Zeitschriftenaufsätze und Buchbeiträge

Ultra-thin flexible glass with thicknesses of 100 µm or below is a substrate in the fields of optics, electronics, and semiconductors. Its brittleness is challenging in production processes like physical vapor deposition processes, especially in roll-to-roll production. In many cases, multiple geometric deformations take place and each step, like coating or cutting, influences the glass strength. By now, the relation between the strength of ultra-thin glass under quasi-static conditions and its strength under cyclic load has not been studied. Moreover, the effect of coatings has not been investigated. Both aspects are crucial to design reliable production processes. Therefore, the strength of ultra-thin glass under cyclic load was studied for uncoated and coated substrates. Two coating types were investigated: a single indium tin oxide film and a seven-layer antireflective layer stack. The coatings significantly influence the strength of the underlying glass in both test modes. The barrier properties, thin film stress, and the morphology/crystalline structure are identified as the major characteristics influencing the strength.

The molecular structure of Er2O3 doped Na2O-Al2O3-SiO2 glasses with varying Na2O/Al2O3 ratios is explored via molecular dynamics (MD) simulations using the so-called inherent structure sampling method, which allows the calculation of a large number of local structures of low concentration, as needed to determine the surrounding of low concentration dopants. General structural parameters, including radial distribution functions, coordination numbers and interatomic distances of all network forming and network modifying ions are reported. However, in this work, special attention is devoted to the effect of Al2O3 concentration on the local surrounding of the doped Er3+ ions. It is shown that the Er atoms coordinate 5-6 oxygen ions in their first coordination sphere in the investigated glasses. The Er-O coordination number increases monotonically with increasing Al2O3 concentration and decreasing Na2O/Al2O3 ratio. It is found that the Er atoms are preferably connected to non-bridging oxygen atoms (NBO) in all glasses, even in the peraluminous composition. Additionally, the MD simulation results are compared to the glasses spectral properties that were already investigated in detail by Tanabe and Hanada. The increasing Er-NBO coordination number derived by MD simulations could be correlated with the increased peak splitting of the Er3+ absorption peaks reported by Tanabe and Hanada. Furthermore, a correlation between the Judd-Ofelt parameters published by Tanabe and Hanada and the Er3+ coordination in the glass structure is discussed. It is shown that the Er-O coordination increases with increasing Ω2 parameter as the Al2O3 concentration increases in the glass composition. A correlation of the average overall Er-O coordination number with the symmetry of the local Er site is proposed.

Hard nitride coatings are commonly employed to protect components subjected to friction, whereby such coatings should possess excellent tribomechanical properties in order to endure high stresses and temperatures. In this study, WN/NbN coatings are synthesized by using the cathodic-arc evaporation (CA-PVD) technique at various negative bias voltages in the 50-200 V range. The phase composition, microstructural features, and tribomechanical properties of the multilayers are comprehensively studied. Fabricated coatings have a complex structure of three nanocrystalline phases: β-W2N, δ-NbN, and ε-NbN. They demonstrate a tendency for (111)-oriented grains to overgrow (200)-oriented grains with increasing coating thickness. All of the data show that a decrease in the fraction of ε-NbN phase and formation of the (111)-textured grains positively impact mechanical properties and wear behavior. Investigation of the room-temperature tribological properties reveals that with an increase in bias voltage from −50 to −200 V, the wear mechanisms change as follows: oxidative &flech; fatigue and oxidative &flech; adhesive and oxidative. Furthermore, WN/NbN coatings demonstrate a high hardness of 33.6-36.6 GPa and a low specific wear rate of (1.9-4.1) × 10-6 mm3/Nm. These results indicate that synthesized multilayers hold promise for tribological applications as wear-resistant coatings.

Surface structuring methods are crucial in semiconductor manufacturing, as they enable the creation of intricate structures on the semiconductor surface, influencing the material’s electrical, mechanical, and chemical properties. This study employs one such structuring method known as reactive ion etching to create black Si structures on silicon substrates. After thermal oxidation, their influence on the reaction of Al/Ni nanoscale multilayers is. For this purpose, various densities of thermally oxidized black Si structures are investigated. It reveals distinct reactive behaviors without corresponding differences in energy release during differential scanning calorimetry measurements. Higher oxidized black Si structure densities result in elevated temperatures and faster reaction propagation, showing fewer defects and reduced layer connections in cross-sectional analyses. The properties of the reactive multilayers on high structure density show the same performance as a reaction on flat thermal SiO2, causing delamination when exceeding 23 structures per µm2. Conversely, lower structure density ensures attachment of reactive multilayers to the substrate due to an increased number of defects, acting as predetermined breaking points for the AlNi alloy. By establishing the adhesion between the reacted multilayer and the substrate, surface structuring could lead to a potential increase in bond strength when using reactive multilayers for bonding.

Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS2 FETs. The dominant sources of hysteresis reported include charge trapping at the channel-dielectric interface and the adsorption/desorption of molecules. However, in MoS2 FETs with different channel thicknesses, the specific nature and density of defects contributing to hysteresis remain an intriguing aspect requiring further investigation. This study delves into memristive devices with back-gate modulated channel layers based on CVD-deposited flake-based and thin-film-based MoS2 FETs, with a few-layer (FL) and thin-film (TF) channel thickness. Analysis of current-voltage (I−V) and conductance-frequency (Gp/ω−f) measurements led to the conclusion that the elevated hysteresis observed in TF MoS2 devices, as opposed to FL devices, stems from a substantial contribution from intrinsic defects within the channel volume, surpassing that of interface defects. This study underscores the significance of considering both intrinsic defects within the bulk and the interface defects of the channel when analyzing hysteresis in MoS2 FETs, particularly in TF FETs. The selection between FL and TF MoS2 devices depends on the requirements for memristive applications, considering factors such as hysteresis tolerance and scaling capabilities.