Lebedev, Vadim; Morales, Francisco M.; Romanus, Henry; Ecke, Gernot; Cimalla, Volker; Himmerlich, Marcel; Krischok, Stefan; Schäfer, Jürgen A.; Ambacher, Oliver
Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1420-1424
http://dx.doi.org/10.1002/pssc.200565178
Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1420-1424
http://dx.doi.org/10.1002/pssc.200565178
Buchheim, Carsten; Goldhahn, Rüdiger; Winzer, Andreas T.; Cobet, Christoph; Rakel, Munise; Esser, Norbert; Rossow, Uwe; Fuhrmann, Daniel; Hangleiter, Andreas; Ambacher, Oliver
Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 2009-2013
http://dx.doi.org/10.1002/pssc.200565300
Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 2009-2013
http://dx.doi.org/10.1002/pssc.200565300
Cimalla, Irina; Förster, Christian; Cimalla, Volker; Lebedev, Vadim; Cengher, Dorin; Ambacher, Oliver
Wet chemical etching of AlN in KOH solution. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1767-1770
http://dx.doi.org/10.1002/pssc.200565206
Wet chemical etching of AlN in KOH solution. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1767-1770
http://dx.doi.org/10.1002/pssc.200565206
Cimalla, Volker; Niebelschütz, Merten; Ecke, Gernot; Ambacher, Oliver; Goldhahn, Rüdiger; Lu, Hai; Schaff, William J.
The conductivity of Mg-doped InN. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1721-1724
http://dx.doi.org/10.1002/pssc.200565473
The conductivity of Mg-doped InN. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 1721-1724
http://dx.doi.org/10.1002/pssc.200565473
Tonisch, Katja; Cimalla, Volker; Förster, Christian; Dontsov, Denys; Ambacher, Oliver
Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 2274-2277
http://dx.doi.org/10.1002/pssc.200565123
Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy. - In: Physica status solidi, ISSN 1610-1642, Bd. 3 (2006), 6, S. 2274-2277
http://dx.doi.org/10.1002/pssc.200565123
Kosiba, Rastislav; Liday, Jozef; Ecke, Gernot; Ambacher, Oliver; Breza, Juraj; Vogrinčič, Peter
Quantitative Auger electron spectroscopy of SiC. - In: Vacuum, ISSN 0042-207X, Bd. 80 (2006), 9, S. 990-995
http://dx.doi.org/10.1016/j.vacuum.2006.01.003
Quantitative Auger electron spectroscopy of SiC. - In: Vacuum, ISSN 0042-207X, Bd. 80 (2006), 9, S. 990-995
http://dx.doi.org/10.1016/j.vacuum.2006.01.003
Zgheib, Charbel; McNeil, L. E.; Masri, Pierre; Förster, Christian; Morales, Francisco M.; Stauden, Thomas; Ambacher, Oliver; Pezoldt, Jörg
Ge-modified Si(100) substrates for the growth of 3C-SiC(100). - In: Applied physics letters, ISSN 1077-3118, Bd. 88 (2006), 21, S. 211909, insges. 3 S.
http://dx.doi.org/10.1063/1.2206558
Ge-modified Si(100) substrates for the growth of 3C-SiC(100). - In: Applied physics letters, ISSN 1077-3118, Bd. 88 (2006), 21, S. 211909, insges. 3 S.
http://dx.doi.org/10.1063/1.2206558
Förster, Christian; Cimalla, Volker; Lebedev, Vadim; Pezoldt, Jörg; Brückner, Klemens; Stephan, Ralf; Hein, Matthias; Aperathitis, Elias; Ambacher, Oliver
Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications. - In: Physica status solidi, ISSN 1862-6319, Bd. 203 (2006), 7, S. 1829-1833
http://dx.doi.org/10.1002/pssa.200565232
Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications. - In: Physica status solidi, ISSN 1862-6319, Bd. 203 (2006), 7, S. 1829-1833
http://dx.doi.org/10.1002/pssa.200565232
Shokhovets, Sviatoslav; Gobsch, Gerhard; Ambacher, Oliver
Conduction band parameters of ZnO. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 39 (2006), 1/4, S. 299-305
http://dx.doi.org/10.1016/j.spmi.2005.08.052
Conduction band parameters of ZnO. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 39 (2006), 1/4, S. 299-305
http://dx.doi.org/10.1016/j.spmi.2005.08.052
Zhokhavets, Uladzimir; Erb, Tobias; Gobsch, Gerhard; Al-Ibrahim, Maher; Ambacher, Oliver
Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells. - In: Chemical physics letters, Bd. 418 (2006), 4/6, S. 347-350
http://dx.doi.org/10.1016/j.cplett.2005.11.020
Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells. - In: Chemical physics letters, Bd. 418 (2006), 4/6, S. 347-350
http://dx.doi.org/10.1016/j.cplett.2005.11.020