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Buckling stabilization and stress reduction in SiC on Si by i-FLASiC processing. - In: Materials science forum, ISSN 1662-9752, Bd. 600/603 (2009), S. 239-242
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Niebelschütz, Florentina; Brückner, Klemens; Cimalla, Volker; Hein, Matthias; Pezoldt, Jörg
Performance modification of SiC MEMS. - In: Silicon carbide and related materials 2008, (2009), S. 621-624
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Kolaklieva, Lilyana; Kakanakov, Roumen; Stefanov, Plamen; Cimalla, Volker; Maroldt, Stephan; Ambacher, Oliver; Tonisch, Katja; Niebelschütz, Florentina
Composition and interface chemistry dependence in Ohmic contacts to GaN HEMT structures on the Ti/Al ratio and annealing conditions. - In: Silicon carbide and related materials 2008, (2009), S. 951-954
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Peyre, Hervé; Pezoldt, Jörg; Voelskow, Matthias; Skorupa, Wolfgang; Camassel, Jean
SIMS investigation of Ge x(4H-SiC) 1-x solid solutions synthesized by Ge-ion implantation up to x=0.2. - In: Silicon carbide and related materials 2008, (2009), S. 465-468
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SIMS investigation of Ge x(4H-SiC) 1-x solid solutions synthesized by Ge-ion implantation up to x=0.2. - In: Silicon carbide and related materials 2008, (2009), S. 465-468
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Formation of different carbon phases on SiC. - In: Silicon carbide and related materials 2008, (2009), S. 227-230
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Properties of surface and interface structure of AlN/3CSiC/Ge/Si (1 1 1) heterostructure. - In: Journal of crystal growth, Bd. 311 (2009), 23/24, S. 4665-4669
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Pezoldt, Jörg; Kups, Thomas; Stauden, Thomas; Schröter, Bernd
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Comparative study of 3C-GaN grown on semi-insulating 3C-SiC/Si(100) substrates. - In: Silicon carbide and related materials 2008, (2009), S. 943-946
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