Ecke, Gernot; Rößler, Hans; Cimalla, Volker; Pezoldt, Jörg
Interpretation of auger depth profiles of thin SiC layers on Si. - In: Microchimica acta, ISSN 1436-5073, Bd. 125 (1997), 1/4, S. 219-222
https://doi.org/10.1007/BF01246186
Interpretation of auger depth profiles of thin SiC layers on Si. - In: Microchimica acta, ISSN 1436-5073, Bd. 125 (1997), 1/4, S. 219-222
https://doi.org/10.1007/BF01246186
Yankov, Rossen A.; Voelskow, Matthias; Kreissig, W.; Kulikov, Dmitri V.; Pezoldt, Jörg; Skorupa, Wolfgang; Trushin, Yuri V.; Kharlamov, Vladimir S.; Tsigankov, D. N.
High-temperature high-dose implantation of N + and Al + ions in 6H-SiC. - In: Technical physics letters, ISSN 1090-6533, Bd. 23 (1997), 8, S. 617-620
http://dx.doi.org/10.1134/1.1261883
High-temperature high-dose implantation of N + and Al + ions in 6H-SiC. - In: Technical physics letters, ISSN 1090-6533, Bd. 23 (1997), 8, S. 617-620
http://dx.doi.org/10.1134/1.1261883
Yankov, Rossen A.; Hatzopoulos, N.; Fukarek, Wolfgang; Voelskow, Matthias; Heera, Viton; Pezoldt, Jörg; Skorupa, Wolfgang
Formation of buried layers of (SiC)1-x(AlN)x in 6H-SiC using ion-beam synthesis. - In: Materials modification and synthesis by ion beam processing, (1997), S. 271-276
Formation of buried layers of (SiC)1-x(AlN)x in 6H-SiC using ion-beam synthesis. - In: Materials modification and synthesis by ion beam processing, (1997), S. 271-276
Ecke, Gernot; Rößler, Hans; Wöhner, Thomas; Cimalla, Volker; Scheiner, Jörg; Hofmann, Siegfried
Simulation of Auger depth profiles of thin SiC - layers with respect to atomic mixing, auger electron escape depth and surface roughness. - In: ECASIA 97, (1997), S. 423-426
Simulation of Auger depth profiles of thin SiC - layers with respect to atomic mixing, auger electron escape depth and surface roughness. - In: ECASIA 97, (1997), S. 423-426
Wöhner, Thomas; Ecke, Gernot; Rößler, Hans; Hofmann, Siegfried
The influence of surface roughness and sample tilt angle on AES itensity. - In: ECASIA 97, (1997), S. 419-422
The influence of surface roughness and sample tilt angle on AES itensity. - In: ECASIA 97, (1997), S. 419-422
Romanus, Henry; Cimalla, Volker; Kromka, Alexander; Scheiner, Jörg; Spieß, Lothar; Pezoldt, Jörg
Atomic force microscopy investigations of rapid thermal carbonized silicon. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 47 (1997), 3, S. 274-278
http://dx.doi.org/10.1016/S0921-5107(97)00045-7
Atomic force microscopy investigations of rapid thermal carbonized silicon. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 47 (1997), 3, S. 274-278
http://dx.doi.org/10.1016/S0921-5107(97)00045-7
Spieß, Lothar; Nennewitz, Olaf; Weishart, H.; Lindner, Jörg; Skorupa, Wolfgang; Romanus, Henry; Erler, Frank; Pezoldt, Jörg
Aluminium implantation of p-SiC for ohmic contacts. - In: Diamond and related materials, ISSN 0925-9635, Bd. 6 (1997), 10, S. 1414-1419
http://dx.doi.org/10.1016/S0925-9635(97)00047-2
Aluminium implantation of p-SiC for ohmic contacts. - In: Diamond and related materials, ISSN 0925-9635, Bd. 6 (1997), 10, S. 1414-1419
http://dx.doi.org/10.1016/S0925-9635(97)00047-2
Bendler, Michael; Moldenhauer, Frank; Cimalla, Volker; Pezoldt, Jörg
Regelung eines RTP-Reaktors mit Gain-Scheduling. - In: [Vortragsreihen, (1997), S. 697-704
Regelung eines RTP-Reaktors mit Gain-Scheduling. - In: [Vortragsreihen, (1997), S. 697-704
Rößler, Hans
Verbundprojekt: Plasma- und thermisch gestützte Oberflächentechnologien - PLATHO : Teilvorhaben: Photo-, Thermo-CVD und Schichtanalytik ; Schlußbericht, Bearbeitungsdauer: 01.07.92 - 30.06.96
[Electronic ed.]. - Ilmenau. - 16 p. = 104 kB, textContract no.: BMFT/BMBF 13 MV 0227
https://edocs.tib.eu/files/e001/236588257.pdf
Verbundprojekt: Plasma- und thermisch gestützte Oberflächentechnologien - PLATHO : Teilvorhaben: Photo-, Thermo-CVD und Schichtanalytik ; Schlußbericht, Bearbeitungsdauer: 01.07.92 - 30.06.96
[Electronic ed.]. - Ilmenau. - 16 p. = 104 kB, textContract no.: BMFT/BMBF 13 MV 0227
Service centre, film technology
https://edocs.tib.eu/files/e001/236588257.pdf
Spieß, Lothar;
Nennewitz, Olaf; Pezoldt, Jörg
Improved ohmic contacts to p-type 6H-SiC. - In: Silicon carbide and related materials 1995, (1996), S. 585-588
Improved ohmic contacts to p-type 6H-SiC. - In: Silicon carbide and related materials 1995, (1996), S. 585-588