Cimalla, Volker; Pezoldt, Jörg; Ecke, Gernot; Kosiba, Rastislav; Ambacher, Oliver; Spieß, Lothar; Teichert, Gerd; Lu, Hai; Schaff, William J.
Growth of cubic InN on r-plane sapphire. - In: Applied physics letters, ISSN 1077-3118, Bd. 83 (2003), 17, S. 3468-3470
http://dx.doi.org/10.1063/1.1622985
Growth of cubic InN on r-plane sapphire. - In: Applied physics letters, ISSN 1077-3118, Bd. 83 (2003), 17, S. 3468-3470
http://dx.doi.org/10.1063/1.1622985
Lu, Hai; Schaff, William J.; Eastman, Lester F.; Wu, J.; Walukiewicz, Wladek; Cimalla, Volker; Ambacher, Oliver
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy. - In: Applied physics letters, ISSN 1077-3118, Bd. 83 (2003), 6, S. 1136-1138
http://dx.doi.org/10.1063/1.1599634
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy. - In: Applied physics letters, ISSN 1077-3118, Bd. 83 (2003), 6, S. 1136-1138
http://dx.doi.org/10.1063/1.1599634
Trushin, Yuri V.; Safonov, K. L.; Ambacher, Oliver; Pezoldt, Jörg
The transition from 2D to 3D nanoclusters of silicon carbide on silicon. - In: Technical physics letters, ISSN 1090-6533, Bd. 29 (2003), 8, S. 663-665
http://dx.doi.org/10.1134/1.1606782
The transition from 2D to 3D nanoclusters of silicon carbide on silicon. - In: Technical physics letters, ISSN 1090-6533, Bd. 29 (2003), 8, S. 663-665
http://dx.doi.org/10.1134/1.1606782
Jena, Debdeep; Heikman, Sten; Speck, James S.; Gossard, Arthur; Mishra, Umesh K.; Link, Angela; Ambacher, Oliver
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 67 (2003), 15, S. 153306, insges. 4 S.
http://dx.doi.org/10.1103/PhysRevB.67.153306
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 67 (2003), 15, S. 153306, insges. 4 S.
http://dx.doi.org/10.1103/PhysRevB.67.153306
Graf, T.; Gjukic, M.; Hermann, Martin; Brandt, M. S.; Stutzmann, Martin; Ambacher, Oliver
Spin resonance investigations of Mn 2+ in wurtzite GaN and AlN films. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 67 (2003), 16, S. 165215, insges. 12 S.
http://dx.doi.org/10.1103/PhysRevB.67.165215
Spin resonance investigations of Mn 2+ in wurtzite GaN and AlN films. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 67 (2003), 16, S. 165215, insges. 12 S.
http://dx.doi.org/10.1103/PhysRevB.67.165215
Kosiba, Rastislav; Ecke, Gernot; Ambacher, Oliver; Menyhard, M.
Sputtering of SiC with low energy He and Ar ions under grazing incidence. - In: Radiation effects and defects in solids, ISSN 1029-4953, Bd. 158 (2003), 10, S. 721-730
http://dx.doi.org/10.1080/10420150310001599180
Sputtering of SiC with low energy He and Ar ions under grazing incidence. - In: Radiation effects and defects in solids, ISSN 1029-4953, Bd. 158 (2003), 10, S. 721-730
http://dx.doi.org/10.1080/10420150310001599180
Kosiba, Rastislav; Ecke, Gernot; Liday, Jozef; Breza, Juraj; Ambacher, Oliver
Auger depth profiling and factor analysis of sputter induced altered layers in SiC. - In: Journal of electrical engineering, ISSN 1335-3632, Bd. 54 (2003), 1/2, S. 52-56
Auger depth profiling and factor analysis of sputter induced altered layers in SiC. - In: Journal of electrical engineering, ISSN 1335-3632, Bd. 54 (2003), 1/2, S. 52-56
Zhokhavets, Uladzimir; Goldhahn, Rüdiger; Gobsch, Gerhard; Schliefke, Willy
Dielectric function and one-dimensional description of the absorption of poly(3-octylthiophene). - In: Synthetic metals, Bd. 138 (2003), 3, S. 491-495
http://dx.doi.org/10.1016/S0379-6779(02)00502-7
Dielectric function and one-dimensional description of the absorption of poly(3-octylthiophene). - In: Synthetic metals, Bd. 138 (2003), 3, S. 491-495
http://dx.doi.org/10.1016/S0379-6779(02)00502-7
Kosiba, Rastislav; Ecke, Gernot; Liday, Jozef; Breza, Juraj; Ambacher, Oliver
Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis. - In: Applied surface science, Bd. 220 (2003), 1/4, S. 304-312
http://dx.doi.org/10.1016/S0169-4332(03)00833-X
Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis. - In: Applied surface science, Bd. 220 (2003), 1/4, S. 304-312
http://dx.doi.org/10.1016/S0169-4332(03)00833-X
Miskys, Claudio R.; Garrido, J. A.; Nebel, Christoph E.; Hermann, Martin; Ambacher, Oliver; Eickhoff, Martin; Stutzmann, Martin
AlN/diamond heterojunction diodes. - In: Applied physics letters, ISSN 0003-6951, Bd. 82 (2003), 2, S. 290-292
AlN/diamond heterojunction diodes. - In: Applied physics letters, ISSN 0003-6951, Bd. 82 (2003), 2, S. 290-292