Journal articles and book contributions

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Hülsenberg, Dagmar; Halbedel, Bernd; Conrad, Gerhard; Thess, André; Kolesnikov, Yuri; Lüdtke, Ulrich
Electromagnetic stirring of glass melts using Lorentz forces - experimental results. - In: Glass science and technology, ISSN 0946-7475, Bd. 77 (2004), 4, S. 186-193

Fröhlich, Toni; Scharff, Peter; Schliefke, Willy; Romanus, Henry; Gupta, Vinay; Siegmund, Carmen; Ambacher, Oliver; Spiess, Lothar
Insertion of C60 into multi-wall carbon nanotubes : a synthesis of C60MWCNT. - In: Carbon, ISSN 1873-3891, Bd. 42 (2004), 12/13, S. 2759-2762

http://dx.doi.org/10.1016/j.carbon.2004.05.025
Danis, S.; Hol, V.; Zhong, Z.; Bauer, G.; Ambacher, Oliver
High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers. - In: Applied physics letters, ISSN 1077-3118, Bd. 85 (2004), 15, S. 3065-3067

http://dx.doi.org/10.1063/1.1806279
Al-Ibrahim, Maher; Roth, Hans Klaus; Sensfuss, Steffi
Efficient large-area polymer solar cells on flexible substrates. - In: Applied physics letters, ISSN 1077-3118, Bd. 85 (2004), 9, S. 1481-1483

http://dx.doi.org/10.1063/1.1787158
Bechstedt, Friedhelm; Furthmüller, Jürgen; Ambacher, Oliver; Goldhahn, Rüdiger
Comment on "Mie resonances, infrared emission, and the band gap of InN". - In: Physical review letters, ISSN 1079-7114, Bd. 93 (2004), 26, 269701, insges. 1 S.

https://doi.org/10.1103/PhysRevLett.93.269701
Krischok, Stefan; Yanev, Vasil; Balykov, Oleg; Himmerlich, Marcel; Schäfer, Jürgen A.; Kosiba, Rastislav; Ecke, Gernot; Cimalla, Irina Nicoleta; Cimalla, Volker; Ambacher, Oliver; Lu, Hai; Schaff, William J.; Eastman, Lester F.
Investigations of MBE grown InN and the influence of sputtering on the surface composition. - In: Surface science, ISSN 1879-2758, Bd. 566/568 (2004), 2, S. 849-855

http://dx.doi.org/10.1016/j.susc.2004.06.020
Trushin, Yuri V.; Zhurkin, E. E.; Safonov, K. L.; Schmidt, Alexander A.; Kharlamov, Vladimir S.; Korolev, Sergey A.; Lubov, Maxim N.; Pezoldt, Jörg
Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate. - In: Technical physics letters, ISSN 1090-6533, Bd. 30 (2004), 8, S. 641-643

http://dx.doi.org/10.1134/1.1792299
Kosiba, Rastislav; Ecke, Gernot; Cimalla, Volker; Spieß, Lothar; Krischok, Stefan; Schäfer, Jürgen A.; Ambacher, Oliver; Schaff, William J.
Sputter depth profiling of InN layers. - In: Nuclear instruments & methods in physics research, Bd. 215 (2004), 3/4, S. 486-494

http://dx.doi.org/10.1016/j.nimb.2003.08.039
Kosiba, Rastislav; Liday, Jozef; Ecke, Gernot; Ambacher, Oliver; Breza, Juraj
Auger electron spectroscopy of silicon carbide. - In: Journal of electrical engineering, ISSN 1335-3632, Bd. 55 (2004), 9/10, S. 269-272

Pezoldt, Jörg; Zgheib, Charbel; Masri, Pierre; Averous, Michel; Morales, Francisco M.; Kosiba, Rastislav; Ecke, Gernot; Weih, Petia; Ambacher, Oliver
SIMS investigation of the influence of Ge pre-deposition on the interface quality between SiC and Si. - In: Surface and interface analysis, ISSN 0142-2421, Bd. 36 (2004), 8, S. 969-972