Komplexierungsverhalten von dreiwertigem Chrom mit Carbonsäuren. - In: ZVO-Report, (2018), 5, S. 59
Wasserstoffproduktion durch photoelektrochemische Wasserspaltung an Halbleiterelektroden. - In: ZVO-Report, (2018), 4, S. 53
Galvanische Abscheidung von dekorativem, dunklem Chrom aus Chrom(III)-Elektrolyten. - In: ZVO-Report, (2018), 3, S. 91
Bildungsmechanismus von sechswertigem Chrom auf dreiwertigen Chrom-Passivschichten. - In: ZVO-Report, (2018), 1, S. 54
Quadruped locomotion. - In: Living machines, (2018), S. 289-303
https://doi.org/10.1093/oso/9780199674923.003.0031
Metrological reliability of thermoelectric nanosensor of quantum temperature standard :
Мetrologična nadijnistь termoelektryčnogo nanosensora kvantovogo etalonu temperatury. - In: Measuring Equipment and Metrology, ISSN 2617-846X, Bd. 79 (2018), 2, insges. 9 S.
While studying the physical foundations of the temperature standard, we obtained a quantum unit of temperature as the value of the temperature jump when one electron-phonon scattering per unit time. We expressed it in terms of the ratio of fundamental physical constants h/kB; it is equal to 3.199 493 42 &hahog; 10-11 K with a relative standard uncertainty of 59.2 &hahog; 10-8. The investigated quantum standard is recommended for use as an "intrinsic standard", which does not require continuously repeated measurements (to check its accuracy) in relation to the current unit of temperature. The possibility of the introduction of standard quantum temperature requires paying significant attention to the I (current) - T (temperature) converting element as unique electronic device that is subject to significant stress during operation. Considering its nanosized dimensions, since this element is made on the basis of CNTFET by transforming it into a nanosized thermocouple (source and drain) with a superconducting CNT gate as the thermocouple junction, we foresee particularly stringent requirements for this element.
https://doi.org/10.23939/istcmtm2018.02.020
Vereinfachte Verfahren der Bewegungsanalyse. - In: Orthopädie-Technik, ISSN 0340-5591, Bd. 69 (2018), 12, S. 36-41
Selective pattern transfer of nano-scale features generated by FE-SPL in 10 nm thick resist layers. - In: American journal of nano research and applications, ISSN 2575-3738, Bd. 6 (2018), 1, S. 11-20
High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask- and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.
https://dx.doi.org/10.11648/j.nano.20180601.12
Identification of pointing and waving in gesture-based human-machine-interaction. - In: Gesture recognition, (2018), S. 115-145
E-Learning für die Aus- und Weiterbildung in der Mikro-Nano-Integration (Nano-TecLearn). - In: E-Qualification 2018, (2018), S. 30