Zeitschriftenaufsätze und Buchbeiträge

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Wang, Chunyu; Dai, Ye; Pezoldt, Jörg; Lu, Bo; Kups, Thomas; Cimalla, Volker; Ambacher, Oliver
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide. - In: Crystal growth & design, ISSN 1528-7505, Bd. 8 (2008), 4, S. 1257-1260

http://dx.doi.org/10.1021/cg700910n
Nader, Richard; Kazan, Michel; Moussaed, Elie; Stauden, Thomas; Niebelschütz, Merten; Masri, Pierre; Pezoldt, Jörg
Surface morphology of Ge-modified 3C-SiC/Si films. - In: Surface and interface analysis, ISSN 1096-9918, Bd. 40 (2008), 9, S. 1310-1317

http://dx.doi.org/10.1002/sia.2895
Voelskow, Matthias; Yankov, Rossen; Skorupa, Wolfgang; Pezoldt, Jörg; Kups, Thomas
Buried melting in germanium implanted silicon by millisecond flash lamp annealing. - In: Applied physics letters, ISSN 1077-3118, Bd. 93 (2008), 15, S. 151903, insges. 3 S.

http://dx.doi.org/10.1063/1.2993332
Kharlamov, Vladimir S.; Trushin, Yuri V.; Zhurkin, E. E.; Lubov, Maxim N.; Pezoldt, Jörg
Study of Si and C adatoms and SiC clusters on the silicon surface by the molecular dynamics method. - In: Technical physics, ISSN 1090-6525, Bd. 53 (2008), 11, S. 1490-1503

http://dx.doi.org/10.1134/S1063784208110157
Brückner, Klemens; Niebelschütz, Florentina; Tonisch, Katja; Michael, Steffen; Dadgar, Armin; Krost, Alois; Cimalla, Volker; Ambacher, Oliver; Stephan, Ralf; Hein, Matthias
Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators. - In: Applied physics letters, ISSN 1077-3118, Bd. 93 (2008), 17, S. 173504, insges. 3 S.

http://dx.doi.org/10.1063/1.3002296
Cepite, Daiga; Jakovics, Andris; Halbedel, Bernd
Modelling the temperature homogeneity of the glass melt obtained by EM action. - In: Przeglad elektrotechniczny, ISSN 0033-2097, Bd. 84 (2008), 11, S. 165-169

Mathematical model of semi-transparent melt flow, which is caused by thermal and EM convection, has been developed. Impact of thermal boundary conditions and absorption coefficient on the temperature distribution of the melt has been analysed numerically. It has been shown that convective and radiative heat transfer influence meltâs temperature distribution significantly and can both: increase or decrease temperature homogeneity of the melt.



Gutt, Richard; Lorenz, Pierre; Tonisch, Katja; Himmerlich, Marcel; Schäfer, Jürgen A.; Krischok, Stefan
Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBE. - In: Physica status solidi, ISSN 1862-6270, Bd. 2 (2008), 5, S. 212-214

http://dx.doi.org/10.1002/pssr.200802146
Tonisch, Katja; Buchheim, Carsten; Niebelschütz, Florentina; Schober, Andreas; Gobsch, Gerhard; Cimalla, Volker; Ambacher, Oliver; Goldhahn, Rüdiger
Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures. - In: Journal of applied physics, ISSN 1089-7550, Bd. 104 (2008), 8, 084516, insges. 8 S.

https://doi.org/10.1063/1.3005885
Nader, Richard; Moussaed, Elie; Kazan, Michel; Pezoldt, Jörg; Masri, Pierre
SiC polytypes process affected by Ge predeposition on Si(111) substrates. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 44 (2008), 2, S. 191-196

http://dx.doi.org/10.1016/j.spmi.2008.06.001