2018), 23, S. 1800474, insges. 10 S.
https://doi.org/10.1002/pssa.201800474
Aluminum electrode insulation dynamics via interface oxidation by reactant diffusion in organic layers. - In: Physica status solidi, ISSN 1862-6319, Bd. 215 (2018), 23, S. 1800474, insges. 10 S.
https://doi.org/10.1002/pssa.201800474
Winterfeld, Lars; Koppka, Christian; Abou-Ras, Daniel; Kleinschmidt, Peter; Supplie, Oliver; Hannappel, Thomas; Runge, Erich
Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111). - In: Physical review materials, ISSN 2475-9953, Bd. 2 (2018), 12, S. 124601
https://doi.org/10.1103/PhysRevMaterials.2.124601
Mechanism of twin-reduced III-V epitaxy on As-modified vicinal Si(111). - In: Physical review materials, ISSN 2475-9953, Bd. 2 (2018), 12, S. 124601
https://doi.org/10.1103/PhysRevMaterials.2.124601
Supplie, Oliver;
Heinisch, Alexander; Sugiyama, Masakazu; Hannappel, Thomas
Optical in situ quantification of the Arsenic content in GaAsP graded buffer layers for III-V-on-Si tandem absorbers during MOVPE growth. - In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), ISBN 978-1-5386-8529-7, (2018), S. 3923-3926
https://doi.org/10.1109/PVSC.2018.8547955
Optical in situ quantification of the Arsenic content in GaAsP graded buffer layers for III-V-on-Si tandem absorbers during MOVPE growth. - In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), ISBN 978-1-5386-8529-7, (2018), S. 3923-3926
https://doi.org/10.1109/PVSC.2018.8547955
Paszuk, Agnieszka;
Supplie, Oliver; Nandy, Manali; Brückner, Sebastian; Dobrich, Anja; Kleinschmidt, Peter; Kim, Boram; Nakano, Yoshiaki; Sugiyama, Masakazu; Hannappel, Thomas
As-modified Si(100) surfaces for III-V-on-Si tandem solar cells. - In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), ISBN 978-1-5386-8529-7, (2018), S. 0233-0236
https://doi.org/10.1109/PVSC.2018.8547817
As-modified Si(100) surfaces for III-V-on-Si tandem solar cells. - In: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), ISBN 978-1-5386-8529-7, (2018), S. 0233-0236
https://doi.org/10.1109/PVSC.2018.8547817
Nägelein, Andreas;
Steidl, Matthias; Korte, Stefan; Voigtländer, Bert; Prost, Werner; Kleinschmidt, Peter; Hannappel, Thomas
Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope. - In: Nano research, ISSN 1998-0000, Bd. 11 (2018), 11, S. 5924-5934
https://doi.org/10.1007/s12274-018-2105-x
Investigation of charge carrier depletion in freestanding nanowires by a multi-probe scanning tunneling microscope. - In: Nano research, ISSN 1998-0000, Bd. 11 (2018), 11, S. 5924-5934
https://doi.org/10.1007/s12274-018-2105-x
Eckstein, Marco; Koppka, Christian; Thiele, Sebastian; Mi, Yan; Xu, Rui; Lei, Yong; Hähnlein, Bernd; Schwierz, Frank; Pezoldt, Jörg
MOCVD compatible atomic layer deposition process of Al2O3 on SiC and graphene/SiC heterostructures. - In: Silicon carbide and related materials 2017, (2018), S. 506-510
Im Titel sind "2" und "3" tiefgestellt
MOCVD compatible atomic layer deposition process of Al2O3 on SiC and graphene/SiC heterostructures. - In: Silicon carbide and related materials 2017, (2018), S. 506-510
Im Titel sind "2" und "3" tiefgestellt
Li, Wei; Yue, Zhen; Lozovoi, Artur; Petrov, Oleg; Mattea, Carlos; Stapf, Siegfried
Heterogeneous distribution of chain mobility in nascent UHMWPE in the less entangled state. - In: Journal of polymer research, ISSN 1572-8935, Bd. 25 (2018), 11, Article 239, insges. 8 S.
https://doi.org/10.1007/s10965-018-1637-9
Heterogeneous distribution of chain mobility in nascent UHMWPE in the less entangled state. - In: Journal of polymer research, ISSN 1572-8935, Bd. 25 (2018), 11, Article 239, insges. 8 S.
https://doi.org/10.1007/s10965-018-1637-9
Hübner, Matthias; Kröger, Jörg
Experimental verification of the adiabatic transfer in Wilberforce pendulum normal modes. - In: American journal of physics, ISSN 1943-2909, Bd. 86 (2018), 11, S. 818-824
https://doi.org/10.1119/1.5051179
Experimental verification of the adiabatic transfer in Wilberforce pendulum normal modes. - In: American journal of physics, ISSN 1943-2909, Bd. 86 (2018), 11, S. 818-824
https://doi.org/10.1119/1.5051179
Feifel, Markus; Ohlmann, Jens; Benick, Jan; Hermle, Martin; Belz, Jürgen; Beyer, Andreas; Volz, Kerstin; Hannappel, Thomas; Bett, Andreas W.; Lackner, David; Dimroth, Frank
Direct growth of III-V/silicon triple-junction solar cells with 19.7% efficiency. - In: IEEE journal of photovoltaics, ISSN 2156-3403, Bd. 8 (2018), 6, S. 1590-1595
https://doi.org/10.1109/JPHOTOV.2018.2868015
Direct growth of III-V/silicon triple-junction solar cells with 19.7% efficiency. - In: IEEE journal of photovoltaics, ISSN 2156-3403, Bd. 8 (2018), 6, S. 1590-1595
https://doi.org/10.1109/JPHOTOV.2018.2868015