Ali, Majdeddin; Ecke, Gernot; Cimalla, Volker; Stauden, Thomas; Tilak, Vinayak; Sandvik, Peter; Ambacher, Oliver
SiC-based FET for NOx gas sensing applications using InVOx metal oxides as a gate material. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 5 S.
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SiC-based FET for NOx gas sensing applications using InVOx metal oxides as a gate material. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 5 S.
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Lübbers, Benedikt; Kittler, Gabriel; Cimalla, Volker; Gebinoga, Michael; Buchheim, Carsten; Wegener, Dennis; Schober, Andreas; Ambacher, Oliver
Setup for colorimetric measurements of aqueous micro- and nanoliter droplets. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 4 S.
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Setup for colorimetric measurements of aqueous micro- and nanoliter droplets. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 4 S.
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Kittler, Gabriel; Spitznas, Armin; Lübbers, Benedikt; Lebedev, Vadim; Wegener, Dennis; Schober, Andreas; Gebinoga, Michael; Schwierz, Frank; Polyakov, Vladimir M.; Weise, Frank; Ambacher, Oliver
AlGaN/GaN-sensors for monitoring of enzyme activity by pH-measurements. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 3 S.
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AlGaN/GaN-sensors for monitoring of enzyme activity by pH-measurements. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 3 S.
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Ecke, Gernot; Baumann, Tim; Ambacher, Oliver
Composition measurements of group-III nitride ternary and quaternary compound nanostructures by AES. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 4 S.
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Composition measurements of group-III nitride ternary and quaternary compound nanostructures by AES. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 4 S.
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Niebelschütz, Merten; Ecke, Gernot; Cimalla, Volker; Tonisch, Katja; Ambacher, Oliver
Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 2 S.
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Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 2 S.
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Cimalla, Irina; Will, Florentina; Tonisch, Katja; Lebedev, Vadim; Niebelschütz, Merten; Himmerlich, Marcel; Krischok, Stefan; Cimalla, Volker; Kittler, Gabriel; Kremin, Christoph
Impact of device processing on the surface properties and the biocompatibility of AlGaN/GaN HEMT sensors. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 2 S.
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Impact of device processing on the surface properties and the biocompatibility of AlGaN/GaN HEMT sensors. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 2 S.
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Cimalla, Volker; Lebedev, Vadim; Morales, Francisco M.; Niebelschütz, Merten; Ecke, Gernot; Goldhahn, Rüdiger; Ambacher, Oliver
Origin of n-type conductivity in nominally undoped InN. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 2 S.
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Origin of n-type conductivity in nominally undoped InN. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 2 S.
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Kulikov, Dimitrii V.; Schmidt, Alexander A.; Korolev, Sergey A.; Morales, Francisco M.; Stauden, Thomas; Pezoldt, Jörg; Trushin, Yuri V.
Simulation of quality of SiC/Si interface during MBE deposition of C on Si. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 9 S.
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Simulation of quality of SiC/Si interface during MBE deposition of C on Si. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 9 S.
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Wang, Chunyu; Cimalla, Volker; Ambacher, Oliver
Tuning of electrical properties of InxOy thin films grown by MOCVD for different applications. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 2 S.
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Tuning of electrical properties of InxOy thin films grown by MOCVD for different applications. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 2 S.
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Sandvik, Peter; Ali, Majeddin; Tilak, Vinayak; Matocha, Kevin; Stauden, Thomas; Tucker, Jesse; Deluca, John; Ambacher, Oliver
SiC-based MOSFETS for harsh environment emissions sensors. - In: Silicon carbide and related materials - 2005, (2006), S. 1457-1460
SiC-based MOSFETS for harsh environment emissions sensors. - In: Silicon carbide and related materials - 2005, (2006), S. 1457-1460