Cimalla, Volker; Kaiser, Ute; Cimalla, Irina; Ecke, Gernot; Pezoldt, Jörg; Spieß, Lothar; Ambacher, Oliver; Lu, Hai; Schaff, William
Cubic InN on r-plane sapphire. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 36 (2004), 4/6, S. 487-495
http://dx.doi.org/10.1016/j.spmi.2004.09.054
Cubic InN on r-plane sapphire. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 36 (2004), 4/6, S. 487-495
http://dx.doi.org/10.1016/j.spmi.2004.09.054
Cimalla, Volker; Schmidt, Alexander A.; Förster, Christian; Zekentes, K.; Ambacher, Oliver; Pezoldt, Jörg
Self-organized SiC nanostructures on silicon. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 36 (2004), 1/3, S. 345-351
http://dx.doi.org/10.1016/j.spmi.2004.08.001
Self-organized SiC nanostructures on silicon. - In: Superlattices and microstructures, ISSN 1096-3677, Bd. 36 (2004), 1/3, S. 345-351
http://dx.doi.org/10.1016/j.spmi.2004.08.001
Panknin, D.; Godignon, P.; Mestres, N.; Polychroniadis, E.; Stoemenos, J.; Ferro, Gabriel; Pezoldt, Jörg; Skorupa, Wolfgang
Formation of 3C-SiC films embedded in SiO2 by sacrificial oxidation. - In: Silicon carbide and related materials 2003, (2004), S. 1515-1518
Formation of 3C-SiC films embedded in SiO2 by sacrificial oxidation. - In: Silicon carbide and related materials 2003, (2004), S. 1515-1518
Förster, Christian; Cimalla, Volker; Kosiba, Rastislav; Ecke, Gernot; Weih, Petia; Ambacher, Oliver; Pezoldt, Jörg
Etching of SiC with fluorine ECR plasma. - In: Silicon carbide and related materials 2003, (2004), S. 821-824
Etching of SiC with fluorine ECR plasma. - In: Silicon carbide and related materials 2003, (2004), S. 821-824
Zgheib, Charbel; Masri, Pierre; Weih, Petia; Ambacher, Oliver; Pezoldt, Jörg
Stress control in 3C-SiC films grown on Si(111). - In: Silicon carbide and related materials 2003, (2004), S. 301-304
Stress control in 3C-SiC films grown on Si(111). - In: Silicon carbide and related materials 2003, (2004), S. 301-304
Morales, Francisco M.; Zgheib, Charbel; Molina, Sergio I.; Araújo, Daniel; García, Rafael; Fernández, C.; Sanz-Hervás, A.; Masri, Pierre; Weih, Petia; Stauden, Thomas
Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111). - In: Silicon carbide and related materials 2003, (2004), S. 297-300
Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111). - In: Silicon carbide and related materials 2003, (2004), S. 297-300
Kosiba, Rastislav; Ecke, Gernot; Cimalla, Volker; Spieß, Lothar; Krischok, Stefan; Schäfer, Jürgen A.; Ambacher, Oliver; Schaff, William J.
Sputter depth profiling of InN layers. - In: Nuclear instruments & methods in physics research, Bd. 215 (2004), 3/4, S. 486-494
http://dx.doi.org/10.1016/j.nimb.2003.08.039
Sputter depth profiling of InN layers. - In: Nuclear instruments & methods in physics research, Bd. 215 (2004), 3/4, S. 486-494
http://dx.doi.org/10.1016/j.nimb.2003.08.039
Weih, Petia; Cimalla, Volker; Stauden, Thomas; Kosiba, Rastislav; Spieß, Lothar; Romanus, Henry; Gubisch, Maik; Bock, W.; Freitag, Th.; Fricke, P.
Structure and composition of 3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE. - In: Silicon carbide and related materials 2003, (2004), S. 293-296
Structure and composition of 3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE. - In: Silicon carbide and related materials 2003, (2004), S. 293-296
Skorupa, Wolfgang; Panknin, D.; Anwand, W.; Voelskow, Matthias; Ferro, Gabriel; Monteil, Y.; Leycuras, A.; Pezoldt, Jörg; McMahon, R.; Smith, M.
Flash lamp supported deposition of 3C-SiC (FLASiC) - a promising technique to produce high quality cubic SiC layers. - In: Silicon carbide and related materials 2003, (2004), S. 175-180
Flash lamp supported deposition of 3C-SiC (FLASiC) - a promising technique to produce high quality cubic SiC layers. - In: Silicon carbide and related materials 2003, (2004), S. 175-180
Kosiba, Rastislav; Liday, Jozef; Ecke, Gernot; Ambacher, Oliver; Breza, Juraj
Auger electron spectroscopy of silicon carbide. - In: Journal of electrical engineering, ISSN 1335-3632, Bd. 55 (2004), 9/10, S. 269-272
Auger electron spectroscopy of silicon carbide. - In: Journal of electrical engineering, ISSN 1335-3632, Bd. 55 (2004), 9/10, S. 269-272