Schadewald, Uwe; Halbedel, Bernd; Romanus, Henry; Hülsenberg, Dagmar
New results of the crystallization behaviour of hexagonal barium ferrites from a glassy matrix. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 941-944
http://dx.doi.org/10.1002/mawe.200600084
New results of the crystallization behaviour of hexagonal barium ferrites from a glassy matrix. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 941-944
http://dx.doi.org/10.1002/mawe.200600084
Niebelschütz, Merten; Ecke, Gernot; Cimalla, Volker; Tonisch, Katja; Ambacher, Oliver
Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 937-940
http://dx.doi.org/10.1002/mawe.200600083
Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 937-940
http://dx.doi.org/10.1002/mawe.200600083
Mahr, Petra; Halbedel, Bernd
Characterisation of the deagglomeration behaviour of nanoscaled barium hexaferrite powders by measurement of electrokinetic effects. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 933-936
http://dx.doi.org/10.1002/mawe.200600081
Characterisation of the deagglomeration behaviour of nanoscaled barium hexaferrite powders by measurement of electrokinetic effects. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 933-936
http://dx.doi.org/10.1002/mawe.200600081
Cimalla, Volker; Lebedev, Vadim; Morales, Francisco M.; Niebelschütz, Merten; Ecke, Gernot; Goldhahn, Rüdiger; Ambacher, Oliver
Origin of n-type conductivity in nominally undoped InN. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 924-928
http://dx.doi.org/10.1002/mawe.200600082
Origin of n-type conductivity in nominally undoped InN. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 924-928
http://dx.doi.org/10.1002/mawe.200600082
Cimalla, Irina Nicoleta; Will, Florentina; Tonisch, Katja; Niebelschütz, Merten; Cimalla, Volker; Lebedev, Vadim; Kittler, Gabriel; Himmerlich, Marcel; Krischok, Stefan; Schäfer, Jürgen A.; Gebinoga, Michael; Schober, Andreas; Friedrich, Thomas; Ambacher, Oliver
Einfluss von Prozessen der Bauelementtechnologie auf die Oberflächeneigenschaften und die Biokompatibilität von Gruppe III-Nitrid-basierenden Sensoren :
Impact of device technology processes on the surface properties and biocompatibility of group III nitride based sensors. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 919-923
http://dx.doi.org/10.1002/mawe.200600078
Einfluss von Prozessen der Bauelementtechnologie auf die Oberflächeneigenschaften und die Biokompatibilität von Gruppe III-Nitrid-basierenden Sensoren :
Impact of device technology processes on the surface properties and biocompatibility of group III nitride based sensors. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 919-923
http://dx.doi.org/10.1002/mawe.200600078
Belau, Stefan; Halbedel, Bernd; Hülsenberg, Dagmar
High coercive barium hexaferrite powders by partial Ba 2+ - and Fe 3+ -substitution for magnetic sensor applications. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 909-914
http://dx.doi.org/10.1002/mawe.200600076
High coercive barium hexaferrite powders by partial Ba 2+ - and Fe 3+ -substitution for magnetic sensor applications. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 909-914
http://dx.doi.org/10.1002/mawe.200600076
Kulikov, Dmitrii V.; Schmidt, Alexander A.; Korolev, Sergey A.; Morales, Francisco M.; Stauden, Thomas; Trushin, Yuri V.; Pezoldt, Jörg
Simulation of quality of SiC/Si interface during MBE deposition of C on Si. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 929-932
http://dx.doi.org/10.1002/mawe.200600080
Simulation of quality of SiC/Si interface during MBE deposition of C on Si. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 929-932
http://dx.doi.org/10.1002/mawe.200600080
Lebedev, Vadim; Cimalla, Volker; Baumann, Tim; Ambacher, Oliver; Morales Sánchez, Francisco Miguel; Lozano, Juan Gabriel; González, David
Effect of dislocations on electrical and electron transport properties of InN thin films : II. density and mobility of the carriers. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 9, 094903, insges. 8 S.
https://doi.org/10.1063/1.2363234
Effect of dislocations on electrical and electron transport properties of InN thin films : II. density and mobility of the carriers. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 9, 094903, insges. 8 S.
https://doi.org/10.1063/1.2363234
Lebedev, Vadim; Cimalla, Volker; Pezoldt, Jörg; Himmerlich, Marcel; Krischok, Stefan; Schäfer, Jürgen A.; Ambacher, Oliver; Morales Sánchez, Francisco Miguel; Lozano, Juan Gabriel; González, David
Effect of dislocations on electrical and electron transport properties of InN thin films : I. strain relief and formation of a dislocation network. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 9, 094902, insges. 13 S.
https://doi.org/10.1063/1.2363233
Effect of dislocations on electrical and electron transport properties of InN thin films : I. strain relief and formation of a dislocation network. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 9, 094902, insges. 13 S.
https://doi.org/10.1063/1.2363233
Shokhovets, Sviatoslav; Gobsch, Gerhard; Ambacher, Oliver
Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 74 (2006), 15, S. 155209, insges. 11 S.
http://dx.doi.org/10.1103/PhysRevB.74.155209
Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 74 (2006), 15, S. 155209, insges. 11 S.
http://dx.doi.org/10.1103/PhysRevB.74.155209