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Microtribology of biological materials. - In: Tribology letters, ISSN 1573-2711, Bd. 8 (2000), 1, S. 1-7
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Microtribology of biological materials. - In: Tribology letters, ISSN 1573-2711, Bd. 8 (2000), 1, S. 1-7
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Scherge, Matthias; Gorb, Stanislav N.
Using biological principles to design MEMS. - In: Journal of micromechanics and microengineering, ISSN 1361-6439, Bd. 10 (2000), 3, S. 359-364
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Using biological principles to design MEMS. - In: Journal of micromechanics and microengineering, ISSN 1361-6439, Bd. 10 (2000), 3, S. 359-364
http://dx.doi.org/10.1088/0960-1317/10/3/309
Romanus, Henry; Cimalla, Volker; Schäfer, Jürgen A.; Spieß, Lothar; Ecke, Gernot; Pezoldt, Jörg
Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers. - In: Thin solid films, ISSN 1879-2731, Bd. 359 (2000), 2, S. 146-149
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Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers. - In: Thin solid films, ISSN 1879-2731, Bd. 359 (2000), 2, S. 146-149
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Scherge, Matthias; Ahmed, S. I.; Mollenhauer, Olaf; Spiller, Frank
Mikrotribology : detection of forces in the micronewton range. - In: Sensoren und Meßsysteme 2000, (2000), S. 279-286
Mikrotribology : detection of forces in the micronewton range. - In: Sensoren und Meßsysteme 2000, (2000), S. 279-286
Schnittler, Christoph; Kirpal, Alfred
Die Macht des Geistes ... : Universitäten in der Wissensgesellschaft. - In: Ilmenauer Uni-Nachrichten, Bd. 43 (2000), 3, S. 22-23
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Phonons in group-III nitride mixed crystals. - In: Compound semiconductors 1999, (2000), S. 499-502
Phonons in group-III nitride mixed crystals. - In: Compound semiconductors 1999, (2000), S. 499-502
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Phonons in ternary group-III nitride alloys. - In: Physical review, ISSN 1550-235X, Bd. 61 (2000), 9, S. 6091-6105
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Talalaev, V. G.; Novikov, B. V.; Verbin, S. Yu.; Novikov, A. B.; Thath, Dinh Son; Shchur, I. V.; Gobsch, Gerhard; Goldhahn, Rüdiger; Stein, Norbert; Golombek, A.
Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces. - In: Semiconductors, ISSN 1090-6479, Bd. 34 (2000), 4, S. 453-461
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Recombination emission from InAs quantum dots grown on vicinal GaAs surfaces. - In: Semiconductors, ISSN 1090-6479, Bd. 34 (2000), 4, S. 453-461
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Goldhahn, Rüdiger; Shokhovets, Sviatoslav; Scheiner, Jörg; Gobsch, Gerhard; Cheng, T. S.; Foxon, C. Thomas; Kaiser, U.; Kipshidze, G. D.; Richter, W.
Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies. - In: Physica status solidi, ISSN 1862-6319, Bd. 177 (2000), 1, S. 107-115
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Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies. - In: Physica status solidi, ISSN 1862-6319, Bd. 177 (2000), 1, S. 107-115
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As, Donat J.; Frey, T.; Schikora, D.; Lischka, Klaus; Cimalla, Volker; Pezoldt, Jörg; Goldhahn, Rüdiger; Kaiser, S.; Gebhardt, W.
Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates. - In: Applied physics letters, ISSN 1077-3118, Bd. 76 (2000), 13, S. 1686-1688
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