Tagungsbeiträge

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Hoffmann, Martin;
Anwendungen nanostrukturierter Grenzflächen in Mikrosystemen am Beispiel von Si-Gras und Herausforderungen für die Forschung. - In: Proceedings, ISBN 978-3-8007-3183-1, (2009), insges. 4 S.

Peyre, Hervé; Pezoldt, Jörg; Voelskow, Matthias; Skorupa, Wolfgang; Camassel, Jean
SIMS investigation of Ge x(4H-SiC) 1-x solid solutions synthesized by Ge-ion implantation up to x=0.2. - In: Silicon carbide and related materials 2008, (2009), S. 465-468

http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.465
Pezoldt, Jörg;
Formation of different carbon phases on SiC. - In: Silicon carbide and related materials 2008, (2009), S. 227-230

http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.227
Geza, Vadims; Jakovics, Andris; Halbedel, Bernd; Krieger, Uwe
Viscous low-conducting glass melt flow in output of glass processing system caused by two independent EM field sources. - In: 6th International Conference on Electromagnetic Processing of Materials, (2009), S. 537-540

The main field of this work is outlet of special melting system numerical simulation. Theses glasses needs appropriate operating conditions to achieve godd thermal and chemical homogeneity. Results show differences between use of different geometries and EM impact parameters, where optimization criteria was temperature homogeneity in melt.



Hamann, Bernd; Lüdtke, Ulrich; Schadewald, Uwe
Modular equipment for thermal analysis in magnetic DC fields up to 5 Tesla. - In: 6th International Conference on Electromagnetic Processing of Materials, (2009), S. 423-424

Pezoldt, Jörg; Kups, Thomas; Stauden, Thomas; Schröter, Bernd
Polarity determination and control of SiC grown on Si. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 165 (2009), 1/2, S. 28-33

http://dx.doi.org/10.1016/j.mseb.2009.03.015
Tschumak, Elena; Tonisch, Katja; Pezoldt, Jörg; As, Donat J.
Comparative study of 3C-GaN grown on semi-insulating 3C-SiC/Si(100) substrates. - In: Silicon carbide and related materials 2008, (2009), S. 943-946

http://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.943
Stubenrauch, Mike; Schwandt, Morris; Hecht, Siegmar; Hoffmann, Martin
Reliability aspects of mechanical interlocking bond interfaces with nanostructured silicon grass. - In: 2009 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, (DTIP), ISBN 978-1-424-43874-7, (2009), S. 167-169

Kups, Thomas; Tonisch, Katja; Voelskow, Matthias; Skorupa, Wolfgang; Konkin, Alexander L.; Pezoldt, Jörg
Structure and lattice location of Ge implanted 4H-SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 600/603 (2009), S. 623-626

http://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.623
Stauden, Thomas; Niebelschütz, Florentina; Tonisch, Katja; Cimalla, Volker; Ecke, Gernot; Haupt, Christian; Pezoldt, Jörg
Isotropic etching of SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 600/603 (2009), S. 651-654

http://dx.doi.org/10.4028/www.scientific.net/MSF.600-603.651