Kosiba, Rastislav; Ecke, Gernot; Liday, Jozef; Breza, Juraj; Ambacher, Oliver
Auger depth profiling and factor analysis of sputter induced altered layers in SiC. - In: Journal of electrical engineering, ISSN 1335-3632, Bd. 54 (2003), 1/2, S. 52-56
Auger depth profiling and factor analysis of sputter induced altered layers in SiC. - In: Journal of electrical engineering, ISSN 1335-3632, Bd. 54 (2003), 1/2, S. 52-56
Zhokhavets, Uladzimir; Goldhahn, Rüdiger; Gobsch, Gerhard; Schliefke, Willy
Dielectric function and one-dimensional description of the absorption of poly(3-octylthiophene). - In: Synthetic metals, Bd. 138 (2003), 3, S. 491-495
http://dx.doi.org/10.1016/S0379-6779(02)00502-7
Dielectric function and one-dimensional description of the absorption of poly(3-octylthiophene). - In: Synthetic metals, Bd. 138 (2003), 3, S. 491-495
http://dx.doi.org/10.1016/S0379-6779(02)00502-7
Kosiba, Rastislav; Ecke, Gernot; Liday, Jozef; Breza, Juraj; Ambacher, Oliver
Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis. - In: Applied surface science, Bd. 220 (2003), 1/4, S. 304-312
http://dx.doi.org/10.1016/S0169-4332(03)00833-X
Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis. - In: Applied surface science, Bd. 220 (2003), 1/4, S. 304-312
http://dx.doi.org/10.1016/S0169-4332(03)00833-X
Miskys, Claudio R.; Garrido, J. A.; Nebel, Christoph E.; Hermann, Martin; Ambacher, Oliver; Eickhoff, Martin; Stutzmann, Martin
AlN/diamond heterojunction diodes. - In: Applied physics letters, ISSN 0003-6951, Bd. 82 (2003), 2, S. 290-292
AlN/diamond heterojunction diodes. - In: Applied physics letters, ISSN 0003-6951, Bd. 82 (2003), 2, S. 290-292
Park, M.; Cuomo, J. J.; Rodriguez, B. J.; Yang, W.-C.; Nemanich, R. J.; Ambacher, Oliver
Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures. - In: Journal of applied physics, ISSN 0021-8979, Bd. 93 (2003), 12, S. 9542-9547
Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures. - In: Journal of applied physics, ISSN 0021-8979, Bd. 93 (2003), 12, S. 9542-9547
Yang, W.-C.; Rodriguez, B. J.; Park, M.; Nemanich, R. J.; Ambacher, Oliver; Cimalla, Volker
Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures. - In: Journal of applied physics, ISSN 0021-8979, Bd. 94 (2003), 9, S. 5720-5725
Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures. - In: Journal of applied physics, ISSN 0021-8979, Bd. 94 (2003), 9, S. 5720-5725
Graf, T.; Gjukic, M.; Hermann, Martin; Brandt, M. S.; Stutzmann, Martin; Görgens, L.; Philipp, J. B.; Ambacher, Oliver
Growth and characterization of GaN:Mn epitaxial films. - In: Journal of applied physics, ISSN 0021-8979, Bd. 93 (2003), 12, S. 9697-9702
Growth and characterization of GaN:Mn epitaxial films. - In: Journal of applied physics, ISSN 0021-8979, Bd. 93 (2003), 12, S. 9697-9702
Gevorkian, Gevorg; Schorcht, Hans-Jürgen; Kern, Heinrich; Boccaccini, Aldo R.
Preliminary investigation of the wear behaviour of self-lubricating carbon fibre reinforced glass matrix composites in vacuum. - In: Applied composite materials, ISSN 1573-4897, Bd. 9 (2002), 3, S. 169-177
https://doi.org/10.1023/A:1014755216027
Preliminary investigation of the wear behaviour of self-lubricating carbon fibre reinforced glass matrix composites in vacuum. - In: Applied composite materials, ISSN 1573-4897, Bd. 9 (2002), 3, S. 169-177
https://doi.org/10.1023/A:1014755216027
Becker, Holger; Arundell, M.; Harnisch, Alf; Hülsenberg, Dagmar
Chemical analysis in photostructurable glass chips. - In: Sensors and actuators. Chemical. - Amsterdam [u.a.] : Elsevier Science, 1990- , ISSN: 0925-4005 , ZDB-ID: 1500731-5, ISSN 0925-4005, Bd. 86 (2002), 2/3, S. 271-279
https://doi.org/10.1016/S0925-4005(02)00162-4
Chemical analysis in photostructurable glass chips. - In: Sensors and actuators. Chemical. - Amsterdam [u.a.] : Elsevier Science, 1990- , ISSN: 0925-4005 , ZDB-ID: 1500731-5, ISSN 0925-4005, Bd. 86 (2002), 2/3, S. 271-279
https://doi.org/10.1016/S0925-4005(02)00162-4
Hotovy, Ivan; Rehacek, Vlastimil; Siciliano, Pietro; Capone, Simonetta; Spieß, Lothar
Sensing characteristics of NiO thin films as NO2 gas sensors. - In: Thin solid films, ISSN 1879-2731, Bd. 418 (2002), 1, S. 9-15
Im Titel ist "2" tiefgestellt
https://doi.org/10.1016/S0040-6090(02)00579-5
Sensing characteristics of NiO thin films as NO2 gas sensors. - In: Thin solid films, ISSN 1879-2731, Bd. 418 (2002), 1, S. 9-15
Im Titel ist "2" tiefgestellt
https://doi.org/10.1016/S0040-6090(02)00579-5