Surface modifications of AlGaN/GaN sensors for water based nano- and picodroplets [chemical and biosensors]. - In: Proceedings of IEEE sensors 2004, (2004), S. 1007-1010
New solutions for inspection contrast tuning, enhanced chemical durability, and a new ultrahigh-transmission PSM. - In: 24th Annual BACUS Symposium on Photomask Technology, (2004), S. 659-668
Anisotropy of the dielectric function for hexagonal InN. - 3 S. = 758,9 KB, TextCD-ROM-Ausg.: Highlights / Annual report 2003 // Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H. - Berlin : BESSY, 2004, S. 377-379
http://www.db-thueringen.de/servlets/DocumentServlet?id=6252
Charge degrees of freedom in frustrated lattice structures. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 70 (2004), 24, S. 245113, insges. 11 S.
We study numerically spinless fermions with strong nearest-neighbor repulsion V on frustrated lattice structures that show macroscopically many ground states in the absence of a kinetic energy term (hopping term). A finite hopping amplitude t lifts the macroscopic degeneracy and leads to a small number of degenerate ground states. These can be characterized by topological quantum numbers and transformation properties under symmetry operations such as particle-hole interchange. Results for the criss-crossed checkerboard lattice (two-dimensional pyrochlore lattice) with up to 32 fermions support the scenario that translational invariance is restored in the thermodynamic limit, making half-charged quasiparticles possible. A finite entropy of approximately (3?4)ln(4?3) per site is released at low temperatures kBT?tџ?Vø , much below the bare energies t,V . This is familiar from the widely studied models involving spins on frustrated lattices, but in a spinless-fermion model these low-energy excitations are necessarily related to charge degrees of freedom.
http://dx.doi.org/10.1103/PhysRevB.70.245113
Dielectric response in strongly disordered materials: analytic approaches. - In: Zeitschrift für physikalische Chemie, ISSN 2196-7156, Bd. 218 (2004), 12, S. 1375-1384
http://dx.doi.org/10.1524/zpch.218.12.1375.53829
Static and time dependent density functional theory with internal degrees of freedom: merits and limitations demonstrated for the potts model. - In: Journal of statistical physics, ISSN 1572-9613, Bd. 114 (2004), 3/4, S. 1115-1125
http://dx.doi.org/10.1023/B:JOSS.0000012518.27400.2a
Quasicrystalline order in binary dipolar systems. - In: The European physical journal, ISSN 1434-6036, Bd. 42 (2004), 1, S. 85-94
https://doi.org/10.1140/epjb/e2004-00359-6
A novel class of sensors for system integrative concepts in biotechnological applications. - In: Technische Systeme für Biotechnologie und Umwelt, (2004), S. 163-169
Photoluminescence of epitaxial CuGaS2 on Si(111): model for intrinsic defect levels. - In: Thin solid films, ISSN 1879-2731, Bd. 451/452 (2004), S. 241-244
http://dx.doi.org/10.1016/j.tsf.2003.10.120
The dielectric function of a GaAs/AlGaAs single quantum well: calculation and comparison with experiment. - In: Thin solid films, ISSN 1879-2731, Bd. 450 (2004), 1, S. 199-202
http://dx.doi.org/10.1016/j.tsf.2003.10.072