Cros, Ana; Joshi, N. V.; Smith, T.; Cantarero, A.; Martínez-Criado, Gema; Ambacher, Oliver; Stutzmann, Martin
Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 7, S. 2699-2702
http://dx.doi.org/10.1002/pssc.200303533
Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 7, S. 2699-2702
http://dx.doi.org/10.1002/pssc.200303533
Aperathitis, Elias; Bender, Marcus; Cimalla, Volker; Ecke, Gernot; Modreanu, Mircea
Properties of rf-sputtered indiumtin-oxynitride thin films. - In: Journal of applied physics, ISSN 1089-7550, Bd. 94 (2003), 2, S. 1258-1266
https://doi.org/10.1063/1.1582368
Properties of rf-sputtered indiumtin-oxynitride thin films. - In: Journal of applied physics, ISSN 1089-7550, Bd. 94 (2003), 2, S. 1258-1266
https://doi.org/10.1063/1.1582368
Cengher, Dorin; Hatzopoulos, Z.; Gallis, S.; Deligeorgis, G.; Aperathitis, E.; Androulidaki, M.; Alexe, M.; Dragoi, V.; Kyriakis-Bitzaros, E. D.; Halkias, G.
Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers. - In: Journal of crystal growth, Bd. 251 (2003), 1/4, S. 754-759
http://dx.doi.org/10.1016/S0022-0248(02)02218-2
Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers. - In: Journal of crystal growth, Bd. 251 (2003), 1/4, S. 754-759
http://dx.doi.org/10.1016/S0022-0248(02)02218-2
Katsarakis, Nikos; Bender, Marcus; Cimalla, Volker; Gagaoudakis, E.; Kiriakidis, George
Ozone sensing properties of DC-sputtered, c-axis oriented ZnO films at room temperature. - In: Sensors and actuators, ISSN 0925-4005, Bd. 96 (2003), 1/2, S. 76-81
http://dx.doi.org/10.1016/S0925-4005(03)00488-X
Ozone sensing properties of DC-sputtered, c-axis oriented ZnO films at room temperature. - In: Sensors and actuators, ISSN 0925-4005, Bd. 96 (2003), 1/2, S. 76-81
http://dx.doi.org/10.1016/S0925-4005(03)00488-X
Joshi, N. V.; Medina, H.; Cantarero, Andres; Ambacher, Oliver
Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor. - In: Journal of physics and chemistry of solids, Bd. 64 (2003), 9/10, S. 1685-1689
http://dx.doi.org/10.1016/S0022-3697(03)00070-2
Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor. - In: Journal of physics and chemistry of solids, Bd. 64 (2003), 9/10, S. 1685-1689
http://dx.doi.org/10.1016/S0022-3697(03)00070-2
Graf, T.; Gjukic, M.; Görgens, L.; Ambacher, Oliver; Brandt, M. S.; Stutzmann, Martin
Charge transfer at the Mn acceptor level in GaN. - In: Journal of superconductivity, ISSN 1572-9605, Bd. 16 (2003), 1, S. 83-86
http://dx.doi.org/10.1023/A:1023288718903
Charge transfer at the Mn acceptor level in GaN. - In: Journal of superconductivity, ISSN 1572-9605, Bd. 16 (2003), 1, S. 83-86
http://dx.doi.org/10.1023/A:1023288718903
Dimakis, E.; Georgakilas, A.; Androulidaki, M.; Tsagaraki, K.; Kittler, Gabriel; Kalaitzakis, F.; Cengher, Dorin; Bellet-Amalric, E.; Jalabert, D.; Pelekanos, Nikos T.
Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence. - In: Journal of crystal growth, Bd. 251 (2003), 1/4, S. 476-480
http://dx.doi.org/10.1016/S0022-0248(02)02275-3
Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence. - In: Journal of crystal growth, Bd. 251 (2003), 1/4, S. 476-480
http://dx.doi.org/10.1016/S0022-0248(02)02275-3
Martínez-Criado, Gema; Cros, Ana; Cantarero, A.; Joshi, N. V.; Ambacher, Oliver; Stutzmann, Martin
Study of inversion domain pyramids formed during the GaN:Mg growth. - In: Solid state electronics, Bd. 47 (2003), 3, S. 565-568
http://dx.doi.org/10.1016/S0038-1101(02)00414-8
Study of inversion domain pyramids formed during the GaN:Mg growth. - In: Solid state electronics, Bd. 47 (2003), 3, S. 565-568
http://dx.doi.org/10.1016/S0038-1101(02)00414-8
Kassamakova-Kolaklieva, L.; Kakanakov, Roumen; Cimalla, Volker; Hristeva, N.; Lepoeva, G.; Kuznetsov, N.; Zekentes, K.
Pd-based ohmic contacts to LPE 4H-SiC with improved thermal stability. - In: Silicon carbide and related materials 2002, (2003), S. 713-716
Pd-based ohmic contacts to LPE 4H-SiC with improved thermal stability. - In: Silicon carbide and related materials 2002, (2003), S. 713-716
Cimalla, Volker; Förster, Christian; Kittler, Gabriel; Cimalla, Irina Nicoleta; Kosiba, Rastislav; Ecke, Gernot; Ambacher, Oliver; Goldhahn, Rüdiger; Žochovec, Svjatoslav; Georgakilas, A.; Lu, Hai; Schaff, William
Correlation between strain, optical and electrical properties of InN grown by MBE. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 7, S. 2818-2821
http://dx.doi.org/10.1002/pssc.200303419
Correlation between strain, optical and electrical properties of InN grown by MBE. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2003), 7, S. 2818-2821
http://dx.doi.org/10.1002/pssc.200303419