Cimalla, Irina Nicoleta; Will, Florentina; Tonisch, Katja; Niebelschütz, Merten; Cimalla, Volker; Lebedev, Vadim; Kittler, Gabriel; Himmerlich, Marcel; Krischok, Stefan; Schäfer, Jürgen A.; Gebinoga, Michael; Schober, Andreas; Friedrich, Thomas; Ambacher, Oliver
Einfluss von Prozessen der Bauelementtechnologie auf die Oberflächeneigenschaften und die Biokompatibilität von Gruppe III-Nitrid-basierenden Sensoren :
Impact of device technology processes on the surface properties and biocompatibility of group III nitride based sensors. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 919-923
http://dx.doi.org/10.1002/mawe.200600078
Einfluss von Prozessen der Bauelementtechnologie auf die Oberflächeneigenschaften und die Biokompatibilität von Gruppe III-Nitrid-basierenden Sensoren :
Impact of device technology processes on the surface properties and biocompatibility of group III nitride based sensors. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 919-923
http://dx.doi.org/10.1002/mawe.200600078
Pezoldt, Jörg; Kups, Thomas; Weih, Petia; Stauden, Thomas; Ambacher, Oliver
Atomic layer epitaxy of (Si1-xC1-y)Gex+y layers on 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 1559-1562
Atomic layer epitaxy of (Si1-xC1-y)Gex+y layers on 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 1559-1562
Förster, Christian; Cimalla, Volker; Stubenrauch, Mike; Rockstuhl, Carsten; Brueckner, Klemens; Hein, Matthias; Pezoldt, Jörg; Ambacher, Oliver
Micromachining of novel SiC on Si structures for device and sensor applications. - In: Silicon carbide and related materials - 2005, (2006), S. 1111-1114
Micromachining of novel SiC on Si structures for device and sensor applications. - In: Silicon carbide and related materials - 2005, (2006), S. 1111-1114
Kups, Thomas; Weih, Petia; Voelskow, Matthias; Skorupa, Wolfgang; Pezoldt, Jörg
High dose high temperature ion implantation of Ge into 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 851-854
High dose high temperature ion implantation of Ge into 4H-SiC. - In: Silicon carbide and related materials - 2005, (2006), S. 851-854
Förster, Christian; Kosiba, Rastislav; Ecke, Gernot; Cimalla, Volker; Ambacher, Oliver; Pezoldt, Jörg
Low energy ion modification of 3C-SiC surfaces. - In: Silicon carbide and related materials - 2005, (2006), S. 685-688
Low energy ion modification of 3C-SiC surfaces. - In: Silicon carbide and related materials - 2005, (2006), S. 685-688
Schmidt, Alexander A.; Trushin, Yuri V.; Safonov, K. L.; Kharlamov, Vladimir S.; Kulikov, Dmitri V.; Ambacher, Oliver; Pezoldt, Jörg
Multi-scale simulation of MBE-grown SiC/Si nanostructures. - In: Silicon carbide and related materials - 2005, (2006), S. 315-318
Multi-scale simulation of MBE-grown SiC/Si nanostructures. - In: Silicon carbide and related materials - 2005, (2006), S. 315-318
Pezoldt, Jörg; Morales, Francisco M.; Stauden, Thomas; Förster, Christian; Polychroniadis, E. K.; Stoemenos, J.; Panknin, D.; Skorupa, Wolfgang
Growth acceleration in FLASiC assisted short time liquid phase epitaxy by melt modification. - In: Silicon carbide and related materials - 2005, (2006), S. 295-298
Growth acceleration in FLASiC assisted short time liquid phase epitaxy by melt modification. - In: Silicon carbide and related materials - 2005, (2006), S. 295-298
Ferro, Gabriel; Soueidan, Maher; Jacquier, C.; Godignon, P.; Stauden, Thomas; Pezoldt, Jörg; Lazar, M.; Montserrat, J.; Monteil, Y.
Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts. - In: Silicon carbide and related materials - 2005, (2006), S. 275-278
Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts. - In: Silicon carbide and related materials - 2005, (2006), S. 275-278
Kulikov, Dmitrii V.; Schmidt, Alexander A.; Korolev, Sergey A.; Morales, Francisco M.; Stauden, Thomas; Trushin, Yuri V.; Pezoldt, Jörg
Simulation of quality of SiC/Si interface during MBE deposition of C on Si. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 929-932
http://dx.doi.org/10.1002/mawe.200600080
Simulation of quality of SiC/Si interface during MBE deposition of C on Si. - In: Materials science and engineering technology, ISSN 1521-4052, Bd. 37 (2006), 11, S. 929-932
http://dx.doi.org/10.1002/mawe.200600080
Lebedev, Vadim; Cimalla, Volker; Baumann, Tim; Ambacher, Oliver; Morales Sánchez, Francisco Miguel; Lozano, Juan Gabriel; González, David
Effect of dislocations on electrical and electron transport properties of InN thin films : II. density and mobility of the carriers. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 9, 094903, insges. 8 S.
https://doi.org/10.1063/1.2363234
Effect of dislocations on electrical and electron transport properties of InN thin films : II. density and mobility of the carriers. - In: Journal of applied physics, ISSN 1089-7550, Bd. 100 (2006), 9, 094903, insges. 8 S.
https://doi.org/10.1063/1.2363234