Schenk, Andre; Rainova, Yu. P.; Pezoldt, Jörg
Simulation von Strömungsprozessen in einem RTP-Reaktor. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 8 S.
Simulation von Strömungsprozessen in einem RTP-Reaktor. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 8 S.
Cimalla, Volker; Scheiner, Jörg; Ecke, Gernot; Friedrich, M.; Goldhahn, Rüdiger; Zahn, Dietrich R. T.; Pezoldt, Jörg
The measurement of the thickness of thin SiC layers on silicon. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 641-644
The measurement of the thickness of thin SiC layers on silicon. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 641-644
Shokhovets, Sviatoslav; Goldhahn, Rüdiger; Cimalla, Volker; Cheng, T. S.; Foxon, C. Thomas
Analysis of reflectivity measurements for GaN films grown on GaAs: influence of surface roughness and interface layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1347-1350
Analysis of reflectivity measurements for GaN films grown on GaAs: influence of surface roughness and interface layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1347-1350
Werninghaus, Thomas; Friedrich, M.; Cimalla, Volker; Scheiner, Jörg; Goldhahn, Rüdiger; Zahn, Dietrich R. T.; Pezoldt, Jörg
Optical characterization of MBE grown cubic and hexagonal SiC films on Si(111)1. - In: Diamond and related materials, ISSN 0925-9635, Bd. 7 (1998), 9, S. 1385-1389
http://dx.doi.org/10.1016/S0925-9635(98)00224-6
Optical characterization of MBE grown cubic and hexagonal SiC films on Si(111)1. - In: Diamond and related materials, ISSN 0925-9635, Bd. 7 (1998), 9, S. 1385-1389
http://dx.doi.org/10.1016/S0925-9635(98)00224-6
Žochovec, Svjatoslav; Goldhahn, Rüdiger; Cimalla, Volker; Cheng, T. S.; Foxon, Tom
Reflectivity study of hexagonal GaN films grown on GaAs: surface roughness, interface layer, and refractive index. - In: Journal of applied physics, ISSN 1089-7550, Bd. 84 (1998), 3, S. 1561-1566
https://doi.org/10.1063/1.368223
Reflectivity study of hexagonal GaN films grown on GaAs: surface roughness, interface layer, and refractive index. - In: Journal of applied physics, ISSN 1089-7550, Bd. 84 (1998), 3, S. 1561-1566
https://doi.org/10.1063/1.368223
Cimalla, Volker;
Karbonisieren von Siliziumsubstraten. - Aachen : Shaker, 1998. - IV, 166 S.. - (Berichte aus der Physik) Zugl.: Ilmenau : Techn. Univ., Diss., 1998
ISBN 3826544889
Literaturverz. S. 123 - 136
Karbonisieren von Siliziumsubstraten. - Aachen : Shaker, 1998. - IV, 166 S.. - (Berichte aus der Physik) Zugl.: Ilmenau : Techn. Univ., Diss., 1998
ISBN 3826544889
Literaturverz. S. 123 - 136
Rainova, Yu. P.; Antonenko, K. I.; Pezoldt, Jörg; Schenk, André; Eichhorn, Gerd
Holographic interferometry of temperature distribution in a RTP reactor. - In: Chemical vapor deposition, (1997), S. 717-724
Holographic interferometry of temperature distribution in a RTP reactor. - In: Chemical vapor deposition, (1997), S. 717-724
Pezoldt, Jörg; Cimalla, Volker; Stauden, Thomas; Ecke, Gernot; Eichhorn, Gerd; Scharmann, Friedhelm; Schipanski, Dagmar
Chemical conversion of Si to SiC by solid source MBE and RTCVD. - In: Diamond and related materials, ISSN 0925-9635, Bd. 6 (1997), 10, S. 1311-1315
https://doi.org/10.1016/S0925-9635(97)00087-3
Chemical conversion of Si to SiC by solid source MBE and RTCVD. - In: Diamond and related materials, ISSN 0925-9635, Bd. 6 (1997), 10, S. 1311-1315
https://doi.org/10.1016/S0925-9635(97)00087-3
Ecke, Gernot; Rößler, Hans; Cimalla, Volker; Liday, Jozef
AES depth profiles of thin SiC-layers - simulation of ion beam induced mixing. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 358 (1997), 1, S. 355-357
http://dx.doi.org/10.1007/s002160050428
AES depth profiles of thin SiC-layers - simulation of ion beam induced mixing. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 358 (1997), 1, S. 355-357
http://dx.doi.org/10.1007/s002160050428
Cimalla, Volker; Pezoldt, Jörg; Eichhorn, Gerd
A growth model for the carbonization of silicon surfaces. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 46 (1997), 1/3, S. 199-202
http://dx.doi.org/10.1016/S0921-5107(96)01964-2
A growth model for the carbonization of silicon surfaces. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 46 (1997), 1/3, S. 199-202
http://dx.doi.org/10.1016/S0921-5107(96)01964-2