Untersuchung zur selbst-organisierten Nanomaskierung in zyklischen Tiefenätzprozessen für die reproduzierbare Erzeugung von nanostrukturierten Silicium. - In: Mikro-Nano-Integration, (2010), S. 60-64
Statische und dynamische Prüfung von Silizium-Nano-Klettverschlüssen. - In: Mikro-Nano-Integration, (2010), S. 111-115
Development of a novel micromirror with high static rotation angle for measurement applications. - In: Abstracts, ISBN 978-90-816737-1-6, (2010), S. 289-292
http://eprints.eemcs.utwente.nl/19346/
Cubic AlGaN/GaN hetero-field effect transistors with normally on and normally off operation. - In: III-Nitride materials for sensing, energy conversion and controlled light-matter interactions, ISBN 978-1-605-11175-9, (2010), S. 107-112
FTIR ellipsometry of SiC heterostructures. - In: AIP conference proceedings, ISSN 1551-7616, Bd. 1292 (2010), S. 83-86
http://dx.doi.org/10.1063/1.3518318
Structuring techniques of aluminiuim nitride masks for deep reactive ion etching (drie) of silicon. - In: Abstracts, ISBN 978-90-816737-1-6, (2010), S. 76-79
http://eprints.eemcs.utwente.nl/19346/
Ionic liquids as novel reactive media for electrodeposition. - In: Symposium Galvanik - eine etablierte Technik innovativ angewendet, (2010), S. 39-44
Electrodeposition of thin Ta layers with thicknesses from some nm up to 1 m has been investigated in the ionic liquids 1-butyl- 1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide, ([Py1,4]-TFSA) and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl) amide, ([EMIM] TFSA). It could be shown that Ta electrodeposition occurs in several steps and that not all the time the deposited species are elemental Ta. By increasing the temperature the quality of the deposited layers can be improved significantly. Moreover, the deposition potential influences strongly the morphology and structure of the deposits.
AlGaN/GaN based heterostructures for MEMS and NEMS applications. - In: Solid state phenomena, ISSN 1662-9779, Bd. 159 (2010), S. 27-38
http://dx.doi.org/10.4028/www.scientific.net/SSP.159.27
Piezoelectric actuated epitaxially grown AlGaN/GaN-resonators. - In: Physica status solidi. Current topics in solid state physics. - Berlin : Wiley-VCH, 2002-2017 , ISSN: 1610-1642 , ZDB-ID: 2102966-0, ISSN 1610-1642, Bd. 7 (2010), 7/8, S. 1829-1831
http://dx.doi.org/10.1002/pssc.200983616
Study on microstructural, chemical and electrical properties of tantalum nitride thin films deposited by reactive direct current magnetron sputtering. - In: Microsystem technologies, ISSN 1432-1858, Bd. 16 (2010), 5, S. 825-836
http://dx.doi.org/10.1007/s00542-009-0993-0