Facile synthesis of hierarchical fern leaf-like Sb and its application as an additive-free anode for fast reversible Na-ion storage. - In: Journal of materials chemistry, ISSN 2050-7496, Bd. 5 (2017), 4, S. 1749-1755
https://doi.org/10.1039/C6TA10345F
Multiple nanostructures based on anodized aluminium oxide templates. - In: Nature nanotechnology, ISSN 1748-3395, Bd. 12 (2017), 3, S. 244-250
http://dx.doi.org/10.1038/nnano.2016.257
Three-dimensional lima¸con: properties and applications. - In: Physical review, ISSN 2469-9934, Bd. 95 (2017), 1, 011801, insges. 6 S.
https://doi.org/10.1103/PhysRevA.95.011801
Surface composition of [BMP][Tf2N] and [PMIm][Tf2N] in the presence of NbF5 and TaF5 : a photoelectron spectroscopy study. - In: Journal of molecular liquids, ISSN 1873-3166, Bd. 226 (2017), S. 78-84
Im Titel sind "2" und "5" tiefgestellt
http://dx.doi.org/10.1016/j.molliq.2016.08.075
Amorphous TiO2 inverse opal anode for high-rate sodium ion batteries. - In: Nano energy, ISSN 2211-2855, Bd. 31 (2017), S. 514-524
Im Titel ist "2" tiefgestellt
http://dx.doi.org/10.1016/j.nanoen.2016.12.005
Tunable emission and conductivity enhancement by tellurium doping in CdS nanowires for optoelectronic applications. - In: Physica, ISSN 1386-9477, Bd. 86 (2017), S. 81-87
http://dx.doi.org/10.1016/j.physe.2016.10.009
Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy. - In: Applied surface science, Bd. 392 (2017), S. 1043-1048
http://dx.doi.org/10.1016/j.apsusc.2016.09.081
Understanding the effects of diphenyl octyl phosphate as a solid electrolyte interphase forming additive for Li-ion batteries. - In: Meeting abstracts, ISSN 2151-2043, Bd. MA2016-03 (2016), 2, 1078
https://doi.org/10.1149/MA2016-03/2/1078
Band alignment of type I at (100)ZnTe/PbSe interface. - In: AIP Advances, ISSN 2158-3226, Bd. 6 (2016), 6, 065326, insges. 6 S.
A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.
https://doi.org/10.1063/1.4955092
Surface electronic and chemical properties of polar and non-polar indium nitride (InN) films. - In: 20. Deutsche Physikerinnentagung, (2016), S. 149