Morales Sánchez, Francisco Miguel;
Lozano, Juan Gabriel; García, Rafael; Lebedev, Vadim; Wang, Chunyu; Cimalla, Volker; Ambacher, Oliver; González, David
Structure of cubic polytype indium nitride layers on top of modified sapphire substrates. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 2, S. 514-517
https://doi.org/10.1002/pssc.200777472
Structure of cubic polytype indium nitride layers on top of modified sapphire substrates. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 2, S. 514-517
The occurrence of cubic indium nitride thin layers grown by molecular beam epitaxy on top of c-plane sapphire substrates modified by an intermediate layer of cubic indium oxide is reported. An orientation relationship between the (0001) plane of Al2O3 and both (001) surfaces of body-centered cubic In2O3 and zinc-blende InN is demonstrated by means of electron and X-ray diffraction and by transmission electron microscopy. We propose that the demonstrated approach is able to stabilize the non equilibrium phase of InN (i. e., the cubic polytype) due to a low lattice mismatch together with a four fold surface atomic arrangement of the indium oxide-indium nitride interface.
https://doi.org/10.1002/pssc.200777472
Cimalla, Irina Nicoleta; Gebinoga, Michael; Klett, Maren-Jördis; Lübbers, Benedikt; Lebedev, Vadim; Tonisch, Katja; Cimalla, Volker; Ambacher, Oliver; Schober, Andreas
Bioreactor with integrated nanosensor for the recording of extracellular potential of nerve cells: response to inhibitors record with AlGaN/GaN field - effect transistor. - In: Life sciences, medicine, and bio materials, ISBN 978-1-420-08504-4, (2008), S. 566-568
Bioreactor with integrated nanosensor for the recording of extracellular potential of nerve cells: response to inhibitors record with AlGaN/GaN field - effect transistor. - In: Life sciences, medicine, and bio materials, ISBN 978-1-420-08504-4, (2008), S. 566-568
Hotovy, Ivan; Predanocy, Martin; Hotovy, Juraj; Kups, Thomas; Spieß, Lothar; Wang, Chunyu; Rehacek, Vlastimil
Growth and characterization of indium oxide films for ozone detection. - In: Prospects in mechanical engineering, (2008), insges. 11 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=18741
Growth and characterization of indium oxide films for ozone detection. - In: Prospects in mechanical engineering, (2008), insges. 11 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=18741
Brückner, Klemens; Niebelschütz, Florentina; Tonisch, Katja; Michael, Steffen; Dadgar, Armin; Krost, Alois; Cimalla, Volker; Ambacher, Oliver; Stephan, Ralf; Hein, Matthias
Multimode frequency response of piezoelectric AlGaN/GaN micro-electromechanical RF resonators. - In: Technical digest, (2008), S. 165-168
Multimode frequency response of piezoelectric AlGaN/GaN micro-electromechanical RF resonators. - In: Technical digest, (2008), S. 165-168
Morales, Francisco M.; Lozano, Juan Gabriel; García, Rafael; Lebedev, Vadim; Hauguth-Frank, Sindy; Cimalla, Volker; Ambacher, Oliver; González, David
Study of microstructure and strain relaxation on thin InXGa1-xN epilayers with medium and high In contents. - In: Materials science, ISBN 978-3-540-85225-4, (2008), S. 77-78
Study of microstructure and strain relaxation on thin InXGa1-xN epilayers with medium and high In contents. - In: Materials science, ISBN 978-3-540-85225-4, (2008), S. 77-78
Ambacher, Oliver; Cimalla, Volker
Polarization induced effects in GaN-based heterostructures and novel sensors. - In: Polarization effects in semiconductors, (2008), S. 27-109
Polarization induced effects in GaN-based heterostructures and novel sensors. - In: Polarization effects in semiconductors, (2008), S. 27-109
Kups, Thomas; Voelskow, Matthias; Skorupa, Wolfgang; Soueidan, M.; Ferro, G.; Pezoldt, Jörg
Lattice location determination of Ge in SiC by ALCHEMI. - In: Microscopy of semiconducting materials 2007, (2008), S. 353-358
Lattice location determination of Ge in SiC by ALCHEMI. - In: Microscopy of semiconducting materials 2007, (2008), S. 353-358
Niebelschütz, Florentina; Pezoldt, Jörg; Stauden, Thomas; Cimalla, Volker; Tonisch, Katja; Brückner, Klemens; Hein, Matthias; Ambacher, Oliver; Schober, Andreas
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication. - In: Conference on Optoelectronic and Microelectronic Materials and Devices, 2008, ISBN 978-1-4244-2716-1, (2008), S. 26-29
http://dx.doi.org/10.1109/COMMAD.2008.4802084
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication. - In: Conference on Optoelectronic and Microelectronic Materials and Devices, 2008, ISBN 978-1-4244-2716-1, (2008), S. 26-29
http://dx.doi.org/10.1109/COMMAD.2008.4802084
Huran, Jozef; Kobzev, A. P.; Balalykin, N. I.; Pezoldt, Jörg
Hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition. - In: International Conference on Advanced Semiconductor Devices and Microsystems, 2008, ISBN 978-1-4244-2326-2, (2008), S. 127-130
http://dx.doi.org/10.1109/ASDAM.2008.4743297
Hydrogenated amorphous carbon films prepared by plasma-enhanced chemical vapor deposition. - In: International Conference on Advanced Semiconductor Devices and Microsystems, 2008, ISBN 978-1-4244-2326-2, (2008), S. 127-130
http://dx.doi.org/10.1109/ASDAM.2008.4743297
Bohacek, P.; Huran, Jozef; Kobzev, A. P.; Balalykin, N. I.; Pezoldt, Jörg
PECVD silicon carbon nitrid thin films: properties. - In: International Conference on Advanced Semiconductor Devices and Microsystems, 2008, ISBN 978-1-4244-2326-2, (2008), S. 291-294
http://dx.doi.org/10.1109/ASDAM.2008.4743340
PECVD silicon carbon nitrid thin films: properties. - In: International Conference on Advanced Semiconductor Devices and Microsystems, 2008, ISBN 978-1-4244-2326-2, (2008), S. 291-294
http://dx.doi.org/10.1109/ASDAM.2008.4743340