A novel class of sensors for system integrative concepts in biotechnological applications. - In: NSTI BioNano, (2005), S. 489-492
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN. - In: Journal of applied physics, ISSN 1089-7550, Bd. 98 (2005), 9, 093508, insges. 6 S.
https://doi.org/10.1063/1.2126786
Parametric study of the streak breakdown mechanism in Hartmann flow. - In: Fundamental and applied MHD, (2005), S. 125-128
Surface reaction of C60 with atomic hydrogen: formation of a protecting hydrocarbon layer. - In: Fullerenes, nanotubes & carbon nanostructures, ISSN 1536-4046, Bd. 13.2005, Suppl. 1, S. 131-138
The interaction of a single domain C60/InP(0 0 1)-(2x4) film during exposure to atomic hydrogen was investigated. At low hydrogen dosing, a high reactivity of the C60 molecules was detected. Presumably, the cracking of fullerene cages follows from a fast destruction of the molecular order. High dosing leads, by chemical modification, to the formation of a stable coverage of hydrocarbons, which is promising for future technological applications.
http://dx.doi.org/10.1081/FST-200039235
Lithium adsorption on TiO2: studies withe electron spectroscopies (MIES and UPS). - In: Surface and interface analysis, ISSN 1096-9918, Bd. 37 (2005), 1, S. 83-89
http://dx.doi.org/10.1002/sia.2014
MIES and UPS(HeI) studies on reduced TiO 2 (110). - In: Surface and interface analysis, ISSN 1096-9918, Bd. 37 (2005), 1, S. 77-82
http://dx.doi.org/10.1002/sia.2013
VUV-XUV dielectric function of InN. - 3 S. = 1,19 MB, TextCD-ROM-Ausg.: Highlights / Annual report 2004 // Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H. - Berlin : BESSY, 2005, S. 413-415
http://www.db-thueringen.de/servlets/DocumentServlet?id=6256
Dielectric function and critical points of the band structure for hexagonal and cubic GaN and AlN. - Ilmenau : Univ.-Bibliothek. - 3 S. = 1,06 MB, TextCD-ROM-Ausg.: Highlights / Annual report 2004 // Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H. - Berlin : BESSY, 2005, S. 206-208
http://www.db-thueringen.de/servlets/DocumentServlet?id=6255
Near-field wave-function spectroscopy of excitons and biexcitons. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 71 (2005), 3, S. 035347, insges. 5 S.
Improvements in spatial resolution of near-field spectroscopy have recently allowed for wave-function imaging of single excitons and biexcitons localized in semiconductor quantum wells. Surprisingly, the apparent extent of the biexciton wave function was found to be considerably reduced compared to a single exciton. We analyze theoretically the image contrast in general near-field wave-function mapping, taking into account the finite spatial resolution of the experiment. In particular, we show that due to the nonlinear nature of biexciton spectroscopy, a smaller biexciton image size is expected even if the spatial resolution is insufficient to resolve the wave functions.
http://dx.doi.org/10.1103/PhysRevB.71.035347
Theory of field-induced spin reorientation transition in thin Heisenberg films. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 71 (2005), 2, S. 024428, insges. 7 S.
We consider the spin reorientation transition in a ferromagnetic Heisenberg monolayer with a second-order single-ion anisotropy as a function of temperature and external field. Up to now analytical methods give satisfying results only for the special case that the external field is aligned parallel to the easy axis of the crystal. We propose a theory based on a generalization of the Callen decoupling, which can be used for an arbritrary direction of the external field. Excellent agreement between our results and quantum Monte Carlo data is found for the field-induced reorientation at finite temperatures. Additionally, we discuss the temperature dependence of the transition in detail.
http://dx.doi.org/10.1103/PhysRevB.71.024428