Veröffentlichungslisten der Fachgebiete finden Sie auf deren Seiten.

Anzahl der Treffer: 2312
Erstellt: Wed, 17 Jul 2024 23:07:53 +0200 in 0.0908 sec


Zhang, Xiao-Hao; Zhang, Xiang-Jun; Liu, Yong-He; Schäfer, Jürgen A.; Wen, Shi-Zhu
Impact of confined liquid thin film upon bioadhesive force between insect pads and smooth solid surface. - In: Wu li xue bao, ISSN 0372-736X, Bd. 56 (2008), 8, S. 4722-4727
Text in chines. Schrift, Zsfassung S. 4727 in engl. Sprache

Schley, Pascal; Napierala, Christian; Goldhahn, Rüdiger; Gobsch, Gerhard; Schörmann, Jörg; As, Donat J.; Lischka, Klaus; Feneberg, Martin; Thonke, Klaus; Fuchs, Frank; Bechstedt, Friedhelm
Band gap and effective electron mass of cubic InN. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 6, S. 2342-2344

http://dx.doi.org/10.1002/pssc.200778482
Fröber, Ulrike; Stubenrauch, Mike; Voges, Danja; Müller, René; Witte, Hartmut; Hoffmann, Martin
Biomikrosysteme zur Kultivierung von Indikatororganismen für Umwelt-Monitoring, Gefahrstoffdetektion und Zytodiagnostik. - In: 4. Workshop "Chemische und biologische Mikrolabortechnik", (2008), insges. 2 S.

Lorenz, Pierre; Lebedev, Vadim; Niebelschütz, Florentina; Hauguth, Sindy; Ambacher, Oliver; Schäfer, Jürgen A.; Krischok, Stefan
Characterization of GaN-based lateral polarity heterostructures. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 6, S. 1965-1967

http://dx.doi.org/10.1002/pssc.200778550
Tonisch, Katja; Buchheim, Carsten; Niebelschütz, Florentina; Donahue, Mary; Goldhahn, Rüdiger; Cimalla, Volker; Ambacher, Oliver
Piezoelectric actuation of all-nitride MEMS. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 6, S. 1910-1913

http://dx.doi.org/10.1002/pssc.200778423
Beenken, Wichard J. D.; Sun, Mengtao; Zhao, Guang-Jiu; Pullerits, Tõnu
Excited state properties of neutral and charged ter-fluorene with and without a keto-defect. - In: Physica status solidi, ISSN 1521-3951, Bd. 245 (2008), 5, S. 849-853

Stimulated by the recent experimental report of optical properties of charged oligofluorenes [S. Fratiloiu et al., J. Phys. Chem. B 110, 5984-5993 (2006)], we have used time-dependent density functional theory (TD-DFT) to study the electronic structure of neutral and charged ter-fluorene with and without keto-defect. We have characterized the excited states by site- and space-based representations of the density matrix. For the defectless neutral species we found typical excitons, while the first excited states of the corresponding charged species represent long-range oscillations of the electron or hole along the whole oligomer. For the neutral ketonized ter-fluorene we found trapping of the excited electron. Similarly, the unpaired electron of the anion ground state is trapped. The excited state properties of the cation, however, are insensitive to the keto-defect.



http://dx.doi.org/10.1002/pssb.200743442
Voigt, Stefan; Zhokhavets, Uladzimir; Ibrahim, Maher al-; Hoppe, Harald; Ambacher, Oliver; Gobsch, Gerhard
Dynamical optical investigation of polymer/fullerene composite solar cells. - In: Physica status solidi, ISSN 1521-3951, Bd. 245 (2008), 4, S. 714-719

http://dx.doi.org/10.1002/pssb.200743382
Schley, Pascal; Goldhahn, Rüdiger; Napierala, Christian; Gobsch, Gerhard; Schörmann, Jörg; As, Donat J.; Lischka, Klaus; Feneberg, Martin; Thonke, Klaus
Dielectric function of cubic InN from the mid-infrared to the visible spectral range. - In: Semiconductor science and technology, ISSN 1361-6641, Bd. 23 (2008), 5, S. 055001, insges. 6 S.

http://dx.doi.org/10.1088/0268-1242/23/5/055001
Rakel, Munise; Cobet, Christoph; Esser, Norbert; Fuchs, Frank; Bechstedt, Friedhelm; Goldhahn, Rüdiger; Schmidt, Wolf Gero; Schaff, William
GaN and InN conduction-band states studied by ellipsometry. - In: Physical review, ISSN 1550-235X, Bd. 77 (2008), 11, S. 115120, insges. 8 S.

http://dx.doi.org/10.1103/PhysRevB.77.115120
Lebedev, Vadim; Wang, Chunyu; Hauguth, Sindy; Polyakov, Vladimir; Schwierz, Frank; Cimalla, Volker; Kups, Thomas; Morales Sánchez, Francisco Miguel; Lozano, Juan Gabriel; González, David; Himmerlich, Marcel; Schäfer, Jürgen A.; Krischok, Stefan; Ambacher, Oliver
Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 2, S. 495-498

https://doi.org/10.1002/pssc.200777455