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Dashtestani, Ashkan Djaberi; Moeinian, Ardeshir; Biskupek, Johannes; Strehle, Steffen
Contamination-assisted rather than metal catalyst-free bottom-up growth of silicon nanowires. - In: Advanced materials interfaces, ISSN 2196-7350, Bd. 8 (2021), 22, 2101121, insges. 9 S.

Well-established metal-catalyzed vapor-liquid-solid (VLS) growth represents still undoubtedly the key technology for bottom-up synthesis of single-crystalline silicon nanowires (SiNWs). Although various SiNW applications are demonstrated, electrical and optical properties are exposed to the inherent risk of electronic deep trap state formation by metal impurities. Therefore, metal catalyst-free growth strategies are intriguing. The oxid-assisted SiNW synthesis is explored and it is shown that contamination control is absolutely crucial. Slightest metal impurities, such as iron, are sufficient to trigger SiNW growth, calling into question true metal catalyst-free SiNW synthesis. Therefore, the term contamination-assisted is rather introduced and it is shown that contamination-assisted SiNW growth is determined by the chemical surface treatment (e.g., with KOH solution), but also by the crystal orientation of a silicon substrate. SiNWs are grown in this regards in a reproducible manner, but so far with a distinct tapering, using a conventional gas-phase reactor system at temperatures of about 680 ˚C and monosilane (SiH4) as the precursor gas. The synthesized SiNWs show convincing electrical properties compared to Au-catalyzed SiNWs. Nevertheless, contamination-assisted growth of SiNWs appears to be an important step toward bottom-up synthesis of high-quality SiNWs with a lower risk of metal poisoning, such as those needed for CMOS and other technologies.



https://doi.org/10.1002/admi.202101121
Cheng, Pengfei; Ziegler, Mario; Ripka, Valentin; Wang, Dong; Wang, Hongguang; Aken, Peter Antonie van; Schaaf, Peter
Bio-inspired self-assembly of large area 3D AgSiO2 plasmonic nanostructures with tunable broadband light harvesting. - In: Applied materials today, ISSN 2352-9407, Bd. 25 (2021), 101238

Tremendous efforts have been made to fabricate large-scale plasmonic nanostructures, which show wide applications in surface plasmon resonance (SPR) sensing, catalytic conversion, photothermal conversion, optoelectronics, photothermal therapy. However, unable to fabricate over 5 cm^2 plasmonic nanostructures with good controllability hinders their further applications. Here, super large-scale (153 cm^2) 3D AgSiO2 hybrid plasmonic nanostructures with adjustable and ultra-broadband light absorption are fabricated by a simple and controllable two-step approach. The metastable atomic layer deposition (MS-ALD) is combined with physical vapor deposition (PVD) to generate these structures in a self-assembly manner. The structures look like coral tentacles. These excellent properties are attributed to multiple forward scatterings and extinction effects produced by Ag@SiO2 nanostructures. Using 3D Ag@SiO2 plasmonic nanostructures as light absorber for bottom-heating-based evaporation, the water evaporation rate remarkably improves seven times under 1 Sun than that in dark condition. Our results pave the avenue for developing super large-scale Ag-based plasmonic nanostructure with potential applications in solar energy conversion.



https://doi.org/10.1016/j.apmt.2021.101238
Nandy, Manali; Paszuk, Agnieszka; Feifel, Markus; Koppka, Christian; Kleinschmidt, Peter; Dimroth, Frank; Hannappel, Thomas
A route to obtaining low-defect III-V epilayers on Si(100) utilizing MOCVD. - In: Crystal growth & design, ISSN 1528-7505, Bd. 21 (2021), 10, S. 5603-5613

Low-defect III-V multilayer structures grown on Si(100) open opportunities for a wide range of cost-effective high-performance photovoltaic and optoelectronic devices. For that, (Al)GaP epilayers prepared almost lattice-matched on Si(100) substrates can serve as high-quality virtual substrates for subsequent heteroepitaxial growth. The evolution of crystal defects, such as stacking fault pyramids or threading dislocations, needs to be impeded already during the first preparation step, the III-V-on-Si nucleation, as they tend to propagate into the subsequently grown layers and increase nonradiative electron-hole recombination rates, which finally degrade the device performance. We establish a ternary GaP/AlP pulsed nucleation process on Si(100) substrates fabricated by metalorganic chemical vapor deposition, and compare it to the defect evolution from pure GaP nucleation layers (NLs). The entire procedure was optically monitored in situ using reflection anisotropy spectroscopy. Crystal defects were investigated by electron channeling contrast imaging. GaP grown on GaP/AlP NLs exhibits drastically reduced densities of threading dislocations and stacking faults by 1 and 2 orders of magnitude, respectively, compared to buffer layers grown on binary GaP NLs. We observed that the surface morphology at the initial stage of growth of these buffer layers is significantly smoother compared to the buffer layers grown on pure GaP NLs using atomic force microscopy. The proposed nucleation procedure here is supposed to substantially improve the crystalline quality of III-V buffer layers integrated on Si(100) wafers.



https://doi.org/10.1021/acs.cgd.1c00410
Sauni Camposano, Yesenia Haydee; Riegler, Sascha Sebastian; Jaekel, Konrad; Schmauch, Jörg; Pauly, Christoph; Schäfer, Christian; Bartsch, Heike; Mücklich, Frank; Gallino, Isabella; Schaaf, Peter
Phase transformation and characterization of 3D reactive microstructures in nanoscale Al/Ni multilayers. - In: Applied Sciences, ISSN 2076-3417, Bd. 11 (2021), 19, 9304, S. 1-13

Reactive multilayer systems represent an innovative approach for potential usage in chip joining applications. As there are several factors governing the energy release rate and the stored chemical energy, the impact of the morphology and the microstructure on the reaction behavior is of great interest. In the current work, 3D reactive microstructures with nanoscale Al/Ni multilayers were produced by alternating deposition of pure Ni and Al films onto nanostructured Si substrates by magnetron sputtering. In order to elucidate the influence of this 3D morphology on the phase transformation process, the microstructure and the morphology of this system were characterized and compared with a flat reactive multilayer system on a flat Si wafer. The characterization of both systems was carried out before and after a rapid thermal annealing treatment by using scanning and transmission electron microscopy of the cross sections, selected area diffraction analysis, and differential scanning calorimetry. The bent shape of multilayers caused by the complex topography of silicon needles of the nanostructured substrate was found to favor the atomic diffusion at the early stage of phase transformation and the formation of two intermetallic phases Al0.42Ni0.58 and AlNi3, unlike the flat multilayers that formed a single phase AlNi after reaction.



https://doi.org/10.3390/app11199304
Eliseyev, Ilya A.; Galimov, Aidar I.; Rakhlin, Maxim V.; Evropeitsev, Evgenii A.; Toropov, Aleksej A.; Davydov, Valery Yu.; Thiele, Sebastian; Pezoldt, Jörg; Shubina, Tatiana V.
Photoluminescence kinetics of dark and bright excitons in atomically thin MoS2. - In: Physica status solidi, ISSN 1862-6270, Bd. 15 (2021), 10, 2100263, insges. 14 S.

The fine structure of the exciton spectrum, containing optically allowed (bright) and forbidden (dark) exciton states, determines the radiation efficiency in nanostructures. Time-resolved microphotoluminescence in MoS2 monolayers (MLs) and bilayers (BLs), both unstrained and compressively strained, in a wide temperature range (10-300 K), is studied to distinguish between exciton states optically allowed and forbidden, both in spin and in momentum, as well as to estimate their characteristic decay times and contributions to the total radiation intensity. The decay times are found to either increase or decrease with increasing temperature, indicating the lowest bright or lowest dark state, respectively. The results unambiguously show that, in an unstrained ML, the spin-allowed state is the lowest for a series of A excitons (1.9 eV), with the dark state being <2 meV higher, and that the splitting energy can increase several times at compression. In contrast, in the indirect exciton series in BLs (1.5 eV), the spin-forbidden state is the lowest, being about 3 meV below the bright one. The strong effect of strain on the exciton spectrum can explain the large scatter among the published data and must be taken into account to realize the desired optical properties of 2D MoS2.



https://doi.org/10.1002/pssr.202100263
Gabryelczyk, Agnieszka; Ivanov, Svetlozar; Bund, Andreas; Lota, Grzegorz
Corrosion of aluminium current collector in lithium-ion batteries: a review. - In: Journal of energy storage, ISSN 2352-152X, Bd. 43 (2021), 103226

Calendar and cycle ageing affects the performance of the lithium-ion batteries from the moment they are manufactured. An important process that occurs as a part of the ageing is corrosion of the current collectors, especially prominent in the case of the aluminium substrate for the positive electrode. Generally, aluminium resists corrosion due to the formation of a non-permeable film of native aluminium oxide. Nevertheless, at certain electrochemical conditions corrosion affects the interface of the current collector. As a consequence of corrosion, the cathode materials lose electrical and mechanical contact with the current collector, leading to capacity and power fading. Therefore, a deeper understanding of this process and effective corrosion inhibition are necessary to prevent the deterioration of the battery performance. This review provides an updated critical overview of the mechanisms of aluminium corrosion, methodologies for analysing this phenomenon, and approaches for its effective mitigation. As the influence of multiple factors on the corrosion process has a central impact, the review discusses how they specifically affect the undergoing processes. Therefore, appropriate examples of important factors like electrolyte composition, thermal conditions and electrochemical parameters are presented to explain the specific mechanism of aluminium corrosion. Since corrosion inhibition is an important technological issue with a tremendous economic impact the review summarises how to achieve this by adjusting the electrochemical system and enhancing the knowledge on the safe operation of the positive electrode.



https://doi.org/10.1016/j.est.2021.103226
Yan, Yong; Liu, Haocen; Liu, Chunyue; Zhao, Yuguo; Liu, Shuzhen; Wang, Dong; Fritz, Mathias; Ispas, Adriana; Bund, Andreas; Schaaf, Peter; Wang, Xiayan
Efficient preparation of Ni-M (M = Fe, Co, Mo) bimetallic oxides layer on Ni nanorod arrays for electrocatalytic oxygen evolution. - In: Applied materials today, ISSN 2352-9407, Bd. 25 (2021), 101185

Fabrication of economic and high-performance electrodes for electrocatalytic oxygen evolution reaction (OER) accounts for a crucial issue associated with developing powerful and practical water splitting systems. In this work, free-standing Ni/Ni-M (M = Fe, Co, Mo) bimetallic oxides core/shell nanorod arrays (Ni/Ni-M NRAs) were prepared through electroless deposition of transition metal species on black nickel sheet (nickel nanorod arrays (Ni NRAs)) followed by electrochemical oxidation. All three types of Ni/Ni-M NRAs demonstrated enhanced electrocatalytic activity toward oxygen evolution reactions (OER). Especially, Ni/Ni-Fe NRAs electrode exhibit small onset potential of 1.535 V at current density of 10 mA&hahog;cm^-2. In contrast, the OER durability of these three samples was distinct. At 500 mV constant overpotential, the current density loss in OER of Ni/Ni-Fe NRAs was merely 13.5% for a period of 20000 s; but Ni/Ni-Mo and Ni/Ni-Co NRAs had almost disappeared catalytic activity under the identical conditions. According to many reports, the results were different for the superior OER stability of Ni-based bimetallic catalysts. Electrochemical analysis revealed that the NRAs structure dramatically improves charge transfer efficiency and electrochemically active surface area (ECSA). The present study might provide a new insight to design and fabricate more practical and high-performance Ni-based electrodes for OER.



https://doi.org/10.1016/j.apmt.2021.101185
Herre, Patrick; Will, Johannes; Dierner, Martin; Wang, Dong; Yokosawa, Tadahiro; Zech, Tobias; Wu, Mingjian; Przybilla, Thomas; Romeis, Stefan; Unruh, Tobias; Peukert, Wolfgang; Spiecker, Erdmann
Rapid fabrication and interface structure of highly faceted epitaxial Ni-Au solid solution nanoparticles on sapphire. - In: Acta materialia, ISSN 1873-2453, Bd. 220 (2021), 117318, insges. 12 S.

Supersaturated Ni-Au solid solution particles were synthesized by rapid solid-state dewetting of bilayer thin films deposited onto c-plane sapphire single-crystals. Rapid thermal annealing above the miscibility gap of the Ni-Au system followed by quenching to room temperature resulted in textured and faceted submicron-sized particles as a function of alloying content in the range of 0-28 at% Au. Morphologically, the observed kinetic crystal shapes are confined by close-packed planes; in addition, high-index facets are identified as a function of alloying content by TEM cross-sectioning and equilibrium crystal shape simulations. All samples exhibit a distinct <111> out-of-plane as well as in-plane texture along densely packed directions. Lattice parameters extracted from independent orthogonal X-ray and electron diffraction techniques prove the formation of a solid solution without tetragonal distortion imposed by the sapphire substrate. At the particle-substrate interface of highly alloyed particles segregation of Au atoms as well as dislocations in stand-off position are found. These observations are in-line with a semi-coherent interface, where Au segregation is triggered by the reduction of the overall strain energy due to: (i) a lower shear modulus on the particle side of the interface, (ii) the shifting of misfit dislocations in stand-off position further away from the stiffer substrate and (iii) a reduction of intrinsic misfit dislocation strain energy on the tensile side. In addition, the mechanical properties of pure and alloyed particles were characterized by in situ compression experiments in the SEM. Typical force-displacement data of defect-free single-crystals were obtained, reaching the theoretical strength of Ni for particles smaller than 400 nm. Alloying changes the mechanical response from an intermittent and discrete plastic flow behavior into a homogeneous deformation regime at large compressive strain.



https://doi.org/10.1016/j.actamat.2021.117318
Biele, Lukas; Schaaf, Peter; Schmid, Florian
Specific electrical contact resistance of copper in resistance welding. - In: Physica status solidi, ISSN 1862-6319, Bd. 218 (2021), 19, 2100224, insges. 11 S.

The electrical contact resistance (ECR) of copper (Cu-ETP R200, soft) contacts for resistance welding (RW) is characterized. ECR plays a major role in the RW process and provides local heat generation between the parts. A special determination method is used on different testing variants to observe the influence of contact pressure (two levels: 68, 155 MPa), contact temperature (20-550 &ring;C), and surface parameters, like roughness or oxide layer thickness, on the specific electrical contact resistance (SECR). For each surface parameter, three different levels are investigated. The study shows decreasing SECR with higher mechanical load on the contact and a more complex behavior for increase in contact temperature. SECR shows a characteristic behavior for contact states near the temperature-dependent tensile strength of the base material for rough and clean surfaces, where SECR approaches toward zero. The variation of oxide layer thickness and surface roughness has a strong influence on the resulting SECR and both surface parameters show a strong coupling regarding their effects.



https://doi.org/10.1002/pssa.202100224
Hergert, Germann; Wöste, Andreas; Vogelsang, Jan; Quenzel, Thomas; Wang, Dong; Groß, Petra; Lienau, Christoph
Probing transient localized electromagnetic fields using low-energy point-projection electron microscopy. - In: ACS photonics, ISSN 2330-4022, Bd. 8 (2021), 9, S. 2573-2580

Low kinetic energy electrons are of interest for probing nanoscale dynamic processes using ultrafast electron microscopy techniques. Their low velocities reduce radiation doses and enhance the interaction with confined electromagnetic fields and, thus, may enable ultrafast spectroscopy of single nanostructures. Recent improvements in the spatial and temporal resolution of ultrafast, low-energy electron microscopy have been achieved by combining nanotip photoemitters and point-projection imaging schemes. Here, we use such an ultrafast point-projection electron microscope (UPEM) to analyze the interaction of low-energy electrons with transient electric fields created by photoemission from a nanogap antenna. By analyzing their kinetic energy distribution, we separate angular deflection due to radial field components from electron energy gain and loss due to their axial acceleration. Our measurements open up a route toward the spatial and temporal characterization of vectorial near-fields by low-energy electron streaking spectroscopy.



https://doi.org/10.1021/acsphotonics.1c00775