Planar plano-convex microlens in silica using ICP-CVD and DRIE. - In: Optical systems design 2012, 2012, 85500T, insges. 7 S.
A microlens suitable for integration with photonic elements on the same substrate is presented. It is fabricated utilizing planar standard technologies such as UV lithography, ICO-CVD and Deep Reactive Ion Etching. For reaching an optical 3D functionality with 2D structuring methods a variation of the refractive index during the layer desposition process in the vertical direction is used. For the horizontal direction, parallel to the substrate, the shape of etched side walls determines the focus. This procedure allows the independent control of light propagation in two perpendicular directions with planar technologies. To demonstrate the potential of the technology, optical elements for the collimation of fiber-beased light sources are presented.
Non-destructive, large-scale imaging of anti-phase disorder in GaP epilayers on Si(001) using low-energy electron microscopy. - In: ECS transactions, ISSN 1938-6737, Bd. 45 (2012), 4, S. 231-239
Anlässlich: 221st ECS Meeting, Seattle, Washington, USA, 6. - 10. May, 2012
http://dx.doi.org/10.1149/1.3700472
Irradiance-dependent current-limiting behavior of multijunction solar cells. - In: 38th IEEE Photovoltaic Specialists Conference (PVSC), 2012, (2012), S. 001246-001249
http://dx.doi.org/10.1109/PVSC.2012.6317828
Nanoporous alumina growth in a magnetic field. - In: ECS transactions, ISSN 1938-6737, Bd. 50 (2012), 10, S. 141-146
http://dx.doi.org/10.1149/05010.0141ecst
Ta and Nb electrodeposition from ionic liquids. - In: ECS transactions, ISSN 1938-6737, Bd. 50 (2012), 11, S. 229-237
http://dx.doi.org/10.1149/05011.0229ecst
Dimensionierung und Technologiekonzept für eine neuartige Mikropumpe ohne bewegliche mechanische Bauteile. - In: Mikro-Nano-Integration, (2012), 10, insges. 6 S.
Silicium-Metall Nanostrukturen mit ultrahoher Absorption im infraroten Strahlungsbereich. - In: Mikro-Nano-Integration, (2012), 7, insges. 6 S.
Device concepts using two-dimensional electronic materials: graphene, MoS2, etc.. - In: IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2012, ISBN 978-1-4673-2472-4, (2012), insges. 4 S.
http://dx.doi.org/10.1109/ICSICT.2012.6467941
A novel contactless flow rate measurement device for poorly conducting fluids using Lorentz force velocimetry. - In: THMT 12, ISBN 978-1-56700-302-4, (2012), insges. 5 S.
MOVPE preparation of double-layer stepped silicon(100) for III-V-on-silicon solar cells. - In: Proceedings, (2012), S. 67-69