Truschin, Yuri V.; Yankov, Rossen, A.; Kharlamov, Vladimir S.; Kulikov, Dmitri V.; Tsigankov, D. N.; Kreissig, Ulrich; Voelskow, Matthias; Pezoldt, Jörg; Skorupa, Wolfgang
A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high-dose N+ and Al+ co-implants in 6H-SiC. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 757-760
Im Titel sind "1-x" und "x" tiefgestellt, "+" hochgestellt
A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high-dose N+ and Al+ co-implants in 6H-SiC. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 757-760
Im Titel sind "1-x" und "x" tiefgestellt, "+" hochgestellt
Yankov, Rossen, A.; Fukarek, Wolfgang; Voelskow, Matthias; Pezoldt, Jörg; Skorupa, Wolfgang
Ion beam synthesis: a novel method of producing (SiC)1-x(AlN)x layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 753-756
Im Titel sind "1-x" und "x" tiefgestellt
Ion beam synthesis: a novel method of producing (SiC)1-x(AlN)x layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 753-756
Im Titel sind "1-x" und "x" tiefgestellt
Werninghaus, Thomas; Zahn, Dietrich R. T.; Yankov, Rossen A.; Mücklich, Arndt; Pezoldt, Jörg
Cross-sectional micro-Raman spectroscopy: a tool for structural investigations of thin polytypic SiC layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 661-664
Cross-sectional micro-Raman spectroscopy: a tool for structural investigations of thin polytypic SiC layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 661-664
Pezoldt, Jörg;
Yankov, Rossen A.; Voelskow, Matthias; Brauer, Gerhard; Anwand, W.; Heera, Viton; Skorupa, Wolfgang; Coleman, P. G.
Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC. - In: Defect recognition and image processing in semiconductors 1997, (1998), S. 335-338
Im Titel ist "1-x" und "x" tiefgestellt, "+" hochgestellt
Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC. - In: Defect recognition and image processing in semiconductors 1997, (1998), S. 335-338
Im Titel ist "1-x" und "x" tiefgestellt, "+" hochgestellt
Cimalla, Volker; Stauden, Thomas; Ecke, Gernot; Scharmann, Friedhelm; Eichhorn, Gerd; Pezoldt, Jörg; Sloboshanin, Sergej; Schäfer, Jürgen A.
Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy. - In: Applied physics letters, ISSN 1077-3118, Bd. 73 (1998), 24, S. 3542-3544
http://dx.doi.org/10.1063/1.122801
Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy. - In: Applied physics letters, ISSN 1077-3118, Bd. 73 (1998), 24, S. 3542-3544
http://dx.doi.org/10.1063/1.122801
Ecke, Gernot; Rößler, Hans; Cimalla, Volker; Pezoldt, Jörg; Stauden, Thomas
Auger investigations of thin SiC films. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 361 (1998), 6, S. 564-568
http://dx.doi.org/ 10.1007/s002160050949
Auger investigations of thin SiC films. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 361 (1998), 6, S. 564-568
http://dx.doi.org/ 10.1007/s002160050949
Rainova, Yu. P.; Antonenko, K. I.; Pezoldt, Jörg; Schenk, André
On the entrance effects and the influence of buoyancy forces on the fluid flow in RTP reactors. - In: Rapid thermal and integrated processing VII, (1998), S. 39-44
On the entrance effects and the influence of buoyancy forces on the fluid flow in RTP reactors. - In: Rapid thermal and integrated processing VII, (1998), S. 39-44
Kulikov, Dmitri V.; Trushin, Yuri V.; Yankov, Rossen A.; Pezoldt, Jörg; Skorupa, Wolfgang
Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions. - In: Technical physics letters, ISSN 1090-6533, Bd. 24 (1998), 1, S. 17-19
http://dx.doi.org/10.1134/1.1261975
Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions. - In: Technical physics letters, ISSN 1090-6533, Bd. 24 (1998), 1, S. 17-19
http://dx.doi.org/10.1134/1.1261975
Pezoldt, Jörg; Stauden, Thomas; Cimalla, Volker; Ecke, Gernot; Romanus, Henry; Eichhorn, Gerd
Growth of SiC layers on (111) Si by solid source molecular beam epitaxy. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 251-254
Growth of SiC layers on (111) Si by solid source molecular beam epitaxy. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 251-254
Ecke, Gernot; Eichhorn, Gerd; Pezoldt, Jörg; Reinhold, C.; Stauden, Thomas; Supplieth, Frank
Deposition of aluminium nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition. - In: Surface and coatings technology, ISSN 1879-3347, Bd. 98 (1998), 1/3, S. 1503-1509
https://doi.org/10.1016/S0257-8972(97)00282-X
Deposition of aluminium nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition. - In: Surface and coatings technology, ISSN 1879-3347, Bd. 98 (1998), 1/3, S. 1503-1509
https://doi.org/10.1016/S0257-8972(97)00282-X