Hiller, Lars; Stauden, Thomas; Kemper, Ricarda M.; Lindner, Jörg K. N.; As, Donat J.; Pezoldt, Jörg
ECR-etching of submicron and nanometer sized 3C-SiC(100) mesa structures. - In: Materials science forum, ISSN 1662-9752, Bd. 717/720 (2012), S. 901-904
http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.901
ECR-etching of submicron and nanometer sized 3C-SiC(100) mesa structures. - In: Materials science forum, ISSN 1662-9752, Bd. 717/720 (2012), S. 901-904
http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.901
Knoblauch, Michael; Stubenrauch, Mike; Van Bel, Aart J. E.; Peters, Winfried S.
Forisome performance in artificial sieve tubes. - In: Plant, cell & environment, ISSN 1365-3040, Bd. 35 (2012), 8, S. 1419-1427
http://dx.doi.org/10.1111/j.1365-3040.2012.02499.x
Forisome performance in artificial sieve tubes. - In: Plant, cell & environment, ISSN 1365-3040, Bd. 35 (2012), 8, S. 1419-1427
http://dx.doi.org/10.1111/j.1365-3040.2012.02499.x
Pezoldt, Jörg; Hummel, Christian; Schwierz, Frank
Graphene field effect transistor improvement by graphene-silicon dioxide interface modification. - In: Physica. Low-dimensional systems & nanostructures. - Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998- , ISSN: 1386-9477 , ZDB-ID: 1466595-5, ISSN 1386-9477, Bd. 44 (2012), 6, S. 985-988
http://dx.doi.org/10.1016/j.physe.2011.05.008
Graphene field effect transistor improvement by graphene-silicon dioxide interface modification. - In: Physica. Low-dimensional systems & nanostructures. - Amsterdam [u.a.] : North-Holland, Elsevier Science, 1998- , ISSN: 1386-9477 , ZDB-ID: 1466595-5, ISSN 1386-9477, Bd. 44 (2012), 6, S. 985-988
http://dx.doi.org/10.1016/j.physe.2011.05.008
Eisenhardt, Anja; Himmerlich, Marcel; Lorenz, Pierre; Tonisch, Katja; Pezoldt, Jörg; Krischok, Stefan
Epitaxial growth and characterization of InN and GaN on C-face SiC(111)/Si(111). - In: 75th Annual Meeting of the DPG and combined DPG Spring Meeting of the Condensed Matter Section and the Section AMOP, 2011, HL 44.27
Epitaxial growth and characterization of InN and GaN on C-face SiC(111)/Si(111). - In: 75th Annual Meeting of the DPG and combined DPG Spring Meeting of the Condensed Matter Section and the Section AMOP, 2011, HL 44.27
Göckeritz, Robert; Pezoldt, Jörg; Schwierz, Frank
Intrinsic voltage rectification in a graphene nano device. - In: 75th Annual Meeting of the DPG and combined DPG Spring Meeting of the Condensed Matter Section and the Section AMOP, 2011, O 60.55
Intrinsic voltage rectification in a graphene nano device. - In: 75th Annual Meeting of the DPG and combined DPG Spring Meeting of the Condensed Matter Section and the Section AMOP, 2011, O 60.55
Liday, Jozef; Vogrinčič, Peter; Ecke, Gernot
Some aspects of quantitative analysis of ternary alloys of group III-nitrides by Auger electron spectroscopy. - In: Journal of electrical engineering, ISSN 1339-309X, Bd. 62 (2011), 6, S. 367-369
Richtiger Name des 3. Verfassers: Gernot Ecke
https://doi.org/10.2478/v10187-011-0059-2
Some aspects of quantitative analysis of ternary alloys of group III-nitrides by Auger electron spectroscopy. - In: Journal of electrical engineering, ISSN 1339-309X, Bd. 62 (2011), 6, S. 367-369
Richtiger Name des 3. Verfassers: Gernot Ecke
https://doi.org/10.2478/v10187-011-0059-2
Nader, Richard; Pezoldt, Jörg
Quantitative evaluation of strain in epitaxial 2H-AlN layers. - In: Advances in innovative materials and applications, (2011), S. 213-216
Quantitative evaluation of strain in epitaxial 2H-AlN layers. - In: Advances in innovative materials and applications, (2011), S. 213-216
Pezoldt, Jörg; Schröter, Bernd
Polarity control of CVD grown 3C-SiC on Si(111). - In: Materials science forum, ISSN 1662-9752, Bd. 679/680 (2011), S. 91-94
http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.91
Polarity control of CVD grown 3C-SiC on Si(111). - In: Materials science forum, ISSN 1662-9752, Bd. 679/680 (2011), S. 91-94
http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.91
Göckeritz, Robert; Tonisch, Katja; Jatal, Wael; Hiller, Lars; Schwierz, Frank; Pezoldt, Jörg
Side gate graphene and AlGaN/GaN unipolar nanoelectronic devices. - In: Advances in innovative materials and applications, (2011), S. 427-430
Side gate graphene and AlGaN/GaN unipolar nanoelectronic devices. - In: Advances in innovative materials and applications, (2011), S. 427-430
Pezoldt, Jörg; Kalnin, Andrei Alexandrovich
Defect interactions and polytype transitions. - In: Advances in innovative materials and applications, (2011), S. 217-220
Defect interactions and polytype transitions. - In: Advances in innovative materials and applications, (2011), S. 217-220