Huran, Jozef; Hotovy, Ivan; Pezoldt, Jörg; Balalykin, N. I.; Kobzev, A. P.
Effect of deposition temperature on the properties of amorphous silicon carbide thin films. - In: Thin solid films, ISSN 1879-2731, Bd. 515 (2006), 2, S. 651-653
http://dx.doi.org/10.1016/j.tsf.2005.12.231
Effect of deposition temperature on the properties of amorphous silicon carbide thin films. - In: Thin solid films, ISSN 1879-2731, Bd. 515 (2006), 2, S. 651-653
http://dx.doi.org/10.1016/j.tsf.2005.12.231
Zgheib, Charbel; Nassar, E.; Hamad, M.; Nader, Richard; Masri, Pierre; Pezoldt, Jörg; Ferro, Gabriel
5[mu]m thick 3C-SiC layers grown on Ge-modified Si(100) substrates. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 638-643
http://dx.doi.org/10.1016/j.spmi.2006.06.005
5[mu]m thick 3C-SiC layers grown on Ge-modified Si(100) substrates. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 638-643
http://dx.doi.org/10.1016/j.spmi.2006.06.005
Pezoldt, Jörg; Zgheib, Charbel; Lebedev, Vadim; Masri, Pierre; Ambacher, Oliver
Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 612-618
http://dx.doi.org/10.1016/j.spmi.2006.07.030
Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 612-618
http://dx.doi.org/10.1016/j.spmi.2006.07.030
Pezoldt, Jörg; Trushin, Yuri V.; Kharlamov, Vladimir S.; Schmidt, Alexander A.; Cimalla, Volker; Ambacher, Oliver
Carbon surface diffusion and SiC nanocluster self-ordering. - In: Nuclear instruments & methods in physics research, Bd. 253 (2006), 1/2, S. 241-245
http://dx.doi.org/10.1016/j.nimb.2006.10.058
Carbon surface diffusion and SiC nanocluster self-ordering. - In: Nuclear instruments & methods in physics research, Bd. 253 (2006), 1/2, S. 241-245
http://dx.doi.org/10.1016/j.nimb.2006.10.058
Hermann, Martin; Furtmayr, Florian; Morales Sánchez, Francisco Miguel; Ambacher, Oliver; Stutzmann, Martin; Eickhoff, Martin
Impact of silicon incorporation on the formation of structural defects in AlN. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 11, 113531, insges. 9 S.
https://doi.org/10.1063/1.2363239
Impact of silicon incorporation on the formation of structural defects in AlN. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 11, 113531, insges. 9 S.
https://doi.org/10.1063/1.2363239
Lebedev, Vadim; Morales, Francisco M.; Cimalla, Volker; Lozano, Juan Gabriel; Gonzales, D.; Himmerlich, Marcel; Krischok, Stefan; Schäfer, Jürgen A.; Ambacher, Oliver
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 289-294
http://dx.doi.org/10.1016/j.spmi.2006.07.006
Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 40 (2006), 4/6, S. 289-294
http://dx.doi.org/10.1016/j.spmi.2006.07.006
Tonisch, Katja; Cimalla, Volker; Förster, Christian; Romanus, Henry; Ambacher, Oliver; Dontsov, Denis
Piezoelectric properties of polycrystalline AlN thin films for MEMS application. - In: Sensors and actuators. Physical. - Amsterdam [u.a.] : Elsevier Science, 1990- , ISSN: 1873-3069 , ZDB-ID: 1500729-7, ISSN 1873-3069, Bd. 132 (2006), 2, S. 658-663
http://dx.doi.org/10.1016/j.sna.2006.03.001
Piezoelectric properties of polycrystalline AlN thin films for MEMS application. - In: Sensors and actuators. Physical. - Amsterdam [u.a.] : Elsevier Science, 1990- , ISSN: 1873-3069 , ZDB-ID: 1500729-7, ISSN 1873-3069, Bd. 132 (2006), 2, S. 658-663
http://dx.doi.org/10.1016/j.sna.2006.03.001
Wang, Chunyu; Cimalla, Volker; Ambacher, Oliver
Tuning of electrical properties of In x O y thin films grown by MOCVD for different applications. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 945-946
http://dx.doi.org/10.1002/mawe.200600079
Tuning of electrical properties of In x O y thin films grown by MOCVD for different applications. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 945-946
http://dx.doi.org/10.1002/mawe.200600079
Niebelschütz, Merten; Ecke, Gernot; Cimalla, Volker; Tonisch, Katja; Ambacher, Oliver
Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 937-940
http://dx.doi.org/10.1002/mawe.200600083
Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 937-940
http://dx.doi.org/10.1002/mawe.200600083
Cimalla, Volker; Lebedev, Vadim; Morales, Francisco M.; Niebelschütz, Merten; Ecke, Gernot; Goldhahn, Rüdiger; Ambacher, Oliver
Origin of n-type conductivity in nominally undoped InN. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 924-928
http://dx.doi.org/10.1002/mawe.200600082
Origin of n-type conductivity in nominally undoped InN. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 924-928
http://dx.doi.org/10.1002/mawe.200600082