Nanoelectromechanical devices for sensing applications. - In: Sensors and actuators, ISSN 0925-4005, Bd. 126 (2007), 1, S. 24-34
http://dx.doi.org/10.1016/j.snb.2006.10.049
Surface composition and electronic properties of indium tin oxide and oxynitride films. - In: Surface science, ISSN 1879-2758, Bd. 601 (2007), 18, S. 4082-4086
http://dx.doi.org/10.1016/j.susc.2007.04.061
FTIR ellipsometry analysis of the internal stress in SiC/Si MEMS. - In: Silicon carbide and related materials 2006, (2007), S. 363-366
Morphology and stress control in UHVCVD of 3C-SiC(100) on Si. - In: Silicon carbide and related materials 2006, (2007), S. 203-206
Using defined structures on very thin foils for characterizing AFM tips. - In: Ultramicroscopy, ISSN 1879-2723, Bd. 107 (2007), 10/11, S. 1086-1090
http://dx.doi.org/10.1016/j.ultramic.2007.05.004
Analysis of nanocrystalline films on rough substrates. - In: Ultramicroscopy, ISSN 1879-2723, Bd. 107 (2007), 10/11, S. 989-994
http://dx.doi.org/10.1016/j.ultramic.2007.02.046
Modelling of EM glass convection with temperature-dependent properties of the melt. - In: Induction, dielectric, conduction and electromagnetic processing, (2007), S. 25-32
An application of external magnetic field to intensify the stirring process of oxide melts is a well-known industrial method. In that case melt flows not only due to the thermal convection caused by heat conduction and Joule heat production but also due to a contribution of Lorentz force. In our case the character of the opaque (reduced transparency till 35 % for IR radiation of 1 mm layer) glass melt flow with temperature-dependent physical properties has been investigated. The main idea of the present work is to prove numerically (experimental evidence by discrete measurements of temperature has been already given in [1] and [2]) that the application of the Lorentz force is able to increase the homogeneity of melt. Homogeneity of temperature is one of the pre-requsites for the high quality of glass. Our simulations show complete temperature distribution in 3D geometry of the melt, which is compared with experimental measurements obtained previously. Qualitative agreement has ben obtained for two Joule heat production rates known from the experiment.
Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers. - In: Physica status solidi, ISSN 1610-1642, Bd. 4 (2007), 4, S. 1454-1457
http://dx.doi.org/10.1002/pssc.200674114
High efficient terahertz emission from InN surfaces. - In: Physica status solidi, ISSN 1521-3951, Bd. 244 (2007), 6, S. 1829-1833
http://dx.doi.org/10.1002/pssb.200674893
Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition. - In: Thin solid films, ISSN 1879-2731, Bd. 515 (2007), 16, S. 6611-6614
http://dx.doi.org/10.1016/j.tsf.2006.11.079