Pieterwas, Ralf; Kosiba, Rastislav; Ecke, Gernot; Pezoldt, Jörg; Rößler, Hans
Auger depth profiling of thin SiC layers: practical aspects for a better understanding of quantitative analysis. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 281-287
Auger depth profiling of thin SiC layers: practical aspects for a better understanding of quantitative analysis. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 281-287
Pezoldt, Jörg;
Teichert, Gerd; Panknin, Dieter; Voelskow, Matthias
Photothermal measurements of Al+- and Al+/N+- implanted 6H-SiC. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 276-280
Im Titel ist "+" hochgestellt
Photothermal measurements of Al+- and Al+/N+- implanted 6H-SiC. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 276-280
Im Titel ist "+" hochgestellt
Wöhner, Thomas; Cimalla, Volker; Stauden, Thomas; Schäfer, Jürgen A.; Pezoldt, Jörg
Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces. - In: Thin solid films, ISSN 1879-2731, Bd. 364 (2000), 1/2, S. 28-32
https://doi.org/10.1016/S0040-6090(99)00918-9
Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces. - In: Thin solid films, ISSN 1879-2731, Bd. 364 (2000), 1/2, S. 28-32
https://doi.org/10.1016/S0040-6090(99)00918-9
Scharmann, Friedrich; Maslarski, P.; Attenberger, Wilfried; Lindner, Jörg K. N.; Stritzker, Bernd; Stauden, Thomas; Pezoldt, Jörg
Investigation of the nucleation and growth of SiC nanostructures on Si. - In: Thin solid films, ISSN 1879-2731, Bd. 380 (2000), 1/2, S. 92-96
https://doi.org/10.1016/S0040-6090(00)01476-0
Investigation of the nucleation and growth of SiC nanostructures on Si. - In: Thin solid films, ISSN 1879-2731, Bd. 380 (2000), 1/2, S. 92-96
https://doi.org/10.1016/S0040-6090(00)01476-0
Pieterwas, Ralf; Ecke, Gernot; Kosiba, Rastislav; Rößler, Hans
A new method of the determination of significant factors with factor analysis in AES. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 368 (2000), 4, S. 326-334
http://dx.doi.org/10.1007/s002160000450
A new method of the determination of significant factors with factor analysis in AES. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 368 (2000), 4, S. 326-334
http://dx.doi.org/10.1007/s002160000450
Masri, Pierre; Rouhani Laridjani, M.; Wöhner, Thomas; Pezoldt, Jörg; Averous, Michel
Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth. - In: Computational materials science, Bd. 17 (2000), 2/4, S. 544-550
http://dx.doi.org/10.1016/S0927-0256(00)00085-9
Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth. - In: Computational materials science, Bd. 17 (2000), 2/4, S. 544-550
http://dx.doi.org/10.1016/S0927-0256(00)00085-9
Pezoldt, Jörg; Rybin, Peter V.; Kulikov, Dmitri V.; Trushin, Yuri V.; Yankov, Rossen A.; Voelskow, Matthias; Kreissig, Ulrich
The influence of the implantation sequence on the (SiC) 1-x (AlN) x formation. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 166/167 (2000), S. 758-763
http://dx.doi.org/10.1016/S0168-583X(99)01059-9
The influence of the implantation sequence on the (SiC) 1-x (AlN) x formation. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 166/167 (2000), S. 758-763
http://dx.doi.org/10.1016/S0168-583X(99)01059-9
Romanus, Henry; Cimalla, Volker; Schäfer, Jürgen A.; Spieß, Lothar; Ecke, Gernot; Pezoldt, Jörg
Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers. - In: Thin solid films, ISSN 1879-2731, Bd. 359 (2000), 2, S. 146-149
http://dx.doi.org/10.1016/S0040-6090(99)00732-4
Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers. - In: Thin solid films, ISSN 1879-2731, Bd. 359 (2000), 2, S. 146-149
http://dx.doi.org/10.1016/S0040-6090(99)00732-4
As, Donat J.; Frey, T.; Schikora, D.; Lischka, Klaus; Cimalla, Volker; Pezoldt, Jörg; Goldhahn, Rüdiger; Kaiser, S.; Gebhardt, W.
Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates. - In: Applied physics letters, ISSN 1077-3118, Bd. 76 (2000), 13, S. 1686-1688
http://dx.doi.org/10.1063/1.126136
Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates. - In: Applied physics letters, ISSN 1077-3118, Bd. 76 (2000), 13, S. 1686-1688
http://dx.doi.org/10.1063/1.126136
Pezoldt, Jörg;
Yankov, Rossen A.; Werninghaus, Thomas; Zahn, Dietrich R. T.; Fukarek, Wolfgang; Teichert, Gerd; Lübbe, Martin; Skorupa, Wolfgang
Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods. - In: Diamond and related materials, ISSN 0925-9635, Bd. 8 (1999), 2/5, S. 346-351
Im Titel ist "+" hochgestellt
https://doi.org/10.1016/S0925-9635(98)00307-0
Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods. - In: Diamond and related materials, ISSN 0925-9635, Bd. 8 (1999), 2/5, S. 346-351
Im Titel ist "+" hochgestellt
https://doi.org/10.1016/S0925-9635(98)00307-0