Corrosion and passivation of p-GaInP2 photocathodes at light-dark boundaries. - In: Meeting abstracts, ISSN 2151-2043, Bd. MA2015-01 (2015), 37, 2022
Im Titel ist "2" tiefgestellt
https://doi.org/10.1149/MA2015-01/37/2022
High-efficiency tandem absorbers for economical solar hydrogen production. - In: Meeting abstracts, ISSN 2151-2043, Bd. MA2015-01 (2015), 37, 1990
https://doi.org/10.1149/MA2015-01/37/1990
Hot carrier solar cell with semi infinite energy filtering. - In: Solar energy, ISSN 1471-1257, Bd. 111 (2015), S. 1-9
Energy filtering of hot carriers in a solar cell may be attained by using band offsets at heterointerfaces. This rough energy filtering does not require special sophisticated energy filtering contacts, and may be implemented in the form of a double heterojunction. PbSe thin film as absorber layer was electrodeposited on InP single crystal. Experimental evidence of hot carrier filtering at InP/PbSe heterointerface at room temperature was obtained by double beam optoelectrical measurements. The measurements can be interpreted by thermionic emission over the band offset barriers. The valence band offset of 0.3eV at the InP/PbSe heterointerface was measured by X-ray Photoelectron Spectroscopy. The filtering process may become useful for new generation of hot carrier solar cells.
https://doi.org/10.1016/j.solener.2014.10.028
Improved electrolyte-additive induced performance of graphite anodes for Lithium-ion batteries - electrochemical and electrode surface studies. - In: Tagungsband, (2015), S. 425-433
LTCC based multi-electrode arrays for in-vitro cell culture. - In: Additional conferences (Device packaging, HiTEC, HiTEN, & CICMT), ISSN 2380-4491, Bd. 2015 (2015), CICMT (Apr.), Seite 000269-000274
https://doi.org/10.4071/CICMT-THA12
Ray-wave correspondence in triangular microlasers. - In: 19. Deutsche Physikerinnentagung, (2015), S. 45
Nanoscale III-V structures on silicon substrates :
Nanoskalige III-V / Silizium Heterostrukturen für hocheffiziente Solarzellen : (Akronym "NANO-III-V-PINs") : Teilprojekt der Technischen Universität Ilmenau: Nanoskalige III-V-Strukturen auf Siliziumsubstraten : Abschlussbericht des Forschungsvorhabens : Laufzeit des Vorhabens: 1.12.2010 bis 30.9.2014$dTechnische Universität Ilmenau, Fakultät für Mathematik und Naturwissenschaften, Institut für Physik, Fachgebiet Photovoltaik ; Projektleitung: Prof. Dr. T. Hannappel ; Autoren: Peter Kleinschmidt, Sebastian Brückner, Oliver Supplie, Agnieszka Paszuk, Weihong Zhao, Matthias Steidl, Christian Koppka und Thomas Hannappel. - Ilmenau : Technische Universität Ilmenau, Fakultät für Mathematik und Naturwissenschaften, Institut für Physik, Fachgebiet Photovoltaik. - 1 Online-Ressource (63 Seiten, 5,23 MB)Förderkennzeichen BMBF 03SF0404A. - Verbund-Nummer 01086505
https://edocs.tib.eu/files/e01fb16/853822999.pdf
Chaotic microlasers. - In: Scholarpedia journal, ISSN 1941-6016, Bd. 10 (2015), 9, S. 30923
Accepted on: 2015-09-15, last modified on 28 November 2015
http://dx.doi.org/10.4249/scholarpedia.30923
Scrutinising growth : reflection anisotropy spectroscopy exposes defects and anti-phase domains that can destroy the performance of III-V-on-silicon devices. - In: Compound semiconductor, ISSN 1096-598X, Bd. 21.2015, V (Jul.), S. 57-59
In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100). - In: APL materials, ISSN 2166-532X, Bd. 3 (2015), 12, S. 126110, insges. 6 S.
http://dx.doi.org/10.1063/1.4939005