Transport in disordered ionic conductors. - In: Mass and charge transport in inorganic materials II, (2003), S. 159-170
Correlation between strain, optical and electrical properties of InN grown by MBE. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 7, S. 2818-2821
http://dx.doi.org/10.1002/pssc.200303419
Nucleation behavior of n-alkane microdroplets in an electrodynamic balance. - In: The journal of physical chemistry, ISSN 1520-5207, Bd. 107 (2003), 15, S. 3636-3643
The nucleation behavior of n-alkane droplets with carbon numbers ranging from 14 to 17 was observed in an electrodynamic balance. Changes in the elastic light scattering pattern of the single levitated microdroplets indicate the phase transition liquid to solid. Cooling/heating experiments showed larger supercooling temperatures than expected for alkane droplets with an alkane/air interface. Measurements of the nucleation rates of C15H32 and C17H36 gave additional information about the dynamics of the nucleation process and allow to distinguish homogeneous from heterogeneous nucleation.
http://dx.doi.org/10.1021/jp0205362
Description of far-from-equilibrium processes by mean-field lattice gas models. - In: Advances in physics, ISSN 1460-6976, Bd. 52 (2003), 6, S. 523-638
http://dx.doi.org/10.1080/00018730310001615932
Spin precession in disordered systems: anomalous relaxation due to heavy-tailed field distributions. - In: epl, ISSN 1286-4854, Bd. 62 (2003), 3, S. 439-445
http://dx.doi.org/10.1209/epl/i2003-00415-5
Real space renormalization group approach to spin-glass dynamics. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 68 (2003), 6, S. 060404, insges. 4 S.
http://dx.doi.org/10.1103/PhysRevB.68.060404
The freezing of n-Alkanes C15H32 and C17H36: an unsual mechanism of homogeneous nucleation. - In: Zeitschrift für physikalische Chemie, ISSN 2196-7156, Bd. 217 (2003), 12, S. 1597-1611
http://dx.doi.org/10.1524/zpch.217.12.1597.20473
Electroreflectance and photoreflectance studies of electric fields in Pt/GaN Schottky diodes and AlGaN/GaN heterostructures. - In: GaN and related alloys - 2002, 2003, S. L3.57.1-L3.57.6, insges. 6 S.
Dielectric function of "narrow" band gap InN. - In: GaN and related alloys - 2002, 2003, S. L5.9.1-L5.9.6, insges. 6 S.
Optical properties of epitaxial CuGaS 2 layers on Si(111). - In: Journal of physics and chemistry of solids, Bd. 64 (2003), 9/10, S. 1781-1785
http://dx.doi.org/10.1016/S0022-3697(03)00199-9