Weise, Frank;
Burgold, Jörg; Dressler, Lothar; Wurmus, Helmut; Ambacher, Oliver
Dosierung von Flüssigkeiten im Pikoliterbereich. - In: Mikrosystemtechnik Kongress 2005, (2005), S. 697-699
Dosierung von Flüssigkeiten im Pikoliterbereich. - In: Mikrosystemtechnik Kongress 2005, (2005), S. 697-699
Sensfuss, Steffi; Al-Ibrahim, Maher
Optoelectronic properties of conjugated polymer/fullerene binary pairs with variety of LUMO level differences. - In: Organic photovoltaics, (2005), S. 529-557
Optoelectronic properties of conjugated polymer/fullerene binary pairs with variety of LUMO level differences. - In: Organic photovoltaics, (2005), S. 529-557
Weih, Petia; Stauden, Thomas; Ecke, Gernot; Shokhovets, Sviatoslav; Zgheib, Charbel; Voelskow, Matthias; Skorupa, Wolfgang; Ambacher, Oliver; Pezoldt, Jörg
Ion beam synthesis of 3C-(Si 1-x C 1-y ) Ge x+y solid solution. - In: Physica status solidi, ISSN 1862-6319, Bd. 202 (2005), 4, S. 545-549
http://dx.doi.org/10.1002/pssa.200460418
Ion beam synthesis of 3C-(Si 1-x C 1-y ) Ge x+y solid solution. - In: Physica status solidi, ISSN 1862-6319, Bd. 202 (2005), 4, S. 545-549
http://dx.doi.org/10.1002/pssa.200460418
Schmidt, Alexander A.; Kharlamov, Vladimir S.; Safanov, K. L.; Trushin, Yuri V.; Zhurkin, E. E.; Cimalla, Volker; Ambacher, Oliver; Pezoldt, Jörg
Growth of tree-dimensional SiC clusters on simodelled by KMC. - In: Computational materials science, Bd. 33 (2005), 1/3, S. 375-381
http://dx.doi.org/10.1016/j.commatsci.2004.12.005
Growth of tree-dimensional SiC clusters on simodelled by KMC. - In: Computational materials science, Bd. 33 (2005), 1/3, S. 375-381
http://dx.doi.org/10.1016/j.commatsci.2004.12.005
Lebedev, Vladimir S.; Cimalla, Volker; Kaiser, Ute; Pezoldt, Jörg; Biskupek, Johannes; Ambacher, Oliver
Effect of nanoscale surface morphology on the phase stability of 3C-AIN films on Si(111). - In: Journal of applied physics, ISSN 1089-7550, Bd. 97 (2005), 11, 114306, insges. 6 S.
https://doi.org/10.1063/1.1915535
Effect of nanoscale surface morphology on the phase stability of 3C-AIN films on Si(111). - In: Journal of applied physics, ISSN 1089-7550, Bd. 97 (2005), 11, 114306, insges. 6 S.
https://doi.org/10.1063/1.1915535
Zgheib, Charbel; McNeil, L. E.; Kazan, Michel; Masri, Pierre; Morales, Francisco M.; Ambacher, Oliver; Pezoldt, Jörg
Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111). - In: Applied physics letters, ISSN 1077-3118, Bd. 87 (2005), 4, S. 041905, insges. 3 S.
http://dx.doi.org/10.1063/1.1999858
Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111). - In: Applied physics letters, ISSN 1077-3118, Bd. 87 (2005), 4, S. 041905, insges. 3 S.
http://dx.doi.org/10.1063/1.1999858
Kharlamov, Vladimir S.; Lubov, Maxim N.; Pezoldt, Jörg; Trushin, Yuri V.; Zhurkin, Evgeni E.
Molecular dynamics study of diffusion barriers of Si and C adatoms on Si surfaces. - In: Eighth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2005), S. 51-55
Molecular dynamics study of diffusion barriers of Si and C adatoms on Si surfaces. - In: Eighth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2005), S. 51-55
Al-Ibrahim, Maher; Ambacher, Oliver; Sensfuss, Steffi; Gobsch, Gerhard
Effects of solvent and annealing on the improves performance of solar cells based on poly(3-hexylthiophene): fullerene. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 20, S. 201120, insges. 3 S.
http://dx.doi.org/10.1063/1.1929875
Effects of solvent and annealing on the improves performance of solar cells based on poly(3-hexylthiophene): fullerene. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 20, S. 201120, insges. 3 S.
http://dx.doi.org/10.1063/1.1929875
Dmowski, L. H.; Plesiewicz, J. A.; Suski, T.; Lu, Hai; Schaff, William; Kurouchi, M.; Nanishi, Y.; Konczewicz, L.; Cimalla, Volker; Ambacher, Oliver
Resonant localized donor state above the conduction band minimum in InN. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 26, S. 262105, insges. 3 S.
http://dx.doi.org/10.1063/1.1977212
Resonant localized donor state above the conduction band minimum in InN. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 26, S. 262105, insges. 3 S.
http://dx.doi.org/10.1063/1.1977212
Al-Ibrahim, Maher; Sensfuss, Steffi; Uziel, Jutta; Ecke, Gernot; Ambacher, Oliver
Comparison of normal and inverse poly(3-hexylthiophene)/fullerene solar cell architectures. - In: Solar energy materials & solar cells, ISSN 1879-3398, Bd. 85 (2005), 2, S. 277-283
http://dx.doi.org/10.1016/j.solmat.2004.08.001
Comparison of normal and inverse poly(3-hexylthiophene)/fullerene solar cell architectures. - In: Solar energy materials & solar cells, ISSN 1879-3398, Bd. 85 (2005), 2, S. 277-283
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